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Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors
2015 Edition, Volume 36, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p±-InAs/InAsSb cap structure. The incorporation of a p±-InAsSb layer enables the use of a thicker cap with lower...

Low resistance ohmic contacts to n-InSb employing Sn-alloys
2013 Edition, June 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper discusses ohmic contact formation of Sn-based alloys on n-InSb. Most critical problem, we encountered when using a Sn/Au/Ni/Ti/Au metal stack, is an anomalous alloy extension of the ohmic metal. This was found to be resulted from...

Assembly Process and Electrical Properties of Top-Transferred Graphene on Carbon Nanotubes for Carbon-Based Three-Dimensional Interconnects
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Carbon nanomaterials, graphene and carbon nanotubes (CNTs) have emerged as the promising materials for the integration of future advance packaging technologies. The main benefits of carbon nanomaterials include excellent electrical, thermal and mechanical properties. In this work,...

Temperature-Dependent Contact Resistance to Nonvolatile Memory Materials
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Emerging nonvolatile memories store data by reversible resistive switching in phase-change materials or metal oxides. As memory cell dimensions are reduced to ~10-nm scale or below, electrical contacts can dominate the device behavior, yet are often poorly understood. Here, we study the...

Impact of Silver Surface Morphology on the Wall Plug Efficiency of Blue Vertical Light-Emitting Diodes
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Due to merits of good thermal conductivity and vertical current distribution, vertical light-emitting diodes (VLEDs) have been widely studied for many years. However, the wall plug efficiency (WPE) remains limited by the light trapping effect in GaN cavity and difficulties to achieve...

Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts
2018 Edition, Volume 65, September 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Recently, sub-10-nm-diameter InGaAs vertical nanowire (VNW) MOSFETs have been demonstrated. The key to this achievement was the use of Ni for the top ohmic contact. In this paper, we present a detailed study of the impact of Ni and Mo contacts...

Optimization of Ohmic contact fabrication technology to GaN-based heterostructures
2017 Edition, January 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A contact fabrication technology has been developed to achieve a low specific contact resistance to AlGaN/GaN heterostructures. The contact consisted of a Ti/Al/Ni/Au metal stack and was deposited by e-beam evaporation on semiconductor...

Fabrication and characterization of N-face AlGaN/GaN/AlGaN HEMTs
2005 Edition, Volume 1, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The paper reports on the characteristics of N-face AlGaN/GaN/AlGaN HEMTs. Ohmic contact optmization experiments based on the Ti/Al/Ni/Au metallization scheme commonly used for Ga-face AlGaN/GaN HEMTs were carried out and a low contact...

Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS₂ Transistors
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A scalable process that can yield low-resistance contacts to transition metal dichalcogenides is crucial for realizing a viable device technology from these materials. Here, we systematically examine the effect of high-k dielectric-mediated doping on key device...

High-frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107cm-2. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the...

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