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Fabrication of Low-Resistance Ni Ohmic Contacts on n⁺-Ge1-xSnₓ
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A highly doped n-type GeSn layer with a doping concentration of approximately 5 x 10²⁰ cm⁻³ was grown successfully by the sputtering epitaxy method. The current-voltage behavior of Ni/n-GeSn under various annealing temperatures was investigated. Both the high...

Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1− x Sn x
2018 Edition, Volume 65, November 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A highly doped n-type GeSn layer with a doping concentration of approximately $\textsf {5} \times \textsf {10}^{\textsf {20}}$ cm−3 was grown successfully by the sputtering epitaxy method. The current-voltage behavior of Ni/n-GeSn under various annealing...

Growth of direct bandgap Ge1-xSnx alloys by modified magnetron sputtering
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the growth of direct bandgap single-crystalline Ge1-xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1-xSnx thin films were deposited on Si, Ge and GaAs substrates at room temperature. They were...

Electrical Characterization of P-Ge1-xSnx/P-Ge and P-Ge1-xSnx/n-Ge Heterostructures by Numerical Simulation of Admittance Spectroscopy
2012 Edition, June 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The group IV semiconductor alloy germanium tin (Ge1-xSnx) is an attractive material for next-generation devices in nanoelectronics. The strain resulting from the lattice mismatch between an epitaxial film and the substrate material provides an efficient tool for band structure...

Band structure of strained Ge1-xSnx alloy: a full-zone 30-band k∙p model
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We extend the previous 30-band k∙p model effectively employed for relaxed Ge1-xSnx alloy to the case of strained Ge1-xSnx alloy. The strain-relevant parameters for the 30-band k∙p model are obtained by using linear interpolation between the values of single...

Optimized Ge1-xSnx/Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the design and analysis of threeterminal Ge1..xSnx/Ge multiple-quantum-well (MQW) heterojunction phototransistors (HPTs) for high-performance shortwave infrared (SWIR) photodetection. The active layer incorporates Ge1..xSnx/Ge MQW structures between...

Growth of Direct Bandgap Ge1xSnx Alloys by Modified Magnetron Sputtering
2020 Edition, Volume 56, February 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the growth of direct bandgap single-crystalline Ge1-xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1-xSnx thin films were deposited on Si, Ge, and GaAs substrates at room temperature. They were...

Optical Properties of Ge1-xSnx Epitaxial Layers with Very High Sn Contents
2012 Edition, June 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We investigated the optical properties of Ge1-xSnx layers with Sn contents more than 15%. We measured the direct gaps of Ge1-xSnx epitaxial layers with a very high Sn content over 15%, and show the Sn content dependence of the bowing parameter for...

Material Properties and Applications of Ge1-xSnx Alloys for Ge Nanoelectronics
2012 Edition, June 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Ge1-xSnx alloy provides a new aspect into the growth, strain, electronic, and energy band engineering technology. The future prospect of Ge1-xSnx application is very exciting and promising for not only electronic but also optoelectronic applications.

Design and Analysis of Ge/Ge1-xSnx/Ge Heterojunction Phototransistor for MIR Wavelength Biological Applications
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work presents the influence of lateral scaling such as emitter layer thickness and base layer thickness on the responsivity spectra and frequency response of Ge/ Ge1-xSnx /Ge p-n-p heterojunction phototransistor (HPT), a generalized detector for...

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