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Fabrication of Low-Resistance Ni Ohmic Contacts on n+-Ge1x Sn x
2018 Edition, Volume 65, November 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A highly doped n-type GeSn layer with a doping concentration of approximately $\textsf {5} \times \textsf {10}^{\textsf {20}}$ cm−3 was grown successfully by the sputtering epitaxy method. The current-voltage behavior of Ni/n-GeSn under various annealing...

Fabrication of Low-Resistance Ni Ohmic Contacts on n⁺-Ge1-xSnₓ
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A highly doped n-type GeSn layer with a doping concentration of approximately 5 x 10²⁰ cm⁻³ was grown successfully by the sputtering epitaxy method. The current-voltage behavior of Ni/n-GeSn under various annealing temperatures was investigated. Both the...

Optimized Ge1x Sn x /Ge Multiple-Quantum-Well Heterojunction Phototransistors for High-Performance SWIR Photodetection
2018 Edition, Volume 18, July 15, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the design and analysis of three-terminal Ge1-xSnx/Ge multiple-quantum-well (MQW) heterojunction phototransistors (HPTs) for high-performance short-wave infrared (SWIR) photodetection. The active layer incorporates Ge1-xSnx/Ge MQW structures between base-collector...

Ni(Ge1x − y Si x Sn y ) Ohmic Contact Formation on p-type Ge0.86Si0.07Sn0.07
2015 Edition, Volume 36, September 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A single-crystalline Ge0.86Si0.07Sn0.07 alloy was grown on double Ge1-xSnx and Ge buffers on Si (100) using magnetron sputtering. The temperature-dependent contact resistivity (ρc) of Ni/p-type Ge0.86Si0.07Sn0.07 structure was investigated in detail. Good...

Fabrication and Performance of Ti/Al/Ni/TiN Au-Free Ohmic Contacts for Undoped AlGaN/GaN HEMT
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We proposed a preparation method of a TiN capping layer compatible with the ohmic contacts process, and demonstrated the Au-free ohmic contacts of an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) with a Ti/Al/Ni/TiN metal structure. TiN...

Growth of direct bandgap Ge1-xSnx alloys by modified magnetron sputtering
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the growth of direct bandgap single-crystalline Ge1-xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1-xSnx thin films were deposited on Si, Ge and GaAs substrates at room temperature. They were characterized by...

$\hbox{Ni}(\hbox{Ge}_{1 - x}\hbox{Sn}_{x})$ Ohmic Contact Formation on N-Type $\hbox{Ge}_{1 - x}\hbox{Sn}_{x}$ Using Selenium or Sulfur Implant and Segregation
2013 Edition, Volume 60, February 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The physics of ohmic contact formation for nickel stanogermanide [ Ni(Ge1-xSnx)] on n-type germanium-tin (n-Ge1-xSnx) was investigated. Low-resistivity Ni(Ge1-xSnx) was formed on Ge1-xSnx using a 350...

Growth of Direct Bandgap Ge1−xSnx Alloys by Modified Magnetron Sputtering
2020 Edition, Volume 56, February 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the growth of direct bandgap single-crystalline Ge1-xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1-xSnx thin films were deposited on Si, Ge, and GaAs substrates at room temperature. They were characterized by...

Multi-Scale Electronic Structure Analysis of Direct-Gap Group-IV Alloys: Implications for Device Applications
2019 Edition, Volume 1949-209X, August 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a comparative theoretical analysis of the group-IV semiconductor alloys Ge1-x(C, Sn, Pb)x, and quantify the character and evolution of their electronic structure with composition. Our calculations reveal (i) dilute Ge1-xCx admits a...

Multi-Scale Electronic Structure Analysis of Direct-Gap Group-IV Alloys: Implications for Device Applications
2019 Edition, August 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a comparative theoretical analysis of the group-IV semiconductor alloys Ge1-x(C,Sn,Pb) x, and quantify the character and evolution of their electronic structure with composition. Our calculations reveal (i) dilute Ge1-xCx admits a...

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