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Etching of 200 ϋm deep GaAs via holes with near vertical wall profile using photoresist mask with inductively coupled plasma
2007 Edition, December 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Metal semiconductor field effect transistors (MESFETs) and pseudomorphic high electron mobility transistors (pHEMTs) are used in high frequency microwave applications in monolithic microwave integrated circuits (MMICs). Ground via holes with low inductance to the source...

Photoelectrochemical Etching Technology for Gallium Nitride Power and RF Devices
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than 1 μm, with high accuracy. The aspect ratio (depth/width) of a 3.3-μm-wide...

JMEMS Letters Laser-Assisted Wet Etching of Quartz Crystal Resonators
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports on the development of a laser-assisted wet etching process for quartz crystal resonators. The quartz crystals are in contact with hydrofluoric acid on the backside while the laser is irradiating the front side of the crystal. The quartz crystal has a...

Methods for RFSOI Damascene Tungsten Contact Etching
2019 Edition, May 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

GLOBALFOUNDRIES has ramped its 180nm generation RFSOI foundry technology into high volume production at multiple 200mm and 300mm fabricators. This RFSOI technology was optimized primarily for sub-6GHz RF switches, tuners, and low noise amplifiers used in cell phone front-end-modules. The...

Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Recently, uniform metal-assisted chemical etching (UMaCE) has been demonstrated as an effective wet etch method for fabrication of deep trenches and holes on silicon (Si). However, attempts to achieve higher aspect ratio by UMaCE was not successful because etching...

High Uniformity Normally-off p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A normally-off p-GaN gate AlGaN/GaN high-electron-mobility transistor with high on-state resistance (Ron) uniformity was realized using a self-terminated digital etching technique. Ron uniformity control was improved by simultaneously using an AlN etching stop...

Research on the Gas Effect of Octafluorocyclobutane Plasma Jet at Atmospheric Pressure for Silicon Etching
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The capacitively coupled radio frequency double-pipe plasma discharge jet is used for the etching process. An argon carrier gas is fed through the atmospheric-pressure plasma source; octafluorocyclobutane (C₄F₈) etch gas is injected into the plasma....

Low-damage Etching for AlGaN/GaN HEMTs Using Photo-electrochemical Reactions
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light wavelength and voltage conditions enabled PEC...

Monitoring the Etching Process of Hi-Bi Fiber through a Fiber Loop Mirror
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A method for monitoring the etching process of Hi-Bi fiber is proposed and demonstrated. The birefringence of the etching fiber is accurately calculated by tracking the shift of the interference spectrum in a high birefringence fiber loop mirror interferometer....

Polymer Optical Fiber Modification by Etching using Hansen Solubility Parameters - A Case Study of TOPAS, Zeonex and PMMA
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Solvents can be used in the fabrication process of Polymer Optical Fiber (POF) sensors, as tapering or etching agents. We present a general approach - the use of Hansen Solubility Parameters (HSPs) - for identifying usable solvents for etching and...

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