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An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance
1999 Edition, Volume 20, May 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 /spl mu/m gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum...

Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554...

Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance"
1999 Edition, Volume 20, June 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.

Depletion- and enhancement-mode modulation-doped field-effect transistors for ultrahigh-speed applications: an electrochemical fabrication technology
2000 Edition, Volume 47, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper is devoted to an electrochemical-etching-based technology for fabricating high-performance MODFETs for high-speed applications. The electrochemical etching in the gate openings is induced by the exposure of the Ni surface metal on the ohmic electrodes; it results in...

High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates
2003 Edition, Volume 24, March 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Enhancement-mode InAlAs/InGaAs/GaAs metamorphic HEMTs with a composite InGaAs channel and double-recessed 0.15-/spl mu/m gate length are presented. Epilayers with a room-temperature mobility of 10 000 cm/sup 2//V-s...

ISO/IEC 23008-3:2019 - Information technology - High efficiency coding and media delivery in heterogeneous environments - Part 3: 3D audio
February 28, 2019 - IEC - International Electrotechnical Commission

This document specifies technology that supports the efficient transmission of immersive audio signals and flexible rendering for the playback of immersive audio in a wide variety of listening scenarios. These include home theatre setups with 3D loudspeaker configurations, 22.2...

P1561/D3.0, Nov 2018 - IEEE Draft Guide for Optimizing the Performance and Life of Lead-Acid Batteries in Remote Hybrid Power Systems
2019 Edition, January 26, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This guide is applicable to lead-acid batteries 1 that are used as the energy storage component in remote hybrid power supplies. The remote hybrid application, with its dual generator option, i.e., both renewable and dispatchable generation, is advantageous in that the battery...

IEC 60904-3:2019 RLV - Photovoltaic devices - Part 3: Measurement principles for terrestrial photovoltaic (PV) solar devices with reference spectral irradiance data
February 15, 2019 - IEC - International Electrotechnical Commission

IEC 60904-3:2019 RLV contains both the official IEC International Standard and its Redline version. The Redline version is not an official document, it is available in English only and provides you with a quick and easy way to compare all the changes between the...

IEC 60904-3:2019 - Photovoltaic devices - Part 3: Measurement principles for terrestrial photovoltaic (PV) solar devices with reference spectral irradiance data
February 15, 2019 - IEC - International Electrotechnical Commission

IEC 60904-3:2019 is available as IEC 60904-3:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60904-3:2019 describes basic measurement principles for determining the...

802.3cd-2018 - IEEE Standard for Ethernet - Amendment 3: Media Access Control Parameters for 50 Gb/s and Physical Layers and Management Parameters for 50 Gb/s, 100 Gb/s, and 200 Gb/s Operation
2019 Edition, February 14, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Clause 131 through Clause 140 and Annex 135A through Annex 136D are added to IEEE Std 802.3-2018 by this amendment to specify IEEE 802.3 Media Access Control (MAC) parameters, Physical Layer specifications, and management parameters for the transfer of IEEE 802.3 format...

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