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Effect of carrier transport on modulation bandwidth of 1.3-µm InAs/GaAs self-assembled quantum-dot lasers
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We newly modeled the modulation bandwidth of 1.3-µm quantum-dot lasers and analyzed experimental results. The carrier transport through the active layers was found to affect significantly the modulation bandwidth with...

Effects of Carrier Relaxation and Homogeneous Broadening on Dynamic and Modulation Behavior of Self-Assembled Quantum-Dot Laser
2011 Edition, Volume 17, September 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The important tradeoff between frequency bandwidth and single-mode behavior of multimode self-assembled InAs-GaAs quantum-dot (QD) laser by increasing temperature or homogeneous broadening is addressed. The effects of...

Photoelectric Properties of InAs/GaAs Quantum Dot Photoconductive Antenna Wafers
2018 Edition, Volume 24, March 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, the study of the photoconductivity in self-assembled InAs/GaAs quantum dot photoconductive antenna in the wavelength region between 1140 nm and 1250 nm at temperatures ranging from 13 to 400 K is reported. These antennas are aimed to...

Carrier Relaxation and Modulation Response of 1.3- $\mu$ m InAsGaAs Quantum Dot Lasers
2009 Edition, Volume 27, December 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A self-consistent rate equation model is presented to investigate the influence of carrier relaxation on the modulation response of 1.3 mum InAs-GaAs quantum dot lasers. In this model, the carrier dynamics in...

Photoconductivity of an InAs/GaAs self-assembled quantum dot photoconductive THz antenna
2017 Edition, June 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A broadband terahertz (THz) source is desirable for applications such as imaging, spectroscopy and security. Towards this, an InAs/GaAs quantum dot (QD) based photoconductive antenna (PCA) is a promising and compact solution for THz generation. Coherent THz radiation in...

Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon
2015 Edition, Volume 21, November 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present the first reliability study of InAs/GaAs self-assembled quantum dot lasers epitaxially grown on Ge/Si substrates. Some devices maintain lasing oscillation after more than 2700 h of constant current stress at 30 °C,...

Strain Balancing of Metal-Organic Vapour Phase Epitaxy InAs/GaAs Quantum Dot Lasers
2017 Edition, Volume 23, November 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Incorporation of a GaAs0.8P0.2 layer allows strain balancing to be achieved in self-assembled InAs/GaAs quantum dots (QDs) grown by metal organic vapor phase epitaxy. Tuneable wavelength and high density are obtained through growth parameter...

Stimulated emission dynamics in self-assembled InAs/GaAs quantum dots
2000 Edition, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. Self-assembled semiconductor quantum dots have found interest as gain materials for semiconductor lasers. While time-resolved studies on quantum dots have mainly focused on the spontaneous recombination...

Spatial Optimization of Modulation Doping in P-I-P QDIPs: Towards Achieving Higher Operating Temperature
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report short wavelength infrared (SWIR) photodetectors using multi-stacked modulation doped InAs self-assembled quantum dots. The detriments of direct doping on the energy levels of InAs QDs have been eliminated by choosing...

Self-assembled InAs-GaAs quantum-dot intersubband detectors
1999 Edition, Volume 35, June 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The use of self-assembled InAs-GaAs quantum dots in photoconductive intersubband detectors in the far-infrared is presented. Far-infrared absorption is observed in self-assembled quantum dots in the 6-18-/spl mu/m range...

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