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1.3 µm InAs/GaAs quantum dot lasers on SOI waveguide structures
2014 Edition, June 1, 2014 - Optical Society (The) (OSA)

A 1.3-μm InAs/GaAs quantum dot laser on a silicon-on-insulator waveguide structure with a threshold current density of 300 A/cm2 and lasing temperatures greater than 100°C is fabricated by direct wafer bonding and layer transfer.

Doping effect on two-state lasing in 1.3µm InAs/GaAs quantum dot lasers
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have explained the two-state lasing in QD lasers with different doping density by the laser modal gain behavior, and shown that the laser with relatively light doping density can largely suppress the exited-state lasing.

1.3 µm InAs/GaAs quantum dot lasers on Si rib structures with current injection across direct-bonded GaAs/Si heterointerfaces
2012 Edition, September 1, 2012 - Optical Society (The) (OSA)

A 1.3 μm room-temperature InAs/GaAs quantum dot laser on a Si rib structure is demonstrated. The laser structure grown on a GaAs substrate is layer-transferred onto a patterned Si substrate by GaAs/Si direct wafer bonding without...

High-speed modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers
2010 Edition, December 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High-speed modulation characteristics of 1.3-µm InAs/GaAs high-density quantum-dot lasers are presented. The high-density quantum-dot active layers provided high net modal gain beyond 40 cm−1. Fabricated Fabry-Perot lasers have...

1.3 µm InAs/GaAs high-density quantum dot lasers
2009 Edition, October 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on newly developed high-density quantum-dot lasers that provide extremely temperature-insensitive 10.3 Gb/s operation and higher-speed operation up to 20 Gb/s which is the first demonstration in 1.3 mum quantum-dot lasers.

25 Gbps direct modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The modulation characteristics of 1.3-µm InAs/GaAs high-density quantum-dot lasers is presented. The eight-stacked high-density quantum-dot layers provided high net modal gain of 46 cm−1. Fabricated Fabry-Perot lasers showed the 25-Gbps...

High-speed and temperature-insensitive operation in 1.3-µm InAs/GaAs high-density quantum dot lasers
2009 Edition, March 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Temperature-insensitive 10.3-Gb/s operation under fixed driving condition was demonstrated using directly-modulated InAs/GaAs high-density quantum dot lasers, maintaining an Ethernet mask margin of 48 % up to 100 °C. 20-Gb/s direct modulation has also been...

Effect of carrier transport on modulation bandwidth of 1.3-µm InAs/GaAs self-assembled quantum-dot lasers
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We newly modeled the modulation bandwidth of 1.3-µm quantum-dot lasers and analyzed experimental results. The carrier transport through the active layers was found to affect significantly the modulation bandwidth with increasing stacking-number of quantum-dot...

A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates
2011 Edition, September 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a room-temperature 1.3-µm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302µm. The laser was operated in pulsed mode. The growth was enabled...

Time Domain Travelling Wave Approach to Investigate the Multi-Mode Dynamics and the Self-Mode Locking in 1.3 µm InAs/GaAs Fabry-Perot Quantum Dot Lasers
2014 Edition, September 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report, for the first time, simulations of mode-locked pulse generation at 1.3μm in single-section QD lasers using a TDTW approach. With parametric analysis we find the conditions for obtaining pulses in agreement with experiments.

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