loading
Demonstration of High Ferroelectricity (Pr~29µC/cm2) in Zr Rich HfxZr1-xO2 Films
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we report excellent ferroelectricity with high remanent polarization (Pr) in Zr rich HZO films by using high pressure post metallization annealing (HPPMA). HZO films annealed using rapid thermal annealing (RTA)...

Demonstration of High Ferroelectricity (P $_{{r}}$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1xO2 Films
2020 Edition, Volume 41, January 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this letter, we report excellent ferroelectricity with high remanent polarization (Pr) in Zr rich hafnium zirconium oxide (HZO) films using high pressure post metallization annealing (HPPMA). HZO films annealed using rapid...

A High-Power Ferroelectric Limiter
1964 Edition, Volume 64, January 1, 1964 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A new type of solid state high-power limiter, which utilizes the large-signal nonlinear characteristics of ferroelectric materials, has been developed. Experimental 218 Mc units have handled peak input power levels in excess of 25 kw while yielding...

High permittivity ferroelectric actuators for radar applications
2009 Edition, April 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report a new method of fabricating thermal bimorph actuators utilizing high permittivity ferroelectric thin films. This device is the first known thermal cantilever actuator employing barium titanate (BaTiO 3 ) for RF applications. Compared to electrostatic actuators,...

Composition-dependent Ferroelectric Properties in Sputtered HfXZr1-XO2 Thin Films
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Ferroelectric materials with a perovskite structure have various shortcomings, including poor Si compatibility, large physical thickness, and small bandgap. HfO2-based ferroelectric materials provide a new solution for ferroelectric semiconductor devices. HfO2-ZrO2 solid...

High performance ferroelectric LC microdisplay
1999 Edition, January 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A high performance reflective microdisplay has been developed that is capable of supporting color video operation at resolutions of XGA and above. The device uses ferroelectric liquid crystal and is fabricated over a silicon substrate on to which the reflective metal...

Towards high performing ferroelectric thin films
2008 Edition, Volume 3, February 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The contribution concerns various processing issues of ferroelectric thin films made by chemical solution deposition. The first part is related to PZT thin films prepared by 2-methoxy-etanol route on Silicon substrate. A careful molecular design of...

Micromachined high frequency ferroelectric sonar transducers
1997 Edition, Volume 44, September 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Millimeter-sized ferroelectric monomorph sonar transducers have been built using sol-gel PZT on micromachined silicon wafers. First generation transducer arrays with diaphragms varying in size from 0.2 to 2 mm were tested. Second generation 8/spl times/8 arrays have also been built...

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the permittivity...

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty
2018 Edition, Volume 65, September 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the integration of a ferroelectric (FE) silicon-doped hafnium oxide material in ferroelectric field-effect transistor (FeFET) devices fabricated with an optimized interfacial layer in a gate-first scheme. The effect of increasing the permittivity...

Advertisement