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Degradation mechanisms of 0.1 μm AlSb/InAs HEMTS for ultralow-power applications
2008 Edition, April 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The degradation mechanisms of 0.1 mum AlSb/InAs HEMTs subjected to elevated-temperature lifetesting at three temperatures in N2 atmosphere were investigated. Device degradation exhibits the increase of non-pinch-off drain current (IDS), the...

The effect of gate metals on manufacturability of 0.1 μm metamorphic AlSb/InAs HEMTs for ultralow-power applications
2008 Edition, May 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Four types of gate metallization were investigated to evaluate the manufacturability of 0.1 mum AlSb/InAs HEMTs. It has been found that device performance strongly depends on the gate metallization. This information is essential for the manufacturability...

Reliability Evaluation of 0.1 μm AlSb/InAs HEMT Low Noise Amplifiers for Ultralow-Power Applications
2007 Edition, October 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Three-temperature lifetesting was performed to evaluate the reliability performance of 0.1 μm AlSb/InAs HEMT low noise amplifiers (LNAs) for ultralow-power applications. For the first time, the reliability performance of 0...

Lifetesting GaN HEMTs With Multiple Degradation Mechanisms
2015 Edition, Volume 15, December 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A technique is described, to efficiently evaluate the reliability of an RF semiconductor device when several different mechanisms contribute simultaneously to its wearout. This is of interest for present-day GaN HEMT devices because symptoms of several...

Evolutionary algorithm based on degradation mechanism
2014 Edition, June 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper degradation mechanism is discussed to deal with the problem of adaptive population size in evolutionary algorithm. A new evolutionary algorithm based on the degradation mechanism of population size is proposed according to a simplified...

Radiation degradation mechanisms in laser diodes
2004 Edition, Volume 51, December 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Degradation mechanisms are investigated for laser diodes fabricated with different materials and wavelengths between 660 and 1550 nm. A new approach is developed that evaluates laser degradation below the laser threshold to determine the radiation-induced recombination...

Hot carrier degradation mechanisms of short-channel FDSOI n-MOSFETs
2015 Edition, June 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The HC degradation of nanoscale FD-SOI n-MOSFETs has been investigated under the worst bias stress conditions (Vds,stress = Vgs,stress). At high stress voltages the hot carriers injected into the gate dielectric are the main degradation mechanism, superseding the...

Sponge LID - A new degradation mechanism?
2014 Edition, June 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

High performance multi wafers are a new wafer class introduced some years ago. These wafers are characterized by creating rather small grains at the start of crystallization leading to a reduced density of structural defects and an increase of up to 0.5 % in solar cell...

Electrical contacts and degradation mechanisms
1999 Edition, January 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The proper choice of a metal for contact to a semiconductor (e.g. Si, GaAs, SiC, diamond at high temperatures) or oxide (piezoelectric substrate) is a major challenge, in particular for the design and fabrication of integrated circuits. As device dimensions in very large...

Degradation mechanism of GaAs MESFET's
1979 Edition, Volume 26, July 1, 1979 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The degradation mechanism of X-band low-noise GaAs MESFET's is examined to obtain meaningful information on a common mode of failure. The devices tested have a half-micrometer gate (Au/ Mo) and source and drain ohmic contacts (Au/Ni/Au-Ge). Zero bias drain conductance...

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