loading
Complementary LDMOSFET in 0.35μm BiCMOS technology-characterization and modeling
2010 Edition, July 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, an nLDMOS and a pLDMOS are developed by slight modifications of the base process steps of 0.35μm BiCMOS technology. Extra two masks are used for the formation of the body region and the drift region with slightly added thermal budget and...

Optical receivers in 0.35 μm BiCMOS for heterogeneous 3D integration
2016 Edition, April 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Developing paradigm in high speed communication device is heterogeneous 3D integration of electronic components - designed on standard silicon wafers - and photonics, optimized in different processes. This paper shows the advantages of 3D integration and presents the...

A millimeter-wave 0.18-μm BiCMOS dual-band power amplifier
2014 Edition, March 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 0.18-μm SiGe BiCMOS concurrent dual-band power amplifier (PA) was developed. The PA can work in concurrent dual-band mode at 25.5 and 37 GHz as well as single-band mode at 25.5 or 37 GHz. The measured results show that, in the single-band mode, the dual-band PA...

RF-MEMS switch module in a 0.25 μm BiCMOS technology
2012 Edition, January 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS...

1.2 μm BICMOS Technology for Mixed Analog-digital Applications
1989 Edition, September 1, 1989 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1.2μm mixed analog-digital BICMOS technology has been developed and characterized. The objective of this technology is to achieve simultaneously high density CMOS logic (5V) and high performance bipolar transistors for analog applications (12V). In this...

A 10 GHz integrated single sideband upconverter in 0.25 μm BiCMOS technology
2011 Edition, October 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An 8-10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF...

A 10 GHz integrated single sideband upconverter in 0.25 μm BiCMOS technology
2011 Edition, October 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An 8-10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 μm BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF...

An 80 MHz noise optimized continuous-time bandpass filter in 0.25 μm BiCMOS
2007 Edition, September 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An 80 MHz bandpass filter with a tunable quality factor of 16-44 using an improved transconductor circuit is presented. The noise optimized biquad structure achieves SNR of 45 dB at IMD of 40 dB. The P-ldB compression point and IIP3 of the filter are -10 dBm and -2.68 dBm,...

A 2-18 GHz Compressed Sensing Receiver With Broadband LO Chain in 0.13-μm BiCMOS
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present an integrated 2-18 GHz four-channel compressed sensing receiver (CSRX), which performs a 128.5x sub-Nyquist acquisition with 36-Gb/s pseudorandom bit sequence (PRBS) generators in 0.13-μm BiCMOS. The integrated four-channel CSRX consists of broadband receiver chains, each...

A Fully Integrated Low-Power 30 GHz Complex Dielectric Sensor in a 0.25-μm BiCMOS Technology
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents an integrated low-power dielectric sensor in K-band frequencies implemented in a 0.25 μm SiGe BiCMOS process including the sensing front-end and readout circuits. The sensor enables the measurement of both real and imaginary part of...

Advertisement