loading
Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Carrier lifetime of 2 ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed...

Carrier capture and recombination in 2.4μm GaSb-based type-I quantum well high power diode lasers
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Carrier lifetime of 2ns was measured in GaSb-based type-I quantum-well high power laser heterostructures at threshold carrier concentration. Increased carrier capture rate was observed in...

Carrier capture studies in InGaAs quantum posts
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The capture dynamics of photogenerated carriers in InGaAs quantum posts (QPs) are investigated. We demonstrate that QPs efficiently capture carriers from the surrounding host material within a few picoseconds, making them attractive for device applications.

Carrier capture and recombination dynamics in single pyramidal quantum dots
2000 Edition, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Using self-ordered growth of GaAs/AlGaAs heterostructures on patterned substrates, we have recently demonstrated the fabrication of arrays of structurally uniform quantum dots (QDs), each situated near the tip of a sharp pyramid. In these nanostructures, the occurrence of QD barriers...

Carrier capture and escape in multisubband quantum well lasers
1994 Edition, Volume 6, September 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Carrier capture and escape processes between quantum wells and barriers via carrier-polar optical phonon interactions are theoretically studied in multisubband quantum well structures. We find that carriers in each...

Carrier capture in self-assembled InAs/InP quantum dots
1999 Edition, January 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Carrier capture of InAs quantum dots structure on InP (311)B substrate has been studied by optical measurements. Photoluminescence measurements shows a clear decrease of the decay time of the two dimensional confining layer at high temperature under lower excitation. A...

Subpicosecond carrier capture into intermixed InGaAs/GaAs quantum dots
1998 Edition, January 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. We report picosecond and subpicosecond carrier capture times. The measurements were performed on as-grown and intermixed In/sub 0.5/Ga/sub 0.5/As-GaAs quantum dots by time-resolved photoluminescence (PL). The studied quantum...

Effect of carrier capture on modulation response properties of semiconductor microdisk lasers
2008 Edition, November 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The effect of the carrier capture into quantum wells on the modulation response of semiconductor laser is investigated. It is shown that the capture limits the maximum possible modulation speed by increasing gain nonlinearities.

Carrier capture and relaxation in narrow quantum wells
1994 Edition, Volume 30, November 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In separate confined heterostructure (SCH) lasers, injected electrons and holes thermalize into a quantum well after diffusion through the outer cladding layers. The carriers move towards equilibrium by emitting optical phonons. In narrow...

Many-body theory of carrier capture and relaxation in semiconductor quantum-dot lasers
2004 Edition, January 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

For quantum dots on a wetting layer, the role of Coulomb scattering and carrier-phonon interaction for carrier capture and relaxation of carriers between the quantum-dot levels are studied theoretically

Advertisement