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CAB-DWfor 5 µm trace-width deposition of solar cell metallization top-contacts
2009 Edition, June 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reviews methods for creating solar cell grid contacts and explores how cell efficiency can be increased using CAB-DW™. Specifically, the efficiency of p-i-n structure solar cells built in-house with 90 µm...

Micro Cold Spray printed top metallization layer for solar cells
2014 Edition, June 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Our group has recently developed a non-contact direct-write print tool suitable for the top metallization layer on solar cells. This tool, termed Micro Cold Spray (MCS) allows for the direct deposition of metal powders onto a...

Novel framework for Metal Wrap Through solar cell top contact design optimization
2012 Edition, June 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The Metal Wrap Through (MWT) cell, which replace the metal busbars with several holes bored through the silicon wafer, is a high efficiency cell which had caught the attention of cell makers. But the contact design methodology for conventional...

Three-Terminal Tandem Solar Cells With a Back-Contact-Type Bottom Cell Bonded Using Conductive Metal Nanoparticle Arrays
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

To address three-terminal tandem solar cells composed of a back-contact-type Si bottom cell, which, in principle, has a tolerance against spectral variation, we fabricate the three-terminal GaAs/Si tandem device bonded using conductive metal nanoparticle...

Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contacts
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this article, we develop in parallel two fabrication methods for copper (Cu) electroplated contacts suitable for either silicon nitride or transparent conductive oxide antireflective coatings. We employ alternative seed layers, such as evaporated Ag or Ti, and optimize the...

Three-Terminal Tandem Solar Cells With a Back-Contact-Type Bottom Cell Bonded Using Conductive Metal Nanoparticle Arrays
2020 Edition, Volume 10, March 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

To address three-terminal tandem solar cells composed of a back-contact-type Si bottom cell, which, in principle, has a tolerance against spectral variation, we fabricate the three-terminal GaAs/Si tandem device bonded using conductive metal nanoparticle...

Determination of Metallization-Induced Recombination Losses of Screen-Printed Silicon Solar Cell Contacts and Their Dependence on the Doping Profile
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work presents an easy-to-implement, but rigorous method to determine the dark saturation current densities $J_{01m}$ and $J_{02m}$ under the metallized region of a silicon solar cell contact. The method is based on an autofitting procedure by the Griddler...

Metal Grid Contact Design for Four-Terminal Tandem Solar Cells
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Flat-panel tandem solar cells have demonstrated the potential to exceed the efficiencies of their single-junction constituents. However, robust design rules for tandem solar cells are currently lacking, slowing the development of cost-effective...

Adaption of Basic Metal–Insulator–Semiconductor (MIS) Theory for Passivating Contacts Within Numerical Solar Cell Modeling
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The main goal of a solar cell's contact is to simultaneously minimize the contact resistivity ρ $_\text{cont}$ and the effective recombination, the latter often expressed via $J_\text{0, cont}$ . To model the resulting solar cell characteristics, the...

Copper-Plating Metallization With Alternative Seed Layers for c-Si Solar Cells Embedding Carrier-Selective Passivating Contacts
2020 Edition, Volume 10, March 1, 2020 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this article, we develop in parallel two fabrication methods for copper (Cu) electroplated contacts suitable for either silicon nitride or transparent conductive oxide antireflective coatings. We employ alternative seed layers, such as evaporated Ag or Ti, and optimize the...

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