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A Ku-Band 8-Element Phased-Array Receiver in O.18-μm CMOS Technology
2018 Edition, November 1, 2018 - Institute of Electronics, Information and Communication Engineers, The (IEIC)

A 15-18 GHz 8-element phased-array receiver for wireless application is presented in this paper. Each element includes a low noise amplifier (LNA), a 5-bit passive phase shifter, a 4-bit attenuator. Two pre-amplifiers are applied to compensate the insertion loss of the...

An 8.7 GHz Si photodiode in standard 0.18-μm CMOS technology
2010 Edition, July 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work investigates a new Si photodiode by 0.18-p, m CMOS technology for optical communication at 850-nm. The structure of the proposed Si PD is in octagonal shape and consists of PN diodes with deep N-well surrounded. An extra voltage on deep...

Corrections to "A novel distributed amplifier with high gain, low noise, and high output power in 18-μm cmos technology" [Apr 13 1533-1542]
2013 Edition, Volume 61, July 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

There is an error in the order of the references [18] and [19] in the above-named article [ibid., vol. 61, no. 4, pp. 1533-1542, Apr. 2013]. The order of these references should be exchanged. The corrected order (and numbering) of these two references are shown as...

GHz response of Si photodiodes fabricated with 0.35-µm Si BiCMOS technology
2012 Edition, August 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We fabricated Si photodiode from 0.35 µm BiCMOS process and measured the sensitivity and the frequency response at the wavelength of 650nm. The responsivity was 0.11 A/W and the bandwidth was about 1 GHz.

40 GHz Si/Ge Uni-Traveling Carrier Waveguide Photodiode
2014 Edition, Volume 32, October 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report a Si/Ge waveguide-coupled uni-traveling carrier (UTC) photodiode for high-power high-speed applications. Using the uni-traveling carrier structure rather than a PIN structure, capacitance and power handling are decoupled from responsivity and transit-time, enabling a...

10 GHz bandwidth of Si avalanche photodiode fabricated by standard 0.18 цm CMOS process
2014 Edition, July 1, 2014 - Engineers Australia

Silicon avalanche photodiode was fabricated by O.lSjum CMOS process and was characterized. The bandwidth of 10GHz with the sensitivity of 0.1 AW was achieved with the electrode spacing of 0.84/urn and the detection area of 10×10/urn2.

Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
2005 Edition, Volume 17, July 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Vertical-incidence Germanium photodiodes grown on thin strain-relaxed buffers on Silicon substrates are reported. For a mesa-type detector with a diameter of 10 μm, a resistance-capacitance-limited 3-dB bandwidth of 25.1 GHz at an incident wavelength of 1552 nm and zero...

1.1 GHz MSM photodiodes on relaxed Si/sub 1-x/Ge/sub x/ grown by UHV-CVD
1998 Edition, January 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The growing market for /spl lambda/=850 nm data links that operate at bit rates >1 Gbit/sec has increased the interest in Si-based monolithically integrated photoreceivers due to the reduced cost arising from their compatibility with existing Si manufacturing technology....

Microwave nonlinearities in Ge/Si avalanche photodiodes having a gain-bandwidth product of 300 GHz
2009 Edition, March 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The nonlinearity of a 300 GHz gain bandwidth separate absorption charge multiplication (SACM) Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second order dynamic range was 84.8 dB-Hzfrac12. The largest third order dynamic...

Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
2009 Edition, Volume 21, July 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Fast Ge-on-Si p-i-n photodiodes are fabricated and their frequency response is measured up to 67 GHz at a wavelength of 1550 nm. At a bias voltage of -2 V, a 3-dB bandwidth (BW) of 49 GHz is achieved. This is to the best of the authors' knowledge the highest BW ever...

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