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An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz f/sub T/ and 2 S/mm extrinsic transconductance
1999 Edition, Volume 20, May 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 /spl mu/m gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum...

0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor
1997 Edition, Volume 18, June 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The fabrication and performance of ultra-high-speed 0.3-/spl mu/m gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop layer in the...

OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBE
1992 Edition, Volume 39, October 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The current-gain cutoff frequency (f/sub T/) performances of InAlAs/InGaAs/InP MODFETs on OMVPE-grown heterostructures and MBE-grown heterostructures are compared. InAlAs/InGaAs/InP MODFETs on OMVPE-grown...

Performance study of InGaAs/InAlAs/InP MODFETs on heterostructures grown by OMVPE and MBE
1992 Edition, January 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The authors have fabricated and characterized MODFETs on OMVPE (organometallic vapor-phase epitaxy)-grown InAlAs/InGaAs/InP heterostructures. Excellent DC and RF characteristics were obtained. Extrinsic DC transconductance as high as 1020...

Erratum to "0.03-μm gate-length enhancement-mode InAlAs/InGaAs/InP MODFET's with 300 GHz fT and 2 S/mm extrinsic transconductance"
1999 Edition, Volume 20, June 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Due to an editorial error in the above-named letter, the word "An" was erroneously inserted before the title. The title should appear as above both in the paper and on the Table of Contents.

Highest cryogenic transconductance of 2.2 S/mm for 400-nm-gate InGaAs/InAlAs PHEMT fabricated on [411]A-oriented InP substrate
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We fabricated an In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As pseudomorphic high electron mobility transistor (PHEMT) with a gate length (L/sub g/) of 400 nm on a [411]A-oriented InP substrate by molecular beam epitaxy...

ST 3:1998 - For Television Analog Recording — Frequency Response and Operating Level of Recorders and Reproducers — Audio 1 Record on 2-in Tape Operating at 15 and 7.5 in/s
1998 Edition, June 3, 1998 - Society of Motion Picture and Television Engineers

This standard specifies the frequency response and operating level for recorders and reproducers for audio 1 record for 2-in quadruplex video magnetic tape recording at 15 in/s and 7.5 in/s (381 mm/s and 190.5 mm/s), as...

3-1982 - IEEE Recommended Practice in the Selection of Reference Ambient Conditions for Test Measurements of Electrical Apparatus
1982 Edition, June 8, 1982 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

It is the purpose of this document to identify and recommended a set of standard reference values for certain ambient parameters which are significant in electrical test measurements.

3-1962 - AIEE Guiding Principles for the Selection of Reference Values for Electrical Standards
1962 Edition, December 15, 1962 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This pamphlet serves as a guide in the preparation or revision of standards for testing or performance of apparatus or materials of specific types or fields of use. If a particular existing standard calls for other provisions, the existing standard should be followed. The values given are not...

3-1943 - AIEE Standards for Guiding Principles for the Selection of Reference Values for Electrical Standards
1943 Edition, February 15, 1943 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This pamphlet serves as a guide in the preparation or revision of standards for apparatus or materials of specific types or fields of use. If a particular existing standard calls for other provisions, the existing standard should be followed. The values given are not mandatory, but are recommended...

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