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Design of Two LNA Topologies in 0.35 µm CMOS Technology for 2 GHz Frequency Range
2018 Edition, May 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents two LNA topologies for 2 GHz frequency range. The aim was to investigate the impact of inductors on the design flow of the amplifiers. The first topology contains two inductors and utilizes two feedback paths (positive and negative), while the other topology is...

A LC quadrature VCO with wide tuning range for TRPC-UWB application in 0.13-µm CMOS
2014 Edition, October 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a wideband LC quadrature voltage controlled oscillator (VCO) for novel TRPC-UWB transceiver in 0.13 µm CMOS technology. Based on series coupling structure, and through combining the advanced switched capacitor and MOS varactor techniques, this QVCO's continuous...

A 15–50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-µm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port-to-port isolations of better than 30 dB from 15 to 50 GHz for both down and up-conversion with...

A 22-dBm 24-GHz power amplifier using 0.18-µm CMOS technology
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A fully integrated 24-GHz 22-dBm power amplifier was designed and fabricated in 0.18-µm CMOS technology. Optimized device size selection and resonance matching techniques are adopted in this single stage power amplifier design. High pass matching circuit is...

A wideband millimeter-wave frequency doubler-tripler in 0.13-µm CMOS
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A combined frequency doubler and tripler is proposed for wideband millimeter wave frequency generation in CMOS. The circuit consists of a push-push FET frequency doubler along with a single-balanced mixer based frequency tripler. The frequency doubler-tripler can...

A 22-dBm 24-GHz power amplifier using 0.18-µm CMOS technology
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A fully integrated 24 GHz 22 dBm power amplifier was designed and fabricated in 0.18-µm CMOS technology. Optimized device size selection and resonance matching techniques are adopted in this single stage power amplifier design. High pass matching circuit is...

A 15-50 GHz broadband resistive FET ring mixer using 0.18-µm CMOS technology
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A compact and broadband 15 to 50 GHz resistive FET ring mixer using 0.18-µm CMOS technology is presented in this letter. This mixer exhibits a conversion loss of 13-17 dB and the port to port isolations of better than 30 dB from 15-50 GHz for both down and up-conversion with...

An 11/19-GHz VCO using switchable transformer in 0.18-µm CMOS
2012 Edition, July 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a novel switchable transformer to enhance the quality factors, to reduce the chip area, and to increase the inductance tuning range. The proposed switchable transformer is applied to an LC-tank of a VCO which is designed with two wide oscillating frequency bands....

L-band wideband filter in 0.13 µm CMOS with high common-mode rejection
2012 Edition, June 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An L-band filter in 0.13 µm CMOS with high common-mode rejection over a wide bandwidth and high differential out-of-band rejection over a large frequency range is presented. The high common-mode rejection in the passband is realized by shifting the common-mode transmission...

Active transversal S-band filter using lumped elements in standard 0.13 µm CMOS
2012 Edition, March 1, 2012 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An active S-band filter with high out-of-band rejection and good gain in a standard 0.13 µm CMOS process is fabricated. The filter topology is based on the transversal filter concept using lumped elements. The measured passband is from 2.3 - 3.8 GHz with an insertion...

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