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A wideband circuit model of on-chip spiral inductor in 0.13µm CMOS process
2009 Edition, October 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, a simple wideband circuit model for on-chip spiral inductors is presented. The model shows excellent agreement with measured data mostly within 4.91% across a variety of inductor geometries up...

Wideband Circuit Model for Planar EBG Structures
2010 Edition, Volume 33, February 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we present a comprehensive equivalent circuit model to accurately characterize an important class of electromagnetic bandgap (EBG) structures over a wide range of frequencies. The model is developed based on a...

Wideband circuit model for busbar impedance
2000 Edition, Volume 2, January 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The series R-L equivalent circuit model, often used to represent laminated busbar impedance in time-domain simulations, cannot provide accurate results because the effective AC laminated busbar resistance and inductance depend on frequency. Using the series R-L...

A wideband circuit model of on-chip spiral inductor
2008 Edition, Volume 1, April 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, a new circuit model for on-chip spiral inductors is presented. The model fits very well with the measured data in 0.13 mum CMOS technology. Since the proposed model consists of...

Wideband circuit modelling of waveguide discontinuities by FD-TD methods
1993 Edition, January 1, 1993 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The authors demonstrate the derivation of wideband equivalent circuits from finite-difference time-domain (FD-TD) analysis and their subsequent use in practical computer-aided design (CAD) and synthesis situations. The inductive post and the 90 degrees H-plane corner are...

Wideband Circuit Model of Silicon-Based Interconnects Up to 50 GHz
2007 Edition, December 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a wideband circuit model of silicon-based interconnects for predicting their metallic and silicon substrate losses at higher frequencies. The skin and proximity effects in the structure are characterized using the partial element...

Design of a single-feed all-metal 63 GHz Fabry-Perot cavity antenna using a TL and a wideband circuit model
2009 Edition, June 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we show a wideband transmission line (TL) model for a Fabry-Perot cavity (FPC) antenna which is designed at a center frequency of 63 GHz using a thick and slotted metallic partially reflective surface. Then, by using the...

A scalable wideband equivalent circuit model for on-chip microstrips up to 110 GHz
2014 Edition, October 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a scalable wideband equivalent circuit model for microstrips in silicon-based integrated circuits. The model was developed over a wide range of dimensions and was found to be accurate to within 10% over the wide...

Compact Wideband Equivalent-Circuit Model for Electrical Modeling of Through-Silicon Via
2011 Edition, Volume 59, June 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a compact wideband equivalent circuit model for electrical modeling of through-silicon vias (TSVs) in 3-D stacked integrated circuits and packaging. Rigorous closed form formulas for the resistance and inductance...

Wideband equivalent circuit model for a through silicon via with effective substrate current loop
2015 Edition, December 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An equivalent circuit model of through silicon via considering the eddy current flow inside the silicon is proposed to predict the electrical performance up to 100GHz. The parasitic elements of the proposed circuit model are derived by the structural...

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