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A G-band balanced tripler using 0.1 µm GaAs process
2016 Edition, July 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a G-band balanced tripler using 0.1 um GaAs process. An anti-parallel diode pair (APDP) structure is applied in the tripler to obtain the third harmonic signal. The balanced architecture with two 90° Lange...

A K-band Driven Power Amplifier for Automotive Radar Applications in 0.15-µm GaAs pHEMT Process
2019 Edition, December 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, a K-band driving power amplifier (DPA) with high gain and high output 1 dB compression point (P-1dB,out) is presented, which is designed and manufactured in the 0.15-μm GaAs pHEMT process. In order to achieve high gain with simple direct current...

A broadband stacked power amplifier using 2-µm GaAs HBT process for C-band applications
2008 Edition, December 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A broadband stacked power amplifier using 2-mum GaAs HBT process is presented in this paper for C-band applications. The PA is designed based on a dual-stacked circuit topology including a common-emitter (CE) and a common-base (CB) amplifier....

A 29-GHz low phase noise differential voltage controlled oscillator using 2-µm GaAs HBT process
2008 Edition, December 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 29-GHz low phase noise differential voltage controlled oscillator (VCO) using 2-mum AlGaAs/GaAs HBT process is presented in this paper. A common-emitter (CE) topology with a capacitive feedback is utilized to the circuit design. This circuit demonstrates...

24-GHz MMIC development using 0.15-µm GaAs PHEMT process for automotive radar applications
2008 Edition, December 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents 24-GHz monolithic microwave integrated circuit (MMIC) development for automotive radar applications. The chipset consists of a low noise amplifier (LNA), a power amplifier (PA) and a mixer. The LNA exhibits a small signal gain of 20 dB from 19 to 32...

A 0.1 to 5-GHz Mixer using 0.5-µm E/D-mode GaAs pHEMT Process
2019 Edition, December 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper demonstrates a 0.1 to 5-GHz mixer core for cellular receiver application. The presented mixer core integrates the mixing cell, IF amplifier and LO buffer fabricated using 0.5-µm E/D-mode GaAs pHEMT process. To realize broadband application, both the IF...

A miniatured 28-GHz FEM using a 0.15-µm InGaAs/GaAs E-mode pHEMT process
2019 Edition, October 1, 2019 - European Microwave Association (EuMA)

This paper presents a miniaturized 28-GHz FEM implemented in 0.15-μm InGaAs/GaAs E-mode pHEMT process. It is designed for use with 28-GHz switching beamforming systems. In order to miniaturize the system, the RF FEM is mounted on the printed circuit board in the form of...

An E-Band(71–76, 81–86 GHz) balanced frequency tripler for high-speed communications
2009 Edition, December 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An E-Band transistor-based balanced frequency tripler is implemented using a 0.15 µm GaAs mHEMT process which can be integrated into a single-chip RF front-end. The balanced configuration with 90° hybrids at the input and output...

A high gain E-band MMIC LNA in GaAs 0.1-µm pHEMT process for radio astronomy applications
2014 Edition, October 1, 2014 - European Microwave Association

In this paper, we present an E-band MMIC low noise amplifier (LNA) using 0.1-μm GaAs pHEMT technology operating in 1V and 2V drain voltage. The E-band LNA shows small signal gain of 28 dB from 62 to 77 GHz with DC power consumption 44 mW. Noise measurement conducts in...

Multi-band Balanced Couplers with Broad-band Common-mode Suppression
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Three novel single/multi-band balanced couplers with wide-band common-mode suppression are proposed. In these double-functionality balanced-coupler architectures, double-sided parallel-strip line (DSPSL) 180∘ phase inverters are used to realize the...

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