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IEC PAS 61076-3-104:2002 - Connectors for electronic equipment - Part 3-104: Detail specification for 8-way, shielded free and fixed connectors, for data transmissions with frequencies up to 600 MHz minimum
June 19, 2002 - IEC - International Electrotechnical Commission

Establishes uniform specifications, type testing requirements and quality assessment procedures for 8 ways connectors, with up to 4 pairs, for frequencies up to 600 MHz minimum, and intended to be used at different locations within cabling for ICT, home entertainment and...

A 44μW/10MHz minimum power operation of 50K logic gate using 65nm SOTB devices with back gate control
2013 Edition, October 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Performance, leakage and Emin on 65-nm SOTB and bulk were compared. We evaluated ring oscillators for SOTB and bulk with the same layout pattern. It is shown that operation frequency can be controlled from 6MHz to 40MHz, leakage of sleep mode can be...

IEC 61076-3-104:2003 - Connectors for electronic equipment - Part 3-104: Rectangular connectors - Detail specification for 8-way, shielded free and fixed connectors for data transmissions with frequencies up to 600 MHz minimum
April 2, 2003 - IEC - International Electrotechnical Commission

Establishes uniform specifications, type testing requirements and quality assessment procedures for 8-way connectors, with up to 4 pairs, for frequencies up to 600 MHz minimum, and intended to be used at different locations within cabling for information and communications...

A 2–1100 MHz wideband low noise amplifier with 1.43 dB minimum noise figure
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A new wideband low noise amplifier (LNA) is proposed in this paper. The LNA utilizes a composite NMOS/PMOS cross-coupled transistor pair to increase the amplification while reducing the noise figure. The introduced approach provides partial cancellation of noise generated by...

III-V Gate-wrap-around field-effect-transistors with high-k gate dielectrics
2014 Edition, June 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

As MOSFETs continue scaling down for low power logic applications, non-planar multi-gated field-effect-transistors have been brought out to overcome the electrostatics control issue. To achieve the ultimate gate electrode control, great efforts have been...

Low-Power High-Performance Asymmetrical Double-Gate Circuits Using Back-Gate-Controlled Wide-Tunable-Range Diode Voltage
2007 Edition, Volume 54, September 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a new power-reduction scheme using a back-gate-controlled asymmetrical double-gate device with robust data-retention capability for high-performance logic/SRAM power gating or...

A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM
2015 Edition, Volume 35, November 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The authors demonstrate an ultra-low-power microcontroller unit (MCU) with an embedded atom-switch ROM, which performs 0.39-V operation voltage and 18.26-pJ/cycle minimum active energy (or 18.26-μW/MHz minimum active power) at 14.3 MHz. The MCU is...

A high density 0.10 /spl mu/m CMOS technology using low K dielectric and copper interconnect
2001 Edition, January 1, 2001 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work components of the next generation 0.10 /spl mu/m CMOS technology are presented. They form the core of a platform encompassing logic, non volatile memory, and analog blocks. High performance bulk devices use 18 /spl Aring/ gate oxide (24...

A 9-Bit 10-MHz 28-μW SAR ADC using Tapered Bit Periods and a Partially Interdigitated DAC
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A successive-approximation-register (SAR) analog-to-digital converter (ADC) incorporates "tapered bit periods" to reduce power consumption by minimizing the digital-to-analog converter (DAC) timing overhead. Utilizing a variable delay line and the standard SAR logic, the...

An RF-Powered Wireless Temperature Sensor for Harsh Environment Monitoring With Non-Intermittent Operation
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a fully integrated RF-powered temperature sensor with non-intermittent operation. The sensor is powered up wirelessly from a 915-MHz incident signal using a power-efficient RF energy harvester, uses a...

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