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A 220-μW -83-dBm 5.8-GHz Third-Harmonic Passive Mixer-First LP-WUR for IEEE 802.11ba
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 40-nm CMOS IEEE 802.11ba low-power wake-up receiver (LP-WUR) is presented. It receives 802.11ba messages generated by an 802.11 orthogonal frequency-division multiplexing (OFDM) transmitter operating at 5.8 GHz. The power consumption of the RF front-end is...

A Sub-1V, 220 μW Receiver Frontend for Wearable Wireless Sensor Network Applications
2018 Edition, May 27, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Minimizing the dissipated power of RF transceivers is the primarily target to meet the requirements of wearable wireless sensor networks (W-WSN). This paper presents an Ultra-Low Power (ULP) receiver with RF performance exceeding the requirements of the intended application. Thanks to the highly...

A Compact +10/+5 dBm 800/2600 MHz LTE Driver Amplifier with Ground-Bounce Reduction
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A reconfigurable, compact, dual-band radio frequency driver amplifier (DA) is presented. The proposed DA operates in the 800 MHz and 2600 MHz LTE bands using a single inductor for both bands. The single-ended DA demonstrates a ground bounce reduction technique using...

A 163–180 GHz 2×2 amplifier-doubler array with peak EIRP of +5 dBm
2013 Edition, June 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a 2×2 amplifier-multiplier array with on-chip antennas at 163-180 GHz in 45 nm CMOS SOI technology. The measured EIRP is > 2 dBm at 165-175 GHz with a peak value of 5 dBm at 170 GHz meeting the stringiest metal-density...

A SiGe Multiplier Array With Output Power of 58 dBm at 200–230 GHz
2016 Edition, Volume 64, July 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents an integrated four-way power-combining multiplier for 200-230-GHz applications in an advanced 90-nm silicon germanium HBT technology. The active multiplier is implemented using balanced transistor pairs driven by pseudodifferential power amplifiers (PAs) at 100-120...

A 2.4 GHz Power Amplifier With 40% Global Efficiency at ${-}$ 5 dBm Output for Autonomous Wireless Sensor Nodes
2015 Edition, Volume 25, April 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Energy scavenged Wireless Sensor Nodes (WSNs) usually require a small output power ( 0 dBm) due to their short-range application and limited power budget. This makes the RF Power Amplifier (PA) design differ from conventional PAs as the output power becomes comparable to the PA...

A 5 GHz, 21 dBm output-IP3 resistive feedback LNA in 90-nm CMOS
2007 Edition, September 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An inductor-less low noise amplifier is implemented in 90 nm CMOS using resistive feedback and non-linearity cancellation. In the high-linearity mode with non-linearity cancellation, the LNA achieves an output IP3 of 21.2 dBm and a noise figure of 2.9 dB at 5 GHz. In the...

A 28 dBm P out 5-GHz CMOS power amplifier using integrated passive device power combining transformer
2013 Edition, November 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work presents a 5-GHz power amplifier (PA) based on a tsmc 0.18-μm CMOS process. A high quality factor (Q) transformer for use by the PA was fabricated using wafer-level integrated passive device (IPD) technology and stacked on top of the active...

A 0.8 dB insertion-loss, 23 dB isolation, 17.4 dBm power-handling, 5 GHz transmit/receive CMOS switch
2003 Edition, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The highest performance to date of any switch using a CMOS process, with a 0.8 dB insertion-loss, 23 dB isolation and 17.4 dBm power-handling capability at 5 GHz, is accomplished with an optimized single-pole double-throw (SPDT) transmit/receive (T/R) switch using...

High-power waveguide integrated modified uni-traveling-carrier (UTC) photodiode with 5 dBm RF output power at 120 GHz
2016 Edition, March 1, 2016 - Optical Society (The) (OSA)

We demonstrated a monolithic InP-based high-power high-speed waveguide integrated modified UTC photodetector. The chip delivers maximum RF output power levels of 8.9dBm to 5.1dBm in the frequency range between 60GHz and 120GHz.

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