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SEE characterization of the AMS 0.35 μm CMOS technology
2013 Edition, September 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work presents experimental results for the single-event effects characterization of a commercial (Austria Microsystems) 0.35 μm CMOS technology. It improves and expands previous results. The knowledge gained is being applied in the development of a RHBD digital...

Miniature 0.25-μm CMOS distributed amplifier using on-chip inductors
2010 Edition, July 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A CMOS distributed amplifier incorporating on-chip patterned ground shield (PGS) spiral inductors has been developed using a standard low-cost 0.25-μm CMOS process. Measured results show that this distributed amplifier has an average gain of 7 dB, return loss of...

Poly Encapsulated LOCOS Lateral Isolation for 0.25 μm CMOS
1996 Edition, September 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper the feasibility of a lateral isolation scheme based on poly encapsulated LOCOS for 0.25 μm CMOS technologies is demonstrated. Excellent bird's beak dimension control is achieved with limited process complexity. The influence of field oxide recess and presence of...

Framed Poly Buffer LOCOS Technology for 0.35 μm CMOS
1993 Edition, September 1, 1993 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An advanced isolation method, Framed Poly-Buffer LOCOS (FPBLOCOS), for a 0.35 μm CMOS technology is presented in this paper. The bird's beak length of the FPBLOCOS isolation technique is smaller compared to the Poly Buffer LOCOS isolation scheme. Excellent thin gate oxide quality and...

0.5 μm CMOS Device Design and Characterization
1987 Edition, September 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The design and characterization of a high performance 0.5 μm channel CMOS is described. The design features thin epi with retrograded n-well, an n+ polysilicon gate electrode, 12.5 nm gate oxide, shallow source/drain diffusions, and thin self-aligned titanium silicides. To...

Device Characterisation of a High-Performance 0.25 μm CMOS Technology
1992 Edition, September 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The device design, fabrication and characterisation of NMOS and PMOS transistors of a 0.25 μm CMOS technology will be discussed. The devices were optimized for a reduced power supply voltage of 2.5 V. High quality devices with good control of short channel effects were...

4 Gbit/s Driver/Multiplexer in 0.8 μm CMOS
1996 Edition, September 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A low-swing high-speed differential CMOS output-driver/multiplexer is presented. A testchip, designed in a standard 0.8 μm CMOS process, has performed 4 Gbit/s multiplexing of a 16-bit fixed-pattern. Design and measurements of this testchip are presented

22 GHz amplifier using a 0.12 μm CMOS technology
2006 Edition, May 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 22 GHz low-noise amplifier (LNA) was designed, fabricated in standard 0.12 μm CMOS technology and measured. The LNA chip achieves a maximum gain of 5.5 dB, a noise figure of 10.3 dB and return losses at in-/output of 15 and 10 dB, respectively. The LNA operates...

Millimeter-wave static frequency divider in 0.13-μm CMOS technology
2011 Edition, June 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Frequency dividers are one of the most significant blocks in Millimeter-wave communication systems and became a research hotspot in recent years. In this paper, an 8:1 static divider is implemented in 0.13-μm CMOS technology. The realized static divider achieved a measured...

A 26-GHz LC-QVCO in 0.13-μm CMOS
2007 Edition, December 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 26 GHz quadrature voltage controlled oscillator designed in a 0.13-μm CMOS process is presented. It consists of two differential oscillators coupled to oscillate in quadrature through transistors and mutual inductance between the source nodes. The oscillator measures a...

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