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A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
2010 Edition, Volume 45, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz,...

A 0.13µm SiGe BiCMOS technology featuring f T /f max of 240/330 GHz and gate delays below 3 ps
2009 Edition, October 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f T =240 GHz, f max =330 GHz, BV CEO =1.7 V) along with high-voltage HBTs (f...

Fully Integrated Differential Distributed VCO in 0.35- $\mu{\hbox {m}}$ SiGe BiCMOS Technology
2007 Edition, Volume 55, January 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a fully integrated differential distributed voltage-controlled oscillator implemented in a 0.35-mum SiGe BiCMOS technology. The delay variation by a positive feedback tuning technique, adopted from the ring oscillators, is demonstrated as...

An X-Band Slow-Wave T/R Switch in 0.25- $\mu\hbox{m}$ SiGe BiCMOS
2014 Edition, Volume 61, February 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This brief presents a fully integrated X-band transmit/receive (T/R) switch using slow-wave transmission lines for X-band phased-array radar applications. The T/R switch was fabricated in a 0.25- μm SiGe bipolar CMOS (BiCMOS) process and occupies 0...

A Fully Integrated X-Band Phased-Array Transceiver in 0.13- $\mu{\hbox{m}}$ SiGe BiCMOS Technology
2016 Edition, Volume 64, February 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents the design of an X-band phased-array transceiver core chip in 0.13-μm SiGe BiCMOS technology. The system is based on the all-RF architecture and contains switches, low-noise amplifier (LNA), power amplifier (PA), and the common leg 5-bit...

A 9-bit Quadrature Direct Digital Synthesizer Implemented in 0.18- $\mu{\hbox {m}}$ SiGe BiCMOS Technology
2008 Edition, Volume 56, May 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper describes a 9-bit 6.2-GHz low power quadrature direct digital synthesizer (DDS) implemented in a 0.18-mum SiGe BiCMOS technology. With a 9-bit pipeline accumulator and two 8-bit sine-weighted current steering DACs, this DDS is...

220–250-GHz Phased-Array Circuits in 0.13- $\mu{\hbox {m}}$ SiGe BiCMOS Technology
2013 Edition, Volume 61, August 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper describes the design of 220-250-GHz phased-array circuits in 0.13- μm BiCMOS technology. The design aspects of the active and passive devices that are used in the phased-array systems, such as balun, Wilkinson divider, and branch-line...

A 0.13- $\mu{\hbox {m}}$ SiGe BiCMOS Colpitts-Based VCO for $W$ -Band Radar Transmitters
2013 Edition, Volume 61, January 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a Colpitts-based voltage-controlled oscillator (VCO) for W-band radar applications. In the proposed circuit, the oscillation signal is directly drawn from the switching transistor bases by means of the primary winding of a transformer tank, while the...

Blue-Enhanced PIN Finger Photodiodes in a 0.35- $\mu{\hbox {m}}$ SiGe BiCMOS Technology
2009 Edition, Volume 21, November 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Finger photodiodes in PIN technology are introduced to enhance the responsivity for blue and ultraviolet light. A thick low doped epitaxial layer results in high responsivity and high bandwidth also for red and near-infrared light. Results of PIN finger...

Millimeter-Wave Frequency Doubler With Transistor Grounded-Shielding Structure in ${\hbox {0.13-}}\mu{\hbox {m}}$ SiGe BiCMOS Technology
2011 Edition, Volume 59, May 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A low conversion-loss monolithic frequency doubler has been developed for D-band signal generation in 0.13-μm SiGe BiCMOS technology. The circuit uses a single-transistor topology with a novel grounded-shielding structure, which can efficiently reduce the...

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