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56-Gbit/s Operations of Mach-Zehnder Modulators using 300-µm-Long Membrane InGaAsP Phase Shifters and SiN waveguides on Si
2019 Edition, March 1, 2019 - Optical Society (The) (OSA)

Mach-Zehnder modulators using 300-µm-long membrane phase shifters and SiN waveguides, in which InGaAsP core is buried with InP, are fabricated on Si. Devices exhibit...

Distributed amplifiers in InP DHBT for 100-Gbit/s operation
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Two single-ended distributed amplifiers were designed and fabricated using a 0.7-µm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier's gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier's gain...

Distributed amplifiers in InP DHBT for 100-Gbit/s operation
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Two single-ended distributed amplifiers were designed and fabricated using a 0.7-µm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier's gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier's gain...

10-Gbit/s operation of electroabsorption modulator integrated with distributed Bragg reflector laser
2004 Edition, Volume 1, January 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report the 10-Gbit/s operation of electroabsorption modulator integrated with a distributed Bragg reflector (DBR) laser. Its small signal 3-dB bandwidth was measured 6.5 GHz, and clear eye opening was obtained with 10-Gbit/s NRZ modulation.

30 Gbit/s operation of a traveling-wave electroabsorption modulator
1999 Edition, Volume 3, January 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Electroabsorption modulators with traveling-wave electrodes have been designed and fabricated using MOCVD grown InGaAsP-InGaAsP quantum wells. 30-Gbit/s transmission was demonstrated with a 2-/spl mu/m-wide 300-/spl mu/m-long device.

Reliable uncooled 10-Gbit/s operation of GaInNAs-SQW laser
2002 Edition, January 1, 2002 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1.27-/spl mu/m GaInNAs-SQW edge-emitting laser diode (LD) demonstrated 80/spl deg/C 10-Gbit/s direct-modulation. Stable aging at 85/spl deg/C shows the potential of this material LDs for cost-effective long-wavelength light sources.

Up to 80-Gbit/s operations of 1:4 demultiplexer IC with InP HBTs
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report up to 80-Gbit/s operations of a 1:4 demultiplexer (DMX) IC with InP HBTs of f/sub T/=292 GHz, f/sub max/=308 GHz. The circuit features are 1) the multiphase clock (MPC) architecture to suppress the increase of the power consumption, and 2)...

40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells
2005 Edition, January 1, 2005 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We demonstrate 40 Gbit/s operation of an InP-based 1.3 mum laser-integrated electroabsorption modulator using an identical InGaAlAs quantum well stack in both device sections. Characteristic data are 22 mA threshold current and 35 dB side-mode...

40-Gbit/s operation of InGaAs/InAlAs MQW electroabsorption modulator module with very low driving-voltage
1996 Edition, Volume 3, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

4O-Gbit/s NRZ operation is demonstrated with the electroabsorption modulator modules using strain-compensated InGaAs/lnAlAs MQW structures. Clear eye patterns are observed with very low driving-voltages as small as 0.9 V/sub pp/.

Heterogeneously Integrated Mach-Zehnder Modulator Using Membrane InGaAsP Phase Shifter and Hydrogen-Free SiN Waveguide on Si Platform
2018 Edition, September 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A Mach-Zehnder modulator with $300-\mu m$ -Iong membrane InGaAsP phase shifters shows V, L of 0.3 Vcm and 40-Gbit/s NRZ modulations in the C band. Low-temperature-deposited hydrogen-free SiN waveguides...

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