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5.8-GHz CMOS T/R switches with high and low substrate resistances in a 0.18-μm CMOS process
2003 Edition, Volume 13, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Two single-pole, double-throw transmit/receive switches were designed and fabricated with different substrate resistances using a 0.18-/spl mu/m p/sup $/substrate CMOS process. The switch with low substrate...

A 3.1-8 GHz CMOS UWB front-end receiver
2011 Edition, May 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A two-stage down-conversion architecture for 3.1-8 GHz ultra-wideband receiver front-end is designed which uses a local oscillator frequency equal to half the input frequency. The down-conversion technique is performed in two steps based on half-RF architecture to...

Multi-GHz CMOS oscillators
1994 Edition, January 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A high frequency oscillator circuit in CMOS has been designed. The circuit uses inductors and capacitors to form a tank circuit while coupled CMOS inverters provide the positive feedback to sustain oscillations. The simulated performance is an order...

5+ GHz CMOS prescaler
2001 Edition, January 1, 2001 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper addresses the design of high-performance and low power circuits in SOI technology. In particular, our ultra thin silicon (UTSi/sup (R)/) silicon-on-sapphire (SOS) process has successfully been used to design a working divide-by-2...

8-GHz CMOS quadrature VCO using transformer-based LC tank
2003 Edition, Volume 13, October 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A fully integrated quadrature VCO at 8 GHz is presented. The VCO is implemented using a transformer-based LC tank in 0.18 /spl mu/m CMOS technology, in which two VCOs are coupled to generate I-Q signals. The VCO is realized employing the drain-gate...

94 GHz CMOS down-conversion micromixer
2017 Edition, July 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A W-band (75∼110 GHz) down-conversion mixer for 94 GHz image radar sensors in 90 nm CMOS is reported. Micromixer-based gain-enhanced technique, i.e. inductive series-peaking gain-enhanced single-in differential-out (SIDO) class-AB RF GM stage, is used to...

Design considerations for 60 GHz CMOS radios
2004 Edition, Volume 42, December 1, 2004 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

With the availability of 7 GHz of unlicensed spectrum around 60 GHz, there is a growing interest in using this resource for new consumer applications requiring very high-data-rate wireless transmission. Historically, the cost of the 60 GHz...

A 290-GHz CMOS heterodyne integrated imager
2016 Edition, August 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent...

A 2.4 GHz CMOS power amplifier
2016 Edition, June 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A CMOS amplifier at 2.4GHz has been implemented. The developed power amplifier has a compact size of 1.3×0.9 mm2. The power amplifier features 12 dB gain at 2.4 GHz frequency band.

A 416-mW 32-Gbit/s 300-GHz CMOS receiver
2017 Edition, August 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports on a 300-GHz CMOS receiver with an LNA-less architecture that operates above NMOS unity-power-gain frequency, f max . Both low power consumption and high conversion gain are achieved using a high-performance...

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