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1.95-μm strained InGaAs-InGaAsP-InP distributed-feedback quantum-well lasers
1994 Edition, Volume 6, December 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Distributed-feedback emission from strained InGaAs-InGaAsP-InP quantum well lasers has been examined over a temperature range of 130 K to 300 K. Continuous single-mode output from 190 to 300 K with a side-mode-suppression ratio of about...

InGaAs/InGaAsP quantum well distributed feedback laser
1988 Edition, Volume 35, December 1, 1988 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The authors describe a deep 900-AA first-order grating that was fabricated on the top InGaAsP waveguide layer of a three-quantum-well separate-confinement heterostructure (SCH) wafer to provide for distributed-feedback (DFB) operation at 1.515 mu m. The SCH wafer...

Improved wavelength trimming of distributed-feedback lasers using very narrow multiple quantum wells
1999 Edition, Volume 2, January 1, 1999 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We succeeded in wavelength trimming DFB lasers over a 0.44-nm spectral range toward long wavelengths. This improved spectral range is made possible by using narrow 2.7 nm multiple quantum well active region. We fabricated DFB lasers that have active layers consisting of...

Comparision of InGaAs absorptive grating structures in 1.55 /spl mu/m InGaAsP/InP strained MQW gain-coupled DFB lasers
1997 Edition, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In gain-coupled (GC) distributed-feedback (DFB) lasers of absorptive grating type, the device characteristics depend very much on the absorptive grating configuration such as duty cycle, layer thickness, conduction type, and material composition. We have fabricated 1.55 /spl...

Characteristics dependence on confinement structure and single-mode operation in 2-μm compressively strained InGaAs-lnGaAsP quantum-well lasers
1998 Edition, Volume 10, April 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The optimum confinement layer structure in 2-μm compressively strained InGaAs-InGaAsP lasers is experimentally studied. Beside the carrier overflow and absorption loss in the confinement layers, the intervalence band absorption and/or Auger recombination play an...

Structural characterization of distributed feedback laser diodes with undulation of strained-layer MQW
1997 Edition, January 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The InGaAsP/InGaAs strained-layer multiple quantum well (SL-MQW) structures for 1.55 /spl mu/m distributed feedback laser diodes have been grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The undulation or deformation of...

Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion
1995 Edition, Volume 7, September 1, 1995 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A new approach using a cap-annealing partial disordering technique is demonstrated for 1.55-μm multiple-quantum-well (MQW) distributed feedback (DFB) laser-external electroabsorption modulator monolithic integration. Good static performances of the light...

High performance buried heterostructure /spl lambda/=1.5 /spl mu/m InGaAs/AlGaInAs strained-layer quantum well laser diodes
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Today's fibre-optic communication system applications require semiconductor lasers with low threshold current and operating, preferably uncooled, over a wide temperature range at high speed. For the fabrication of 1.3-1.5 /spl mu/m wavelength quantum well laser diodes...

High-performance /spl lambda/=1.3 /spl mu/m InGaAsP-InP strained-layer quantum well lasers
1994 Edition, Volume 12, January 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Compressively and tensile strained InGaAsP-InP MQW Fabry-Perot and distributed feedback lasers emitting at 1.3-/spl mu/m wavelength are reported. For both signs of the strain, improved device performance over bulk InGaAsP and lattice-matched...

Linewidth enhancement factor of 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well DFB lasers
1991 Edition, Volume 3, October 1, 1991 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The linewidth enhancement factor alpha in a 1.3 mu m InGaAsP/InP strained-layer multiple-quantum-well (SL-MQW) distributed feedback (DFB) laser has been evaluated from the relation between the frequency and intensity modulation indexes, and...

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