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1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
2016 Edition, December 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A normally-off vertical GaN-based transistor on a bulk GaN substrate with low specific on-state resistance of 1.0 mΩ·cm2 and high off-state breakdown voltage of 1.7 kV is presented....

GaN power switching devices
2010 Edition, June 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

State-of-the-art device technologies of GaN power switching transistors are reviewed. The presented technologies solve the technical issues on GaN transistors for practical use replacing currently used Si-based power devices. Thick epitaxial growth over 6-inch Si...

600 V GaN vertical V-trench MOSFET with MBE regrown channel
2017 Edition, June 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

GaN vertical power transistors have gained increasing interest in recent years due to the advantages over lateral transistors in high voltage/high current applications. To date, two major topologies have been studied most: gate-on-epi-surface (GoE) and...

Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer
2010 Edition, June 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial layer structure is presented. A higher threshold voltage is achieved while keeping the on-state resistance low by...

p-Channel GaN Transistor based on p-GaN/AlGaN/GaN on Si
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work, we demonstrate a recessed-gate p-channel MISFET using a p-GaN (70 nm)/Al0.2Ga0.8N (15 nm)/GaN heterostructure grown by Metal-Organic Chemical Vapor Deposition (MOCVD) on Si substrate. A major benefit of such epi-structure is that...

Normally Off Vertical 3-D GaN Nanowire MOSFETs With Inverted p-GaN Channel
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap-around-gate structure for the first time. Both inductively coupled plasma dry reactive-ion...

Vertical GaN power FET on bulk GaN substrate
2016 Edition, June 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Lateral GaN transistors on Si substrates operating at voltage below 650 V are commercially available today. The main drawback of this lateral geometry is that the transistor area (and, therefore, its cost) is proportional to the breakdown voltage. In addition,...

GaN vertical nanowire and fin power MISFETs
2017 Edition, June 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

GaN vertical power devices have many advantage over lateral device in device scaling, reliability and thermal management, etc. Traditional power transistors employ p-type pockets to achieve E-mode, RESURF and avalanche capabilities. However, this topology in GaN...

Improved Vertical Isolation for Normally-Off High Voltage GaN-HFETs on n-SiC Substrates
2013 Edition, Volume 60, October 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Argon implantation of n-type SiC substrates prior to epitaxial growth of AlGaN/GaN HFETs stacks is used to decrease the vertical leakage to the conductive substrate. Normally-off p-GaN gate transistors with...

P-doped region below the AlGaN/GaN interface for normally-off HEMT
2014 Edition, August 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed...

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