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1.55 μm lasers epitaxially grown on silicon
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have developed InP based 1.55 μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was...

1.55-μm Lasers Epitaxially Grown on Silicon
2019 Edition, Volume 25, November 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have developed InP-based 1.55-μm lasers epitaxially grown on (001) Si substrates for photonics integration. To overcome the fundamental material challenges associated with mismatch III-V on Si hetero-epitaxy, a Si V-groove epitaxy platform was...

Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This work investigates the degradation processes affecting the long-term reliability of 1.3 μm InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical...

Quantum dot lasers on silicon
2014 Edition, August 1, 2014 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We describe recent developments on 1.3 μm InAs/GaAs quantum dot lasers epitaxially grown on silicon by molecular beam epitaxy. Record high output powers, lasing temperatures, and operating lifetimes among GaAs based lasers epitaxially...

Continuous Tuning of Gain Peak Linewidth Enhancement Factor from Negative to Positive with p Doping in InAs QD Laser on Si
2018 Edition, September 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We investigate the linewidth enhancement factor of 1.3 μm quantum dot lasers epitaxially grown on silicon. Both the calculation and experiment show small (<;1) linewidth enhancement factor at gain peak due to high dot uniformity. By varying the...

High performance 1.3µm InAs quantum dot lasers epitaxially grown on silicon
2014 Edition, March 1, 2014 - Optical Society (The) (OSA)

We demonstrate 1.3 μm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).

Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si
2017 Edition, May 1, 2017 - Optical Society (The) (OSA)

We demonstrate the first electrically pumped quantum-dot micro-ring lasers epitaxially grown on (001) silicon. Continuous-wave lasing around 1.3 μm was achieved with ultra-low thresholds as small as 0.6 mA and maximum operation temperatures up to 100°.

GaSb lasers grown on Silicon substrate emitting in the telecom wavelength range
2016 Edition, June 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. We report the first GaSb-based laser monolithically grown on Silicon substrate working in CW mode at room temperature with an emission in the telecom wavelength range. We will present the laser design, Silicon ex-situ preparation,...

Electrically pumped continuous wave 1.3 µm quantum dot lasers epitaxially grown on on-axis (001) Si
2016 Edition, September 1, 2016 - Institute of Electronics, Information and Communication Engineers, The (IEIC)

We demonstrate 1.3 μm quantum dot lasers grown directly on (001) silicon substrates without offcut or germanium layers, with thresholds down to 30 mA and lasing up to 90°C. Measurements of relative intensity noise versus feedback show 20 dB higher tolerance to...

1-µm InAs quantum dot micro-disk lasers directly grown on exact (001) Si
2016 Edition, September 1, 2016 - Institute of Electronics, Information and Communication Engineers, The (IEIC)

Capitalizing on our novel epitaxial processes, we demonstrate subwavelength micro-disk lasers as small as 1 μm in diameter on exact (001) silicon substrates. Under continuous wave optical pumping at 10 K, low thresholds down to 35 μW were obtained...

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