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1.54 μm Monolithically Integrated GaSb Quantum Well Laser Diode on Silicon Operating at 77K
2007 Edition, July 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a GaSb quantum well laser diode grown monolithically on a Si(100)-5° substrate. The device lases under pulsed, 77 K conditions at 1.54 μm with threshold current density of 1 kA/cm2 for a 100 μm times 1 mm...

4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have developed 4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet (100GBASE-LR4) for the first time. Error-free transmission of 10-km on SMF under 100-Gbit/s (4×25-Gbit/s simultaneous) operation is demonstrated.

7.8-GHz Graphene-Based 2-μm Monolithic Waveguide Laser
2015 Edition, Volume 21, January 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report a pulsed waveguide laser working at 1944 nm, mode-locked with a saturable absorber consisting of a graphene film deposited on an output coupler mirror. The waveguide is created into a ceramic Thulium-doped Yttrium Aluminium Garnet by ultrafast laser inscription...

1.55 μm DFB laser monolithically integrated with 3-stage power amplifier array
2015 Edition, October 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 1.56 μm distributed feedback laser monolithically integrated with three stages of multi-mode interference couplers and semiconductor optical amplifiers was fabricated. The output exhibited a clear coherent interference far field pattern.

Room Temperature InGaSb Quantum Well Microcylinder Lasers at 2 μm Grown Monolithically on a Silicon Substrate
2006 Edition, October 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Room-temperature photopumped lasing operation near 2.0mum is reported from III-Sb microcylinders grown monolithically on silicon. High quality epitaxy is enabled by an interfacial misfit array. Growth, fabrication and device characterization is discussed

Direct bandgap GeSn microdisk lasers at 2.5 μm for monolithic integration on Si-platform
2015 Edition, December 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on the first experimental demonstration of direct bandgap group IV GeSn microdisk (MD) lasers (λem=2.5 μm) grown on Si(001). The evidence of lasing is supported by a detailed analysis of strain-dependent emission characteristics of GeSn alloys with xSn ≥ 12...

Cascade-gain-switching for generating 3.5-μm nanosecond pulses from monolithic fiber lasers
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We propose a novel laser configuration that can output 3.5-μm nanosecond laser pulses based on a simple and monolithic fiber structure. Cascade-gain-switching (CGS), which converts the wavelength of nanosecond pulses from 1.55 μm to 3.5 μm by two...

Monolithic 1.55-μm GaInNAsSb Quantum Well Mode-Locked Lasers
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The first monolithic GaInNAsSb/GaNAs 1550-nm mode-locked lasers are reported on a GaAs substrate. A repetition rate of 5.8 GHz has been realized.

Understanding the Bandwidth Limitations in Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we present measurements and simulations of the small-signal modulation response of monolithic continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) narrow ridge-waveguide lasers on a silicon substrate. The 2.5 mm-long lasers investigated...

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb
2015 Edition, Volume 21, November 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We describe how growth at low temperatures can enable increased active layer strain in GaSb-based type-I quantum-well diode lasers, with emphasis on extending the emission wavelength. Critical thickness and roughening limitations typically restrict...

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