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1.54 µm InAs/InP p-type doped quantum dash based DFB lasers for isolator free operation
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The tolerance to optical feedback of p-type doped InAs/InP quantum dash based DFB lasers is investigated. Optimized devices show a record −18 dB onset of coherence collapse compliant with 10 Gb/s Ethernet standard for...

Narrow linewidth 1.52 µm InAs/InP quantum dot DFB lasers
2011 Edition, May 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have grown, fabricated, and tested single mode ridge-waveguide distributed feedback lasers utilising InAs/InP quantum dots as the gain medium. The growth of quantum dots on InP substrates allows us to reach the important 1.55 µm telecommunications...

Single-mode 1.52 µm InAs/InP quantum dot DFB lasers
2011 Edition, March 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Single-mode InAs/InP quantum dot DFB lasers with side-mode suppression ratio greater than 62 dB are demonstrated, operating CW up to 80°C. Relative intensity noise was less than −153 dB/Hz from 1 MHz to 10 GHz.

Self-organized 1.55 µm InAs/InP quantum dot tube nanoscale coherent light sources
2011 Edition, January 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on the achievement of self-organized InAs/InP quantum dot tube nanoscale ring resonators, with a wall thickness of ∼70nm and diameter of ∼4-5µm, that can exhibit strong coherent emission at ∼1.55µm.

Thermal behavior of 1.55 µm (100) InAs/InP-based quantum dot lasers
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Unlike InAs/GaAs quantum dot lasers, in 1.55µm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (∼40K) and accounts for ∼94% of J th at room temperature with a T o of ∼72K from 220K-290K.

1.55-µm ultrashort pulse InAs/InP quantum dot mode-locked lasers with high output power
2016 Edition, June 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Summary form only given. We demonstrate an ultrashort pulse and high power single-section mode-locked laser using chirped multiple InAs /InP quantum dot (QD) layers as the active region of the laser. The chirped QD active region consists of seven layers of...

Improvement of 1.55 µm InAs QD laser using vicinal (001)InP substrate
2009 Edition, May 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present an improvement of threshold current density of InAs QD lasers emitting at 1.55µm on vicinal InP(001) substrate. High round shaped QDs density were achieved by combining the right off-cut direction of the InP(001) substrate with the optimized arsenic flux. A...

Observation of dynamics in a 5 GHz passively Mode-locked InAs/InP (100) Quantum Dot Ring Laser at 1.5 µm
2009 Edition, June 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper we present the first observation of passive mode-locking in a quantum dot (QD) ring laser operating at wavelengths around 1.5 µm. The InAs/InP QD laser structure is grown on n-type (100) InP substrates by metal-organic...

Correction to “Wavelength blue-shifting and gain spectral bandwidth of InAs/InP quantum dots for laser applications around 1.55 μm”
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Presents corrections to the paper, "Wavelength blue-shifting and gain spectral bandwidth of InAs/InP quantum dots for laser applications around 1.55 µm, (Xiong, Y. and Zhang, X.) IEEE J. Quantum Electronics, vol. 54, no. 1, 2000109, Feb...

Recent Developments in Quantum-Dot-Based Single-Photon Sources at Telecom Wavelengths
2018 Edition, July 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The fully secure communication systems require true single-photon sources (SPS) at wavelengths compatible with existing fibre networks. Nowadays, the efforts are especially devoted to improvement of quantum emitters' performances and realization of practical devices. In this contribution,...

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