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1.5 µm range InGaAsP/InP distributed feedback lasers
1982 Edition, Volume 18, August 1, 1982 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Lasing characteristics of InGaAsP/InP distributed feedback (DFB) lasers in the 1.5 μm range were studied theoretically and experimentally. Wave propagation in five-layer DFB waveguides were analyzed to estimate the effect of the structural parameters on...

Spectral linewidth estimation of a 1.5 µm range InGaAsP/InP distributed feedback laser
1986 Edition, Volume 22, March 1, 1986 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Spectral linewidth of a 1.5 μm range distributed feedback buried heterostructure (DFB-BH) laser in CW operation is estimated theoretically and experimentally. Considering the equivalent mirror facet loss coefficient and the confinement factor in the active layer, etc.,...

Correction to "1.5 µm range InGaAsP/InP distributed feedback lasers"
1983 Edition, Volume 19, December 1, 1983 - IEEE - Institute of Electrical and Electronics Engineers, Inc.
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Distributed feedback InGaAsP/InP lasers with window region emitting at 1.5 µm range
1983 Edition, Volume 19, June 1, 1983 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Distributed feedback (DFB) InGaAsP/InP lasers with a window region formed at an end of the corrugated DFB region were made in order to overcome the problems inherent in the previous structures of DFB lasers with cleaved, sawed, etched, or AR-coated facets,...

Single-mode operation over a wide temperature range in 1.3 /spl mu/m InGaAsP/InP distributed feedback lasers
1996 Edition, Volume 14, May 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An approach for single mode operation of 1.3 /spl mu/m distributed feedback (DFB) lasers with a large side mode suppression ratio over a wide temperature range of -40/spl deg/C to 100/spl deg/C, is reported. The lasers utilize an optimized strained-layer...

Monolithically integrated 10-channel-selectable light sources fabricated by SAG technology
2013 Edition, July 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A monolithic integration of ten 1.5-μm range InGaAsP/InP distributed feedback lasers with 10×1 multimode-interference (MMI) optical combiner using the selective area growth technology is proposed and demonstrated. Our design of selectable light...

Effect of mirror facets on lasing characteristics of distributed feedback InGaAsP/InP laser diodes at 1.5 µm range
1984 Edition, Volume 20, March 1, 1984 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The effect of mirror facets on lasing properties of distributed feedback (DFB) InGaAsP/InP laser diodes was studied theoretically and experimentally. A DFB laser with a window region was found to be suitable to examine the effect of mirror facets. The...

InGaAs/InGaAsP quantum well distributed feedback laser
1988 Edition, Volume 35, December 1, 1988 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The authors describe a deep 900-AA first-order grating that was fabricated on the top InGaAsP waveguide layer of a three-quantum-well separate-confinement heterostructure (SCH) wafer to provide for distributed-feedback (DFB) operation at 1.515 mu m. The SCH wafer was...

1.5-µm λ/4-shifted InGaAsP/InP DFB lasers
1987 Edition, Volume 5, November 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A single wavelength light source in 1.5-μm range was developed using InGaAsP/InP \lambda/4 -shifted distributed feedback (DFB) semiconductor heterostructures. Superiority of the \lambda/4 -shifted DFB structure in terms of stability of the main mode at the Bragg...

MOVPE-grown 1.5 µm distributed feedback lasers on corrugated InP substrates
1987 Edition, Volume 23, June 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A single-step low-pressure metalorganic vapor phase epitaxy (MOVPE) was applied to the fabrication of 1.5 μm InGaAsP/InP distributed feedback laser diodes on corrugated InP substrates, accompanied by LPE for buried heterostructure formation. High...

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