We show cascaded silicon microring resonators with 1.5-mum radius critically coupled to a narrower waveguide. A coupled Q of 9,000 is achieved. Devices are fabricated with the widely-available SEM-based lithography system using a stitching-free design.
We demonstrate as low as 3.88 plusmn 0.57 dB/cm propagation loss at telecom wavelengths in compact silicon microring resonators with small bending radii of 5 mum and a waveguide core cross-section of 500 nm times 250 nm.
We demonstrate compact silicon microring resonators suspended in air with ultra-high optical quality, achieving an intrinsic quality factor of 9.2×105 in the telecom band for the resonator with a radius of 9 μm.
We demonstrate a SOI slotted microring resonator using a multimode interferometer (MMI) coupler. We achieved high bandwidth of 0.25 nm, and a quality factor Q of ~6000 for rings with a radius of 20 μm.
We investigate silicon microring resonators embedded with Ge2Sb2Te5. The phase change is induced all optically by using a sequence of optical pulses. The tuning is non-volatile and repeatable, which can be employed for optical trimming.
We demonstrate a distortion free tunable delays as long as 72 ps with a 10 GHz bandwidth using thermally tuned silicon microring resonators. The device is compact measuring only 30 µm wide by 250 µm long.
We have demonstrated a polarization-diversi
An electro-optic device in silicon such as a photodetector and a modulator requires doping to realise desired junctions. Doping Si is typically done using ion-implantation or thermal diffusion process. Both the processes rely on hightemperature anneal to either activate or drive the dopant...
We propose an injection-type active silicon microring resonator using metal-oxide-semicond
Low-threshold lasing is achieved on compact hybrid silicon microring resonator devices (radii: 7.5, 12.5, 25 μm) through both optical and electrical pumping. The limiting factor in scaling down for sub-mA operation is the thermal impedance.