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λ/4-shifted InGaAsP/InP DFB lasers
1986 Edition, Volume 22, July 1, 1986 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

\lambda/4 -shifted InGaAsP/InP DFB lasers were studied theoretically and experimentally. The effect of reflectivities at the end of a DFB region and that of a \lambda/4 shift position were analyzed in terms of stability of...

Asymmetric λ/4-shifted InGaAsP/InP DFB lasers
1987 Edition, Volume 23, June 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

1.5 μm asymmetric \lambda/4 -shifted InGaAsP/InP DFB lasers, in which the \lambda/4 -shift position was moved from the center of the DFB region toward the front side, were made in order to obtain higher output power with high...

1.5-µm λ/4-shifted InGaAsP/InP DFB lasers
1987 Edition, Volume 5, November 1, 1987 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A single wavelength light source in 1.5-μm range was developed using InGaAsP/InP \lambda/4 -shifted distributed feedback (DFB) semiconductor heterostructures. Superiority of the \lambda/4 -shifted DFB structure in terms of stability of the...

Stability of the longitudinal mode in lambda /4-shifted InGaAsP/InP DFB lasers
1989 Edition, Volume 25, June 1, 1989 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Factors causing the mode stability of lambda /4-shifted distributed-feedback (DFB) lasers, spatial hole burning along the laser axis and residual reflectivity of the facets of laser cavity, are studied. It is experimentally and theoretically confirmed that...

Wavelength-selective receiver for simultaneous λ=1.3 µm and λ=1.55 µm RF optical transmission
2009 Edition, May 1, 2009 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We report on a dual-wavelength detector consisting of two stacked PIN-diodes with a common center terminal. The aspect of electrical and optical crosstalk in dependence of layer parameters is discussed and the RF-performance is investigated on fabricated devices up to 12GHz.

High-sensitivity 10Gbps Ge photoreceiver operating at λ ∼1.55 µm
2010 Edition, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a vertical-illumination-type 100% Ge-on-Si photodetector with the quantum efficiencies up to of 75.2% at λ∼1.55 µm and 96.4% at λ∼1.31 µm. The 10 Gbps photoreceiver with a fabricated 90 µm-diameter Ge photodetector exhibits the sensitivity of −18.5 dBm...

Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ∼1.55 µm
2011 Edition, March 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ∼1.55 µm. The 10Gbps photoreceiver with a fabricated 60 µm-diameter device exhibits high sensitivity of −19.5 dBm for λ∜1.55 µm.

Static and dynamic properties of InGaAsP-InP distributed feedback lasers-a detailed comparison between experiment and theory
1994 Edition, Volume 30, November 1, 1994 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have investigated the static and dynamic characteristics of phase shifted InGaAsP-InP DFB lasers mainly focusing on a comprehensive comparison between experimental results and numerical simulations. Experimental data of InGaAsP-InP mushroom type...

Wavelength tunable InGaAsP/InP multiple-/spl lambda//4-shifted distributed feedback laser
1992 Edition, January 1, 1992 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A tunable InGaAsP/InP multiple /spl lambda//4-shifted DFB laser is demonstrated. Continuous wavelength tuning was obtained with a range of 1.7nm. Low spectral linewidth and flat FM response with 0.65GHz/mA efficiency is also presented.

Wavelength-tunable InGaAsP-InP multiple- lambda /4-shifted distributed feedback laser
1993 Edition, Volume 29, June 1, 1993 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A wavelength-tunable InGaAsP/InP multiple- lambda /4-shifted distributed-feedback (MQS-DFB) laser was demonstrated for the first time. A DFB laser with three lambda /4 shifts and five electrodes was fabricated, and its...

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