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A room temperature electrically pumped 1.3-µm InAs quantum dot laser monolithically grown on silicon substrates
2011 Edition, September 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a room-temperature 1.3-µm InAs/GaAs quantum dot laser monolithically grown on Si(100). The threshold current at 20°C was 725A/cm2 and the emission wavelength was 1.302µm. The laser was operated in pulsed mode. The growth was enabled via the optimisation...

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-well Mid-wave Infrared Photodetectors Grown on Silicon Substrate
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work, we demonstrate the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved...

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
2018 Edition, Volume 36, July 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors....

Dot state properties of 1.3 µm low-loss InAs quantum dot lasers grown directly on Si
2016 Edition, September 1, 2016 - Institute of Electronics, Information and Communication Engineers, The (IEIC)

In the first comparison of identical 1.3μm InAs/AlGaAs quantum-dot structures grown on silicon (with defect filter layers, but no germanium) and GaAs substrates, both demonstrate dot-state emission of similar intensity, spectral breadth and...

Midwave Infrared Quantum Dot Quantum Cascade Photodetector Monolithically Grown on Silicon Substrate
2018 Edition, Volume 36, September 15, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Mid-infrared photodetector based on submonolayer (SML) quantum dot quantum cascade structure monolithically grown on silicon substrate has been demonstrated in this paper. Both the optical and electrical characteristics of the SML...

1.3µm InAs quantum dots grown on silicon substrate
2010 Edition, July 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The self-assembled InAs quantum dots (QDs) on Si substrate with high density (7.5×1010 cm−2) were achieved using relatively lower growth temperature by low-pressure metal-organic chemical vapor deposition. The PL spectra exhibit 1.3µm emission from InAs...

Pulse Timing and Amplitude Stability of a Monolithic Passively Mode-Locked Quantum Dot Laser at 1310 nm Directly Grown on Silicon
2019 Edition, June 1, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Passively mode-locked (PML) InAs/InGaAs quantum dot (QD) lasers directly grown on silicon and emitting at 1310nm are promising sources for high-speed, high-capacity communication applications. To overcome the low light generation efficiency of...

Monolithically grown superluminescent diodes on germanium and silicon substrates
2015 Edition, May 1, 2015 - Optical Society (The) (OSA)

We demonstrate the first InAs/GaAs quantum-dot (QD) superluminescent diode (SLD) monolithically grown on both Ge and Si substrates by molecular beam epitaxy. The QD SLDs on Ge substrates exhibit a 3 dB emission bandwidth of ~60 nm with output...

InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
2013 Edition, Volume 19, July 1, 2013 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The realization of semiconductor lasers on Si substrates will enable the fabrication of complex optoelectronic circuits. This will permit the creation of the long-dreamed chip-to-chip and system-to-system optical interconnects. This paper reports recent developments in our work...

Dark Current Analysis of Mid-Wave Quantum Dots-in-a-Well Photodetectors Monolithically Grown on Silicon Substrate
2018 Edition, October 1, 2018 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this work, we analyze the dark current performance of the InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) mid-wave infrared photodetectors monolithically grown on silicon substrate.

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