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Low-K/Cu CMOS-based SoC technology with 115-GHz f/sub T/, 100-GHz f/sub max/, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor
2006 Edition, Volume 19, August 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz fmax, and sub-1.0-dB NFmin at 10 GHz have been...

0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX
2003 Edition, October 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Superior RF CMOS of 115GHz fT and 80GHz fmax has been realized by 0.13 μm low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at 10GHz is...

Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz f/sub T/, 80 GHz f/sub MAX/ RF CMOS, high-Q MiM capacitor and spiral Cu inductor
2003 Edition, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

For the first time, foundry CMOS logic based RF technology is introduced for 10 Gb/s transceiver in which active and passive RF elements have been realized in a single chip. Superior RF CMOS of 115 GHz f/sub r/, 80 GHz f/sub MAX/,...

A 45nm low power system-on-chip technology with dual gate (logic and I/O) high-k/metal gate strained silicon transistors
2008 Edition, December 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V...

The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks
2006 Edition, Volume 41, August 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper provides evidence that, as a result of constant-field scaling, the peak fT (approx. 0.3 mA/mum), peak fMAX (approx. 0.2 mA/mum), and optimum noise figure NFMIN (approx. 0.15 mA/mum) current densities of Si and SOI n-channel MOSFETs are largely unchanged over...

P1838_D2.0, Aug 2019 - IEEE Draft Standard for Test Access Architecture for Three-Dimensional Stacked Integrated Circuits
2019 Edition, September 9, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

IEEE Std 1838 is a die-centric standard; it applies to a die that is intended to be part of a multi-die stack. The proposed standard defines die-level features that, when compliant dies are brought together in a stack, comprise a stack-level architecture that enables transportation of control...

P1076/D13, Jul 2019 - IEEE Approved Draft Standard for VHDL Language Reference Manual
2019 Edition, September 3, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

VHSIC Hardware Description Language (VHDL) is defined. VHDL is a formal notation intended for use in all phases of the creation of electronic systems. Because it is both machine readable and human readable, it supports the development, verification, synthesis, and testing of hardware...

P802.22/D8.0.0, Jul 2019 - IEEE Approved Draft Standard for Information Technology - Local and Metropolitan Area Networks - Specific Requirements - Part 22: Cognitive Radio Wireless Regional Area Networks (WRAN) Medium Access Control (MAC) and Physical Layer (PHY) Specifications: Policies and Procedures for Operation in the Bands that Allow Spectrum Sharing where the Communications Devices may Opportunistically Operate in the Spectrum of the Primary Service
2019 Edition, September 3, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This standard specifies the air interface, including the cognitive medium access control layer (MAC) and physical layer (PHY), of point-to-multipoint wireless regional area networks comprised of a professional fixed base station with fixed and portable user terminals...

P2030.2.1/D10.0, Feb 2019 - IEEE Approved Draft Guide for Design, Operation, and Maintenance of Battery Energy Storage Systems, both Stationary and Mobile, and Applications Integrated with Electric Power Systems
2019 Edition, September 3, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This standard applies to: (1) Stationary battery energy storage system (BESS) and 1 mobile BESS. (2) Carrier of BESS, mainly includes but not limited to lead acid battery, lithium-ion battery, flow battery and sodium-sulfur battery; (3) BESS used in electric power system (EPS). This...

C57.13.7-2018 - IEEE Standard for Current Transformers with Maximum Milliampere Secondary Current of 250 mA
2019 Edition, August 30, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Milliampere-range current transformers (CTs) are not addressed in the scope of IEEE Std C57.13-2016. The evaluation, certification, and specification of milliampere CTs is enabled in this standard similar to the present process available for 5-A secondary output CTs.

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