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0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor
1997 Edition, Volume 18, June 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The fabrication and performance of ultra-high-speed 0.3-/spl mu/m gate-length enhancement-mode high-electron-mobility transistors (E-HEMT's) are reported. By using a buried platinum-gate technology and incorporating an etch-stop...

160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The development of the enhancement-mode high electron mobility transistor (E-HEMT) lattice matched to InP is of considerable interest in the area of low power, high speed communications. Circuits which employ both E-mode devices and...

Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors
1996 Edition, January 1, 1996 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/lnP material system is reported for gate lengths ranging from 0.3...

Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications
1998 Edition, Volume 45, January 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) on InAlAs/InGaAs/InP is reported. The E-HEMTs with a 1.0-/spl mu/m gate length exhibit a threshold...

Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors
1997 Edition, Volume 18, August 1, 1997 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The fabrication and characterization of an 11-stage ring oscillator utilizing integrated enhancement- and depletion-mode (E/D-mode) high-electron mobility transistors (HEMT's) in the lattice-matched InAlAs/InGaAs/InGaAs material...

Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP
1998 Edition, Volume 45, December 1, 1998 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The fabrication and characterization of high-speed enhancement-mode InAlAs/InGaAs/InP high electron mobility transistors (E-HEMTs) have been performed. The E-HEMT devices were made using a buried-Pt gate technology....

InP-based enhancement-mode pseudomorphic HEMT with strained In/sub 0.45/Al/sub 0.55/As barrier and In/sub 0.75/Ga/sub 0.25/As channel layers
2000 Edition, Volume 21, May 1, 2000 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Using strained aluminum-rich In/sub 0.45/Al/sub 0.55/As as Schottky contact materials to enhance the barrier height and indium-rich In/sub 0.75/Ga/sub 0.25/As as channel material to enhance the channel performance, we have developed InP-based enhancement-mode...

Extremely High gm> 2.2 S/mm and fT> 550 GHz in 30-nm Enhancement-Mode InP-HEMTs with Pt/Mo/Ti/Pt/Au Buried Gate
2007 Edition, May 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We have successfully developed 30-nm enhancement-mode (E-mode) InGaAs/InAlAs high electron mobility transistors (HEMTs) with an extremely high transconductance (gm ) of 2.22 S/mm, a current gain cutoff frequency (fT) of 554 GHz,...

Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs/InAlAs high-electron mobility transistors
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper, we investigated the impact of the source-to-drain spacing (LSD) on the DC and high-frequency characteristics of indium-rich In0.8Ga0.2As/In0.52Al0.48As high-electron mobility transistors (HEMTs) on a 3-inch InP substrate. Lg = 87 nm...

Cryogenic Kink Effect in InP pHEMTs: A Pulsed Measurements Study
2015 Edition, Volume 62, February 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

We present a study based on pulsed measurement results of the kink effect observed on the I-V output characteristics in InGaAs/InAlAs/InP pseudomorphic high-electron mobility transistors (InP pHEMTs) at cryogenic temperatures. Pulsed...

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