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0.13-μm SiGe BiCMOS technology with More-than-Moore modules
2017 Edition, October 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents three different technology modules, integrated into a 0.13-μm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave...

A W-band LNA in 0.18-μm SiGe BiCMOS
2010 Edition, May 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents the design and implementation of a W-band LNA. Fabricated in a 0.18-μm SiGe BiCMOS technology, the five-stage LNA achieves a peak power gain of 19 dB with a 3-dB bandwidth from 70-97 GHz and a minimum noise figure of 9 dB. The LNA exhibits more than 10-dB...

Design of 60-GHz LNA in 0.13-μm SiGe BiCMOS
2008 Edition, April 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure, a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe...

A 0.35 μm SiGe BiCMOS technology for power amplifier applications
2007 Edition, September 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm...

A fully integrated 0.18 μm SiGe BiCMOS power amplifier
2015 Edition, November 1, 2015 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A fully integrated class AB power amplifier (PA) for 900MHz front end IC integration is presented. The PA is implemented in a two-stage single-ended structure and is designed in HHGrace 0.18μm SiGe BiCMOS process. This PA is designed in fully integrated style without any...

A novel dual-SCR ESD protection structure in 0.35-μm SiGe BiCMOS process
2016 Edition, May 1, 2016 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents a novel dual silicon controlled rectifier (SCR) with silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.35-μm SiGe BiCMOS process. This device includes two back-to-back HBTs with shared sub-collector. Two resistors are connected parallel...

High Performance, Low Complexity Vertical PNP BJT Optimization for a 0.24 μm SiGe BiCMOS Technology
2007 Edition, January 1, 2007 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

An isolated vertical PNP BJT with fT of 28 GHz and f MAX of 26 GHz available as a modular component in a 0.24 μm SiGe BiCMOS technology is described. This paper presents, to the authors' knowledge, the highest fT ever published for a homojunction PNP device, as well as...

Recent fully differential amplifier in 0.35 μm SiGe BiCMOS technology for UWB applications
2011 Edition, April 1, 2011 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

The paper deals with the recent developments of a differential amplifier designed in 0.35 μm SiGe BiCMOS technology from Austriamicrosystems, Austria (AMS). The amplifier is a part of the manufactured chip, which also contains a pair of low noise amplifiers and digital...

240 GHz RF-MEMS switch in a 0.13 μm SiGe BiCMOS Technology
2017 Edition, October 1, 2017 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper presents an RF-MEMS switch fabricated in a 0.13 μm SiGe BiCMOS process technology for 240 GHz applications. The fabricated RF-MEMS switch provides a high capacitance C on /C off ratio of 8.78 and beyond state of the art RF performances, 0.44 dB of...

A 0.13-μm SiGe BiCMOS LNA for 24-GHz automotive short-range radar
2008 Edition, October 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

In this paper a 24-GHz low-noise amplifier for automotive short-range radar applications is presented. The circuit was fabricated in a 0.13-μm SiGe BiCMOS process and includes three fully differential transformer-loaded cascode stages with variable gain functionality....

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