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0.13 μm Low Voltage Logic Based RF CMOS Technology with 115GHz fT and 80GHz fMAX
2003 Edition, October 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Superior RF CMOS of 115GHz fT and 80GHz fmax has been realized by 0.13 μm low voltage logic based RF CMOS technology by aggressive device scaling and optimized layout. NFmin of 2.2dB at...

Low-K/Cu CMOS-based SoC technology with 115-GHz f/sub T/, 100-GHz f/sub max/, low noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor
2006 Edition, Volume 19, August 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz fT, 100-GHz fmax, and sub-1.0-dB NFmin at 10 GHz have been...

14-nm FinFET Technology for Analog and RF Applications
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper describes the features and performance of an analog and RF device technology development on a 14-nm logic FinFET platform. An optimized single-side gate contact RF device layout shows a Ft/Fmax of 314/180 GHz and 285/140 GHz...

A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f $_{T} $ /f $_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
2010 Edition, Volume 45, September 1, 2010 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A 0.13 μm SiGe BiCMOS technology for millimeter-wave applications is presented. This technology features high-speed HBTs with peak transit frequencies fT of 240 GHz, maximum oscillation frequencies fmax of 330 GHz, and breakdown voltages BVCEO...

Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz f/sub T/, 80 GHz f/sub MAX/ RF CMOS, high-Q MiM capacitor and spiral Cu inductor
2003 Edition, January 1, 2003 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

For the first time, foundry CMOS logic based RF technology is introduced for 10 Gb/s transceiver in which active and passive RF elements have been realized in a single chip. Superior RF CMOS of 115 GHz f/sub r/, 80 GHz f/sub MAX/,...

A 45nm low power system-on-chip technology with dual gate (logic and I/O) high-k/metal gate strained silicon transistors
2008 Edition, December 1, 2008 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

A leading edge 45 nm CMOS system-on-chip (SOC) technology using Hafnium-based high-k/metal gate transistors has been optimized for low power products. PMOS/NMOS logic transistor drive currents of 0.86/1.08 mA/um, respectively, have been achieved at 1.1 V...

A Temperature Compensated RF LC Clock Generator With ±50-ppm Frequency Accuracy From -40 °C to 80 °C
Volume PP - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This article presents the crystal-less CMOS frequency reference circuit that is suitable for connectivity applications with a relaxed frequency drift requirement. The presented architecture exploits the open-loop LC oscillator while ensuring constant bias condition,...

The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks
2006 Edition, Volume 41, August 1, 2006 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

This paper provides evidence that, as a result of constant-field scaling, the peak fT (approx. 0.3 mA/mum), peak fMAX (approx. 0.2 mA/mum), and optimum noise figure NFMIN (approx. 0.15 mA/mum) current densities of Si and SOI n-channel MOSFETs are largely unchanged over...

P2790/D4.0, Aug 2019 - IEEE Draft Standard for Biometric Liveness Detection
2019 Edition, November 19, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Biometric lifeless attack is one of the indispensable issue within biometric authentication. There are 3 major components in liveness detection system: lifeless attack presentation, liveness detection, and lifeless attack instrument. The lifeless attack presentation is divided into artifact...

C57.13.5 - IEEE Approved Draft Standard of Performance and Test Requirements for Instrument Transformers of a Nominal System Voltage of 115 kV and Above
2019 Edition, November 7, 2019 - IEEE - Institute of Electrical and Electronics Engineers, Inc.

Single-phase instrument transformers of a nominal system voltage of 115 kV and above with capacitive insulation system for line-to-ground connection and for both indoor and outdoor application is discussed in this standard. This standard is intended for use as a...

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