Preface
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hiroki Hamada
Year: 2015
Document Type:
Acknowledgements
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
[4 awards - various topics]
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Display innovations through glass
Publisher: Japan Society of Applied Physics - JSAP
Authors:Lori Hamilton
Year: 2015
Document Type:
Outlook of solar PV technology: From material to system
Publisher: Japan Society of Applied Physics - JSAP
Authors:Michio Kondo
Year: 2015
Document Type:
Principles and possible system-on-wafer applications of SSI-LEDs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yue Kuo
Year: 2015
Document Type:
Flexible substrates and non-ITO transparent electrodes for organic electronics
Publisher: Japan Society of Applied Physics - JSAP
Authors:Mitsuhiro Koden
Year: 2015
Document Type:
The impurity effects on OLEDs via transient electroluminescence analysis
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chi-Feng Lin; Guan-Ting Lin; Chia-Cheng Jian
Year: 2015
Document Type:
Nonvolatile memory performances of transparent and/or flexible memory thin-film transistors using IGZO channel and ZnO charge-trap layers
Publisher: Japan Society of Applied Physics - JSAP
Authors:So-Jung Kim; Won-Ho Lee; Sung-Min Yoon
Year: 2015
Document Type:
Various approaches for high performance and stable oxide thin-film transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yeong-gyu Kim; Jae Won Na; Won-Gi Kim; Hyun Jae Kim
Year: 2015
Document Type:
Threshold voltage shifts in top-gate Al-doped ZnO TFTs by adjusting the position of Al dopant layer during the atomic-layer deposition process
Publisher: Japan Society of Applied Physics - JSAP
Authors:Eom-Ji Kim; Sung-Min Yoon
Year: 2015
Document Type:
Improvement in performance of solution processed indium-zinc-tin oxide thin film transistors by using UV Ozone treatment on zirconium oxide gate insulator
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ravindra Naik Bukke; Christophe Avis; Taehun Kim; Jin Jang
Year: 2015
Document Type:
Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays
Publisher: Japan Society of Applied Physics - JSAP
Authors:Bahman Hekmatshoar
Year: 2015
Document Type:
Low temperature processes for metal-oxide thin film transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Norbert Fruehauf; Marcus Herrmann; Holger Baur; Mehadi Aman
Year: 2015
Document Type:
Nitride devices prepared on flexible substrates
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hiroshi Fujioka; K. Ueno; A. Kobayashi; Jituo Ohta
Year: 2015
Document Type:
Synthesis and functionalization of two-dimensional materials: Graphene, hexagonal boron nitride, and transition metal dichalcogenides
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hiroki Hibino; Shengnan Wang; Carlo M. Orofeo; Satoru Suzuki
Year: 2015
Document Type:
Synthesis of flexible graphene transparent conductive films by using plasma technique
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masataka Hasegawa; Ryuichi Kato; Yuki Okigawa; Satoshi Minami; Masatou Ishihara; Takatoshi Yamada
Year: 2015
Document Type:
Graphene/transition metal dichalcogenide/metal vertical heterostructure transistor with large current ON/OFF ratio
Publisher: Japan Society of Applied Physics - JSAP
Authors:Rai Moriya; Yohta Sata; Takehiro Yamaguchi; Yoshihisa Inoue; Naoto Yabuki; Sei Morikawa; Satoru Masubuchi; Tomoki Machida
Year: 2015
Document Type:
Theoretical and experimental study of earth-abundant solar cell materials
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yanfa Yan; W.-J Yin; T. Shi; F. Hong; J. Ge; Y. Yue; W. Ke; D. Zhao; A. Cimaroli
Year: 2015
Document Type:
Plasmonic and metal oxide systems for high performance OLEDs and OPVs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wallace C. H. Choy
Year: 2015
Document Type:
Efficiency improvement of current gain in organic up-conversion devices by maintaining hole blocking property at interface of anode/charge generation layer
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ya-Ze Li; Shao-Yu Lin; Tsung-Hao Su; Shun-Wei Liu; Chih-Chien Lee
Year: 2015
Document Type:
All-optically controllable scattering mode light modulator based on azobenzene liquid crystals and poly(N-vinylcarbazole) films
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yen-Chen Liu; Ko-Ting Cheng; Yuan-Di Chen; Andy Ying-Guey Fuh
Year: 2015
Document Type:
Improving the efficiency of white OLEDs based on a gradient refractive index substrate
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chih-Hao Chang; Tzu-Fang Chang; Yu-Jhong Lo; Yi-Hua Liang; Ying-Jie Wu; Hsin-Hua Chang
Year: 2015
Document Type:
Production of efficient exciplex-based red, green, blue and white organic light-emitting diodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chih-Hao Chang; Szu-Wei Wu; Sung-En Lin; Chih-Wei Huang; Chung-Tsung Hsieh; Nien-Po Chen; Hsin-Hua Chang
Year: 2015
Document Type:
Electron-transporting layer effects on blue phosphorescent organic light-emitting diodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tzu-Chan Lin; Tien-Lung Chiu
Year: 2015
Document Type:
Using carbazole-triazole derives host in blue phosphorescent OLEDs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yu-Hsiang Hung; Tien-Lung Chiu
Year: 2015
Document Type:
Strong light of red up-conversion in a ZnO-TiO2 composite containing Er3+ and Yb3+
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keito Ohyama; Toshihiro Nonaka; Tsubasa Kanamori; Shin-Ichi Yamamoto
Year: 2015
Document Type:
Luminescence characterization of LaOF:Yb3+/Er3+ up-conversion phosphor
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keito Ohyama; Toshihiro Nonaka; Shin-Ichi Yamamoto
Year: 2015
Document Type:
Optical properties of distributed inorganic EL devices with multi-stripe electrode
Publisher: Japan Society of Applied Physics - JSAP
Authors:Toshihiro Nonaka; Shin-Ichi Yamamoto
Year: 2015
Document Type:
Modeling for carrier transportation in organic light-emitting diode by considering effective tail states
Publisher: Japan Society of Applied Physics - JSAP
Authors:I-Hsin Lu; Yuh-Renn Wu
Year: 2015
Document Type:
Study on hydrogenation after BLDA in Si TFT with metal source/drain
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kiyoharu Shimoda; Takuya Ashitomi; Tatsuya Okada; Takashi Noguchi; Osamu Nishikata; Atsushi Ota
Year: 2015
Document Type:
Improvement of poly-Ge TFT characteristics by atomic hydrogen annealing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Akira Heya; Shota Hirano; Naoto Matsuo
Year: 2015
Document Type:
A novel Double-Gate Thin-Film Transistors with split-gate and RSD design
Publisher: Japan Society of Applied Physics - JSAP
Authors:Cheng-Hao You; Xian-Zhi Chen; Feng-Tso Chien
Year: 2015
Document Type:
Effects of over-etching time on the characteristics of amorphous IGZO thin-film transistors with back-channel-etch structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:Guoying Wang; Zhen Song; Xiang Xiao; Shengdong Zhang
Year: 2015
Document Type:
Fully-transparent Mo-doped ZnO TFTs fabricated in different oxygen partial pressure at low temperature
Publisher: Japan Society of Applied Physics - JSAP
Authors:Pan Shi; Dedong Han; Yi Zhang; Wen Yu; Lingling Huang; Yingying Cong; Xiaoliang Zhou; Zhuofa Chen; Junchen Dong; Shengdong Zhang; Xing Zhang; Yi Wang
Year: 2015
Document Type:
Bending performance and bias-stress stability of the In-Ga-Zn-O TFTs prepared on flexible PEN substrates with optimum barrier structures
Publisher: Japan Society of Applied Physics - JSAP
Authors:Min-Ji Park; Da-Jung Yun; Min-Ki Ryu; Jong-Heon Yang; Jae-Eun Pi; Gi-Hyun Kim; Chi-Sun Hwang; Sung-Min Yoon
Year: 2015
Document Type:
A study on corbino a-IGZO TFTs with different bending curvatures for flexible electronics
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wan-Chen Huang; Shuo-Yang Sun; Chun-Cheng Cheng; Chu-Yu Liu; Min-Feng Chiang
Year: 2015
Document Type:
Effect of top gate bias on NBIS in dual gate a-IGZO TFTs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Eunji Lee; Md Delwar Hossain Chowdhury; Jin Jang
Year: 2015
Document Type:
Fabrication of thienoacene-based Organic Thin-Film Transistors with various interfacial layers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Safizan Binti Shaari; Shigeki Naka; Hiroyuki Okada
Year: 2015
Document Type:
P-channel oxide thin film transistors using sol-gel solution processed nickel oxide
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tengda Lin; Xiuling Li; Jin Jang
Year: 2015
Document Type:
Evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O analyzed by photoelectron emission yield experiments
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kazushi Hayashi; Aya Hino; Hiroaki Tao; Mototaka Ochi; Hiroshi Goto; Toshihiro Kugimiya
Year: 2015
Document Type:
Air-stable N-type organic microribbon transistors based on perylene diimides derivatives
Publisher: Japan Society of Applied Physics - JSAP
Authors:Pin-Yen Tseng; Gen-Wen Hsieh; Cheng-Wei Wang; Chun-Yi Hung; Chih-Wen Tsai
Year: 2015
Document Type:
Hybrid-type temperature sensor using thin-film transistors generating rectangle output waveform
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hisashi Hayashi; Katsuya Kito; Shuhei Kitajima; Tokiyoshi Matsuda; Mutsumi Kimura
Year: 2015
Document Type:
Temperature and illuminance detections by hybrid-type carrier-generation sensors using n-type and p-type poly-Si TFTs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Katsuya Kito; Hisashi Hayashi; Shuhei Kitajima; Tokiyoshi Matsuda; Mutsumi Kimura
Year: 2015
Document Type:
Frequency modulation-type capacitance sensor using amorphous In-Ga-Zn-O thin-film transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yuki Koga; Tokiyoshi Matsuda; Mamoru Furuta; Mutsumi Kimura
Year: 2015
Document Type:
Improvement of learning efficiency in neural network using poly-Si TFTs by synapse TFTs with LDD structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ryohei Morita; Yoshiharu Maeda; Tokiyoshi Matsuda; Mutsumi Kimura
Year: 2015
Document Type:
Quasi-single crystal SiGe on insulator by Au-induced crystallization for flexible electronics
Publisher: Japan Society of Applied Physics - JSAP
Authors:Taizoh Sadoh; Jong-Hyeok Park; Rikuta Aoki; Masanobu Miyao
Year: 2015
Document Type:
The influence of annealing temperature and film thickness on crystallization behaviors of IGZO thin films
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jaeseung Jo; JaeYu Cho; Hee Kyeung Hong; Sungman Kim; Jehun Lee; JunHyung Lim; Junho Song; Jin Hyeok Kim; Jaeyeong Heo
Year: 2015
Document Type:
Effects of deposition inclination angle on the mechanical, optical and electrical characteristics of Al-doped ZnO films
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tse-Chang Li; Jen-Fin Lin
Year: 2015
Document Type:
Molecular alignment control of pentacene molecules deposited on a photocrosslinkable liquid-crystalline polymer film with various thicknesses
Publisher: Japan Society of Applied Physics - JSAP
Authors:Mizuho Kondo; Takao Nakanishi; Akira Heya; Naoto Matsuo; Nobuhiro Kawatsuki
Year: 2015
Document Type:
All-solid-state electrochromic thin films for optical iris application
Publisher: Japan Society of Applied Physics - JSAP
Authors:Min-Chuan Wang; Ming-Hao Hsieh; Wei-Hsiu Hsu; Wen-Fa Tsai; Der-Jun Jan
Year: 2015
Document Type:
Improvements of dot-size uniformity of the columnar InGaAs quantum dot structures with GaAs(Sb)/AlGaAsSb composite layers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wei-Sheng Liu; Hsiao-Chien Lin; Ren-Yo Liu; Min Wu
Year: 2015
Document Type:
Application of luminescence technology for solar PV industry
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shih-Hung Lin; Tzu-Huan Cheng
Year: 2015
Document Type:
Lifetime study of Dye sensitized solar cells
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chi-Feng Lin; Wei-Gang Huang; Pin-Hung Chen; Jerry-Ho Kung
Year: 2015
Document Type:
Dye sensitized solar cells with carbon black as counter electrodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chi-Feng Lin; Yu-Chen Chou; Jhang-Fu Haung; Pin-Hung Chen; Hsieh-Cheng Han
Year: 2015
Document Type:
Efficiency enhancement of top-incident organic photovoltaics using multiple reflection design for exhausting incident photons
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tien-Lung Chiu; Mi Zhang; Chia-Hsun Chen
Year: 2015
Document Type:
Boron subphthalocyanine-based organic photovoltaic device with record high open circuit voltage
Publisher: Japan Society of Applied Physics - JSAP
Authors:Po-Sheng Wang; Cheng-Chieh Lee; Jiun-Haw Lee; Lee-Yih Wang; Chi-Feng Lin; Tien-Lung Chiu
Year: 2015
Document Type:
A novel donor-acceptor-acceptor molecular for planar mix heterojunction C60 based organic solar cells
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ya-Ting Yang; Chia-Hsun Chen; Hao-Chun Ting; Ken-Tsung Wong; Tien-Lung Chiu; Chi-Feng Lin; Jiun-Haw Lee
Year: 2015
Document Type:
Hydrothermal synthesis of Eu3+-doped NaYF4 downconversion materials for silicon-based solar cells applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chien-Wei Liu; Chin-Lung Cheng; Jung-Yen Yang
Year: 2015
Document Type:
Annihilation properties of photo-induced carrier in silicon pn junction
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masahiko Hasumi; Toshiyuki Sameshima; Takayuki Motoki; Tomohiko Nakamura; Tomohisa Mizuno
Year: 2015
Document Type:
Reduction in optical reflection loss at intermediate adhesive layer for mechanical stacked multi-junction solar cells
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shunsuke Kimura; Shinya Yoshidomi; Masahiko Hasumi; Toshiyuki Sameshima
Year: 2015
Document Type:
Zn(O,S) buffer layers grown by atomic layer deposition in Cu2ZnSn(S,Se)4 thin film solar cells
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hee Kyeung Hong; In Young Kim; Hui Kyung Park; Jaeseung Jo; Gwang Yeom Song; Jin Hyeok Kim; Jaeyeong Heo
Year: 2015
Document Type:
A wide absorption donor-acceptor active layer for vacuum-deposited organic photovoltaic devices with a 6.8 % power conversion efficiency
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ya-Ze Li; Tsung-Hao Su; Chun-Kai Wang; Ken-Tsung Wong; Shun-Wei Liu
Year: 2015
Document Type:
Flexible displays using c-axis-aligned-crystal oxide semiconductors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Junichi Koezuka; Kenichi Okazaki; Satoru Idojiri; Yukinori Shima; Kei Takahashi; Daiki Nakamura; Shunpei Yamazaki
Year: 2015
Document Type:
Ultra-low power reflective LCD technology and its application for wearable devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yoko Fukunaga; Takehiro Shima; Takayuki Nakao; Yasuyuki Teranishi; Yoshiharu Nakajima
Year: 2015
Document Type:
Heat treatment in 110°C liquid water used for passivating silicon surfaces
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tomohiko Nakamura; Takayuki Motoki; Toshiyuki Sameshima; Masahiko Hasumi; Tomohisa Mizuno
Year: 2015
Document Type:
Nanocrystallized CdS for detection of UV light with picowatt sensitivity through single shot KrF laser treatment
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keng-Te Lin; Hsuen-Li Chen; Yu-Lun Liu; Yi-Chuan Tseng; Cheng-Hsi Lin; Ho-Ming Chang; Jui-Min Liu; Yu-Sheng Lai
Year: 2015
Document Type:
Cobalt derivatives as counter electrodes in dye sensitized solar cells
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chi-Feng Lin; Pin-Hung Chen; Ting-Hsuan Hsieh; Hsieh-Cheng Han; Kuo-Yuan Chiu
Year: 2015
Document Type:
Temperature dependences of conductivity in undoped and doped poly-Si thin films grown on YSZ crystallization-induction layers by two-step irradiation method with pulsed laser
Publisher: Japan Society of Applied Physics - JSAP
Authors:Mai Lien Thi Kieu; Susumu Horita
Year: 2015
Document Type:
Low-temperature metal double-gate junctionless p-channel polycrystalline-germanium thin-film transistors with high-k gate dielectric on glass substrate
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yuya Nishimura; Shota Nibe; Akito Hara
Year: 2015
Document Type:
Doping stability and opto-electronic performance of chemical vapour deposited graphene for plastic electronic applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. H. Kang; W. I. Milne; M. T. Cole
Year: 2015
Document Type:
A combinatorial device analysis method of oxide thin-film transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sanghun Jeon
Year: 2015
Document Type:
Unseeded growth of poly-crystalline Ge with (111) surface orientation on insulator by pulsed green laser annealing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masahiro Horita; Toru Takao; Yoshiaki Nieda; Yasuaki Ishikawa; Nobuo Sasaki; Yukiharu Uraoka
Year: 2015
Document Type:
Prospects of oxide TFTs approaching LTPS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kwon-Shik Park; Saeroonter Oh; Pilsang Yun; Jong Uk Bae; In Byeong Kang
Year: 2015
Document Type:
Suppression of positive gate bias temperature stress and negative gate bias illumination stress induced degradations by fluorine-passivated In-Ga-Zn-O thin-film transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Dapeng Wang; Jingxin Jiang; Mamoru Furuta
Year: 2015
Document Type:
Analysis of self-heating phenomenon in oxide thin-film transistors under pulsed bias voltage
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kahori Kise; Shigekazu Tomai; Haruka Yamazaki; Satoshi Urakawa; Koki Yano; Dapeng Wang; Mamoru Furuta; Masahiro Horita; Mami Fujii; Yasuaki Ishikawa; Yukiharu Uraoka
Year: 2015
Document Type:
Controllability of self-aligned four-terminal planar embedded metal double-gate low-temperature polycrystalline-silicon thin-film transistors on glass substrate
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hiroki Ohsawa; Shun Sasaki; Akito Hara
Year: 2015
Document Type:
Author index
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Committees
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Foreword
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Acknowledgment
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Executive committees
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Program at a glance
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Session quick index
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Embedded image recognition systems for advanced safety vehicles
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masayuki Takemura; Takeshi Shima; Shoji Muramatsu
Year: 2015
Document Type:
High-level video analytics PC subsystem using SoC with heterogeneous multi-core architecture
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yukihiro Sasagawa; Atsuhiro Mori
Year: 2015
Document Type:
A throughput-agnostic 11.9–13.6GOPS/mW multi-signal classification SoC for cognitive radios in 40nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Fang-Li Yuan; Rakesh Kumar Palani; Sina Basir-Kazeruni; Hundo Shih; Anindya Saha; Ramesh Harjani; Dejan Markovic
Year: 2015
Document Type:
A multi-chip system optimized for insect-scale flapping-wing robots
Publisher: Japan Society of Applied Physics - JSAP
Authors:Xuan Zhang; Mario Lok; Tao Tong; Simon Chaput; Sae Kyu Lee; Brandon Reagen; Hyunkwang Lee; David Brooks; Gu-Yeon Wei
Year: 2015
Document Type:
Sensor-hub sweet-spot analysis for ultra-low-power always-on operation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Adam Fuks
Year: 2015
Document Type:
A 25GS/s 6b TI binary search ADC with soft-decision selection in 65nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shengchang Cai; Ehsan Zhian Tabasy; Ayman Shafik; Shiva Kiran; Sebastian Hoyos; Samuel Palermo
Year: 2015
Document Type:
A 3–10fJ/conv-step 0.0032mm2 error-shaping alias-free asynchronous ADC
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sharvil Patil; Alin Ratiu; Dominique Morche; Yannis Tsividis
Year: 2015
Document Type:
A 6b 46GS/s ADC with >23GHz BW and sparkle-code error correction
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yida Duan; Elad Alon
Year: 2015
Document Type:
A 14b 750MS/s DAC in 20nm CMOS with <-168dBm/Hz noise floor beyond Nyquist and 79dBc SFDR utilizing a low glitch-noise hybrid R-2R architecture
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sang Min Lee; Dongwon Seo; Shahin Mehdizad Taleie; Derui Kong; Michael Joseph McGowan; Tongyu Song; Ganesh Saripalli; Jenny Kuo; Seyfi Bazarjani
Year: 2015
Document Type:
A 16-bit 10Gsps current steering RF DAC in 65nm CMOS achieving 65dBc ACLR multi-carrier performance at 4.5GHz Fout
Publisher: Japan Society of Applied Physics - JSAP
Authors:Gil Engel; Martin Clara; Haiyang Zhu; Paul Wilkins
Year: 2015
Document Type:
A 4×9 Gb/s 1 pJ/b NRZ/multi-tone serial-data transceiver with crosstalk reduction architecture for multi-drop memory interfaces in 40nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kiarash Gharibdoust; Armin Tajalli; Yusuf Leblebici
Year: 2015
Document Type:
A 6.4Gb/s/pin at sub-1V supply voltage TX-interleaving technique for mobile DRAM interface
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chang-Kyo Lee; Minsu Ahn; Daesik Moon; Kiho Kim; Yoon-Joo Eom; Won-Young Lee; Jongmin Kim; Sanghyuk Yoon; Baekkyu Choi; Seokhong Kwon; Joon-Young Park; Seung-Jun Bae; Yong-Cheol Bae; Jung-Hwan Choi; Seong-Jin Jang; Gyoyoung Jin
Year: 2015
Document Type:
A 4.35Gb/s/pin LPDDR4 I/O interface with multi-VOH level, equalization scheme, and duty-training circuit for mobile applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hae-Kang Jung; Jaemo Yang; Jeonghun Lee; Hyeongjun Ko; Hyuk Lee; Taeksang Song; Jongjoo Shim; Sang-Kwon Lee; Keunsoo Song; Dong-Kyun Kim; Hyungsoo Kim; Yunsaing Kim
Year: 2015
Document Type:
A computer designed half Gb 16-channel 819Gb/s high-bandwidth and 10ns low-latency DRAM for 3D stacked memory devices using TSVs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Pei-Wen Luo; Chi-Kang Chen; Yu-Hui Sung; Wei Wu; Hsiu-Chuan Shih; Chia-Hsin Lee; Kuo-Hua Lee; Ming-Wei Li; Mei-Chiang Lung; Chun-Nan Lu; Yung-Fa Chou; Po-Lin Shih; Chung-Hu Ke; Chun Shiah; Patrick Stolt; Shigeki Tomishima; Ding-Ming Kwai; Bor-Doou Rong; Nicky Lu; Shih-Lien Lu; Cheng-Wen Wu
Year: 2015
Document Type:
A self-referenced VCO-based temperature sensor with 0.034°C/mV supply sensitivity in 65nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tejasvi Anand; Kofi A. A. Makinwa; Pavan Kumar Hanumolu
Year: 2015
Document Type:
A 10.6mm3 fully-integrated, wireless sensor node with 8GHz UWB transmitter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hyeongseok Kim; Gyouho Kim; Yoonmyung Lee; Zhiyoong Foo; Dennis Sylvester; David Blaauw; David Wentzloff
Year: 2015
Document Type:
A 4.84mW 30fps dual frequency division multiplexing electrical impedance tomography SoC for lung ventilation monitoring system
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yongsu Lee; Kiseok Song; Hoi-Jun Yoo
Year: 2015
Document Type:
A fully integrated CMOS fluorescence biosensor with on-chip nanophotonic filter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Lingyu Hong; Simon McManus; Haw Yang; Kaushik Sengupta
Year: 2015
Document Type:
An efficient and resilient ultra-high speed galvanic data isolator leveraging broad-band multi resonant tank electro-magnetic coupling
Publisher: Japan Society of Applied Physics - JSAP
Authors:Swaminathan Sankaran; Bradley Kramer; Gregory Howard; Benjamin Sutton; Randall Walberg; Vijaylaxmi Khanolkar; Robert Payne; Mark Morgan
Year: 2015
Document Type:
A 100-GbE reverse gearbox IC in 40nm CMOS for supporting legacy 10- and 40-GbE standards
Publisher: Japan Society of Applied Physics - JSAP
Authors:Taehun Yoon; Joon-Yeong Lee; Kwangseok Han; Jeongsup Lee; Sangeun Lee; Taeho Kim; Hyosup Won; Jinho Park; Hyeon-Min Bae
Year: 2015
Document Type:
A 2.7mW/Channel 48-to-1000MHz Direct Sampling Full-Band Cable Receiver
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jiangfeng Wu; Giuseppe Cusmai; Acer Wei-Te Chou; Tao Wang; Bo Shen; Vijayaramalingam Periasamy; Ming-Hung Hsieh; Chun-Ying Chen; Lin He; Loke Tan; Aravind Padyana; Cheng-Hsun Yang; Gregory Unruh; Jackie Koon Lun Wong; Juo-Jung Hung; Massimo Brandolini; Sha-Ting Lin; Xi Chen; Yen Ding; Yen-Jen Ko; Young Shin; Ada Hung; Binning Chen; Cynthia Dang; Deepak Lakshminarasimhan; Iris Hong Liu; Jerry Lin; Kowen Lai; Larry Wassermann; Ayaskant Shrivastava; Chi-Ming Hsiao; Chun-Sheng Huang; Jianlong Chen; Lakshminarasimhan Krishnan; Ning-Yi Wang; Pin-En Su; Tianwei Li; Wei-Ta Shih; Yau-Cheng Yang; Pete Cangiane; Randall Perlow; William Ngai; Hung-Sen Huang; James Y. C. Chang; Xicheng Jiang; Ardie Venes; Ramon Gomez
Year: 2015
Document Type:
A fully integrated IEEE 802.15.7 visible light communication transmitter with on-chip 8-W 85% efficiency boost LED driver
Publisher: Japan Society of Applied Physics - JSAP
Authors:Babar Hussain; Fengyu Che; Feng Zhang; Tak Sang Yim; Lin Cheng; Wing-Hung Ki; C. Patrick Yue; Liang Wu
Year: 2015
Document Type:
A 32 Gb/s 0.55 mW/Gbps PAM4 1-FIR 2-IIR tap DFE receiver in 65-nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Osama Elhadidy; Ashkan Roshan-Zamir; Hae-Woong Yang; Samuel Palermo
Year: 2015
Document Type:
A 40-Gb/s 9.2-mW CMOS equalizer
Publisher: Japan Society of Applied Physics - JSAP
Authors:Abishek Manian; Behzad Razavi
Year: 2015
Document Type:
A 5.9mW/Gb/s 7Gb/s/pin 8-lane single-ended RX with crosstalk cancellation scheme using a XCTLE and 56-tap XDFE in 32nm SOI CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Cevrero; C. Aprile; P. A. Francese; U. Bapst; C. Menolfi; M. Braendli; M. Kossel; T. Morf; L. Kull; H. Yueksel; I. Oezkaya; Y. Leblebici; V. Cevher; T. Toifl
Year: 2015
Document Type:
A 60Gb/s 173mW receiver frontend in 65nm CMOS technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jaeduk Han; Yue Lu; Nicholas Sutardja; Kwangmo Jung; Elad Alon
Year: 2015
Document Type:
A dithering-less 54.79-to-63.16GHz DCO with 4-Hz frequency resolution using an exponentially-scaling C-2C switched-capacitor ladder
Publisher: Japan Society of Applied Physics - JSAP
Authors:Zhiqiang Huang; Howard C. Luong
Year: 2015
Document Type:
A −194 dBc/Hz FOM interactive current-reused QVCO (ICR-QVCO) with capacitor-coupling self-switching sinusoidal current biasing (CSSCB) phase noise reduction technique
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kuan-I Wu; I-Shing Shen; Christina F. Jou; Charlie Chung-Ping Chen
Year: 2015
Document Type:
A 99nW 70.4kHz resistive frequency locking on-chip oscillator with 27.4ppm/ºC temperature stability
Publisher: Japan Society of Applied Physics - JSAP
Authors:Myungjoon Choi; Suyoung Bang; Tae-Kwang Jang; David Blaauw; Dennis Sylvester
Year: 2015
Document Type:
4.2 pW timer for heavily duty-cycled systems
Publisher: Japan Society of Applied Physics - JSAP
Authors:Phillip M. Nadeau; Arun Paidimarri; Anantha P. Chandrakasan
Year: 2015
Document Type:
A low-PDP and low-area repeater using passive CTLE for on-chip interconnects
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ming-Shuan Chen; Mau-Chung Frank Chang; Chih-Kong Ken Yang
Year: 2015
Document Type:
1.32GHz high-throughput charge-recovery AES core with resistance to DPA attacks
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shengshuo Lu; Zhengya Zhang; Marios Papaefthymiou
Year: 2015
Document Type:
A robust −40 to 120°C all-digital true random number generator in 40nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kaiyuan Yang; David Blaauw; Dennis Sylvester
Year: 2015
Document Type:
A 3.07μm2/bitcell physically unclonable function with 3.5% and 1% bit-instability across 0 to 80°C and 0.6 to 1.2V in a 65nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jiangyi Li; Mingoo Seok
Year: 2015
Document Type:
A 75 MHz BW 68dB DR CT-ΣΔ modulator with single amplifier biquad filter and a broadband low-power common-gate summing technique
Publisher: Japan Society of Applied Physics - JSAP
Authors:Carlos Briseno-Vidrios; Alexander Edward; Ayman Shafik; Samuel Palermo; Jose Silva-Martinez
Year: 2015
Document Type:
A 54mW 1.2GS/s 71.5dB SNDR 50MHz BW VCO-based CT ΔΣ ADC using dual phase/frequency feedback in 65nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Karthikeyan Reddy; Siladitya Dey; Sachin Rao; Brian Young; Praveen Prabha; Pavan Kumar Hanumolu
Year: 2015
Document Type:
A 7.2 mW 75.3 dB SNDR 10 MHz BW CT delta-sigma modulator using Gm-C-based noise-shaped quantizer and digital integrator
Publisher: Japan Society of Applied Physics - JSAP
Authors:Taewook Kim; Changsok Han; Nima Maghari
Year: 2015
Document Type:
A 16nm FinFet 19/39MHz 78/72dB DR noise-injected aggregated CTSDM ADC for configurable LTE advanced CCA/NCCA Application
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tsung-Kai Kao; Ping Chen; Jui-Yuan Tsai; Pao-Cheng Chiu
Year: 2015
Document Type:
A 10/20/30/40 MHz feed-forward FIR DAC continuous-time ΔΣ ADC with robust blocker performance for radio receivers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sebastian Loeda; Jeffrey Harrison; Franck Pourchet; Andrew Adams
Year: 2015
Document Type:
A 0.094um2 high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kyung-Hoae Koo; Liqiong Wei; John Keane; Uddalak Bhattacharya; Eric A. Karl; Kevin Zhang
Year: 2015
Document Type:
14nm FinFET based supply voltage boosting techniques for extreme low Vmin operation
Publisher: Japan Society of Applied Physics - JSAP
Authors:R. V. Joshi; M. Ziegler; H. Wetter; C. Wandel; H. Ainspan
Year: 2015
Document Type:
A reconfigurable sense amplifier with 3X offset reduction in 28nm FDSOI CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Mahmood Khayatzadeh; Fabio Frustaci; David Blaauw; Dennis Sylvester; Massimo Alioto
Year: 2015
Document Type:
A configurable TCAM/BCAM/SRAM using 28nm push-rule 6T bit cell
Publisher: Japan Society of Applied Physics - JSAP
Authors:Supreet Jeloka; Naveen Akesh; Dennis Sylvester; David Blaauw
Year: 2015
Document Type:
1.8 Mbit/mm2 ternary-CAM macro with 484 ps search access time in 16 nm Fin-FET bulk CMOS technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yasumasa Tsukamoto; Masao Morimoto; Makoto Yabuuchi; Miki Tanaka; Koji Nii
Year: 2015
Document Type:
Profiting from IoT: The key is very-large-scale happiness integration
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kazuo Yano; Tomoaki Akitomi; Koji Ara; Junichiro Watanabe; Satomi Tsuji; Nobuo Sato; Miki Hayakawa; Norihiko Moriwaki
Year: 2015
Document Type:
Automated driving — Impacts on the vehicle architecture
Publisher: Japan Society of Applied Physics - JSAP
Authors:Michael Fausten; Thorsten Huck; Armin Ruhle; Tuelin Baysal; Robert Kornhaas
Year: 2015
Document Type:
A 0.78mW/cm2 autonomous thermoelectric energy-harvester for biomedical sensors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Dejan Rozgic; Dejan Markovic
Year: 2015
Document Type:
Solar energy harvesting system with integrated battery management and startup using single inductor and 3.2nW quiescent power
Publisher: Japan Society of Applied Physics - JSAP
Authors:Dina El-Damak; Anantha P. Chandrakasan
Year: 2015
Document Type:
A 2.5-V, 160-μJ-output piezoelectric energy harvester and power management IC for batteryless wireless switch (BWS) applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Joonseok Yang; Minbok Lee; Myeong-Jae Park; Sung-Youb Jung; Jaeha Kim
Year: 2015
Document Type:
A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chul Kim; Sohmyung Ha; Jiwoong Park; Abraham Akinin; Patrick P. Mercier; Gert Cauwenberghs
Year: 2015
Document Type:
A 5.5W AC input converter-free LED driver with 82% low-frequency-flicker reduction, 88.2% efficiency and 0.92 power factor
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yuan Gao; Lisong Li; Philip K. T. Mok
Year: 2015
Document Type:
A 0.7 V 256 μW ΔΣ modulator with passive RC integrators achieving 76 dB DR in 2 MHz BW
Publisher: Japan Society of Applied Physics - JSAP
Authors:Joao L. A. de Melo; Joao Goes; Nuno Paulino
Year: 2015
Document Type:
A 13-ENOB, 5 MHz BW, 3.16 mW multi-bit continuous-time ΔΣ ADC in 28 nm CMOS with excess-loop-delay compensation embedded in SAR quantizer
Publisher: Japan Society of Applied Physics - JSAP
Authors:Guowen Wei; Pradeep Shettigar; Feng Su; Xinyu Yu; Tom Kwan
Year: 2015
Document Type:
A low-power Gm-C-based CT-ΔΣ audio-band ADC in 1.1V 65nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Imran Ahmed; James Cherry; Ayaz Hasan; Akram Nafee; David Halupka; Younis Allasasmeh; Martin Snelgrove
Year: 2015
Document Type:
7.4μW Ultra-high slew-rate pseudo single-stage amplifier driving 0.1-to-15nF capacitive load with >69° phase margin
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sung-Wan Hong; Gyu-Hyeong Cho
Year: 2015
Document Type:
A fully integrated ±5A current-sensing system with ±0.25% gain error and 12μΑ offset from −40°C to +85°C
Publisher: Japan Society of Applied Physics - JSAP
Authors:Saleh Heidary Shalmany; Gottfried Beer; Dieter Draxelmayr; Kofi Makinwa
Year: 2015
Document Type:
410-GHz CMOS imager using a 4th sub-harmonic mixer with effective NEP of 0.3 fW/Hz0.5 at 1-kHz noise bandwidth
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wooyeol Choi; Zeshan Ahmad; Amit Jha; Ja-Yol Lee; Insoo Kim; K. O. Kenneth
Year: 2015
Document Type:
A CMOS 4-channel MIMO baseband receiver with 65dB harmonic rejection over 48MHz and 50dB spatial signal separation over 3MHz at 1.3mW
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chul Kim; Siddharth Joshi; Chris Thomas; Sohmyung Ha; Abraham Akinin; Lawrence Larson; Gert Cauwenberghs
Year: 2015
Document Type:
A 60GHz wireless transceiver employing hybrid analog/digital beamforming with interference suppression for multiuser gigabit/s radio access
Publisher: Japan Society of Applied Physics - JSAP
Authors:Koji Takinami; Naganori Shirakata; Koichiro Tanaka; Takayuki Tsukizawa; Hiroyuki Motozuka; Yohei Morishita; Kenji Miyanaga; Takenori Sakamoto; Tomoya Urushihara; Masashi Kobayashi; Hiroshi Takahashi; Masataka Irie; Hiroyuki Yoshikawa; Atsushi Yoshimoto; Masatake Irie; Maki Nakamura; Takeaki Watanabe; Hiroshi Komori; Noriaki Saito
Year: 2015
Document Type:
A TDD/FDD SAW-less superheterodyne receiver with blocker-resilient band-pass filter and multi-stage HR in 28nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Iman Madadi; Massoud Tohidian; Koen Cornelissens; Patrick Vandenameele; R. Bogdan Staszewski
Year: 2015
Document Type:
0.65–0.73THz quintupler with an on-chip antenna in 65-nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Zeshan Ahmad; K. O. Kenneth
Year: 2015
Document Type:
Broadwell: A family of IA 14nm processors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ankireddy Nalamalpu; Nasser Kurd; Anant Deval; Chris Mozak; Jonathan Douglas; Ashish Khanna; Fabrice Paillet; Gerhard Schrom; Boyd Phelps
Year: 2015
Document Type:
A RISC-V vector processor with tightly-integrated switched-capacitor DC-DC converters in 28nm FDSOI
Publisher: Japan Society of Applied Physics - JSAP
Authors:Brian Zimmer; Yunsup Lee; Alberto Puggelli; Jaehwa Kwak; Ruzica Jevtic; Ben Keller; Stevo Bailey; Milovan Blagojevic; Pi-Feng Chiu; Hanh-Phuc Le; Po-Hung Chen; Nicholas Sutardja; Rimas Avizienis; Andrew Waterman; Brian Richards; Philippe Flatresse; Elad Alon; Krste Asanovic; Borivoje Nikolic
Year: 2015
Document Type:
A 16-core voltage-stacked system with an integrated switched-capacitor DC-DC converter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sae Kyu Lee; Tao Tong; Xuan Zhang; David Brooks; Gu-Yeon Wei
Year: 2015
Document Type:
Fully integrated DC-DC converter and a 0.4V 32-bit CPU with timing-error prevention supplied from a prototype 1.55V Li-ion battery
Publisher: Japan Society of Applied Physics - JSAP
Authors:Matthew Turnquist; Markus Hiienkari; Jani Makipaa; Ruzica Jevtic; Elina Pohjalainen; Tanja Kallio; Lauri Koskinen
Year: 2015
Document Type:
Resonant clock mega-mesh for the IBM z13TM
Publisher: Japan Society of Applied Physics - JSAP
Authors:David Shan; Phillip Restle; Doug Malone; Rob Groves; Eric Lai; Michael Koch; Jason Hibbeler; Yong Kim; Christos Vezyrtzis; Jan Feder; David Hogenmiller; Thomas Bucelot
Year: 2015
Document Type:
Hybrid driver IC for real-time TFT non-uniformity compensation of ultra high-definition AMOLED display
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jun-Suk Bang; Hyun-Sik Kim; Sang-Hui Park; Ki-Duk Kim; Sung-Won Choi; Oh-Jo Kwon; Choong-Sun Shin; Joohyung Lee; Gyu-Hyeong Cho
Year: 2015
Document Type:
An AMLED microdisplay driver SoC with built-in 1.25-Mb/s VLC transmitter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Liang Wu; Xianbo Li; Wing Cheung Chong; Zhaojun Liu; Fengyu Che; Babar Hussain; Kei May Lau; C. Patrick Yue
Year: 2015
Document Type:
Wide input range 1.7μW 1.2kS/s resistive sensor interface circuit with 1 cycle/sample logarithmic sub-ranging
Publisher: Japan Society of Applied Physics - JSAP
Authors:Myungjoon Choi; Junhua Gu; David Blaauw; Dennis Sylvester
Year: 2015
Document Type:
A near-field modulation chopping stabilized injection-locked oscillator sensor for protein conformation detection at microwave frequency
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jun-Chau Chien; Erh-Chia Yeh; Luke P. Lee; Mekhail Anwar; Ali M. Niknejad
Year: 2015
Document Type:
A fully-integrated 40-phase flying-capacitance-dithered switched-capacitor voltage regulator with 6mV output ripple
Publisher: Japan Society of Applied Physics - JSAP
Authors:Suyoung Bang; Jae-sun Seo; Inhee Lee; Seokhyeon Jeong; Nathaniel Pinckney; David Blaauw; Dennis Sylvester; Leland Chang
Year: 2015
Document Type:
A 1W 8-ratio switched-capacitor boost power converter in 140nm CMOS with 94.5% efficiency, 0.5mm thickness and 8.1mm2 PCB area
Publisher: Japan Society of Applied Physics - JSAP
Authors:Gerard Villar Pique; Henk Jan Bergveld; Ravi Karadi
Year: 2015
Document Type:
A battery-connected 24-ratio switched capacitor PMIC achieving 95.5%-efficiency
Publisher: Japan Society of Applied Physics - JSAP
Authors:Loai G. Salem; Patrick P. Mercier
Year: 2015
Document Type:
86.55% Peak efficiency envelope modulator for 1.5W 10MHz LTE PA without AC coupling capacitor
Publisher: Japan Society of Applied Physics - JSAP
Authors:SiDuk Sung; Sung-Wan Hong; Jun-Suk Bang; Ji-Seon Paek; Seung-Chul Lee; Thomas Byung-Hak Cho; Gyu-Hyeong Cho
Year: 2015
Document Type:
A 0.5-to-0.75V, 3-to-8 Gbps/lane, 385-to-790 fJ/b, bi-directional, quad-lane forwarded-clock transceiver in 22nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Rajesh Inti; Sudip Shekhar; Ganesh Balamurugan; James Jaussi; Clark Roberts; Tzu-Chien Hsueh; Bryan Casper
Year: 2015
Document Type:
A 3.8 mW/Gbps quad-channel 8.5–13 Gbps serial link with a 5-tap DFE and a 4-tap transmit FFE in 28 nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tamer Ali; Lakshmi Rao; Ullas Singh; Mohammed Abdul-Latif; Yang Liu; Amr Amin Hafez; Henry Park; Anand Vasani; Zhi Huang; Arvindh Iyer; Bo Zhang; Afshin Momtaz; Namik Kocaman
Year: 2015
Document Type:
A 1.2–5Gb/s 1.4–2pJ/b serial link in 22nm CMOS with a direct data-sequencing blind oversampling CDR
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sudip Shekhar; Rajesh Inti; James Jaussi; Tzu-Chien Hsueh; Bryan Casper
Year: 2015
Document Type:
A 2.8mW/Gb/s 14Gb/s serial link transceiver in 65nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Saurabh Saxena; Guanghua Shu; Romesh Kumar Nandwana; Mrunmay Talegaonkar; Ahmed Elkholy; Tejasvi Anand; Seong Joong Kim; Woo-Seok Choi; Pavan Kumar Hanumolu
Year: 2015
Document Type:
A 0.5-degree error 10mW CMOS image sensor-based gaze estimation processor with logarithmic processing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kyeongryeol Bong; Injoon Hong; Gyeonghoon Kim; Hoi-Jun Yoo
Year: 2015
Document Type:
A 23mW face recognition accelerator in 40nm CMOS with mostly-read 5T memory
Publisher: Japan Society of Applied Physics - JSAP
Authors:Dongsuk Jeon; Qing Dong; Yejoong Kim; Xiaolong Wang; Shuai Chen; Hao Yu; David Blaauw; Dennis Sylvester
Year: 2015
Document Type:
A 640M pixel/s 3.65mW sparse event-driven neuromorphic object recognition processor with on-chip learning
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jung Kuk Kim; Phil Knag; Thomas Chen; Zhengya Zhang
Year: 2015
Document Type:
A 33 nJ/vector descriptor generation processor for low-power object recognition
Publisher: Japan Society of Applied Physics - JSAP
Authors:Dongjoo Shin; Injoon Hong; Gyeonghoon Kim; Hoi-Jun Yoo
Year: 2015
Document Type:
Single-chip 4K 60fps 4:2:2 HEVC video encoder LSI with 8K scalability
Publisher: Japan Society of Applied Physics - JSAP
Authors:Takayuki Onishi; Takashi Sano; Yukikuni Nishida; Kazuya Yokohari; Jia Su; Ken Nakamura; Koyo Nitta; Kimiko Kawashima; Jun Okamoto; Naoki Ono; Ritsu Kusaba; Atsushi Sagata; Hiroe Iwasaki; Mitsuo Ikeda; Atsushi Shimizu
Year: 2015
Document Type:
A sharp programmable passive filter based on filtering by Aliasing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Neha Sinha; Mansour Rachid; Sudhakar Pamarti
Year: 2015
Document Type:
A 120nW 8b sub-ranging SAR ADC with signal-dependent charge recycling for biomedical applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Seokhyeon Jeong; Wanyeong Jung; Dongsuk Jeon; Omer Berenfeld; Hakan Oral; Grant Kruger; David Blaauw; Dennis Sylvester
Year: 2015
Document Type:
A 12b 70MS/s SAR ADC with digital startup calibration in 14nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chun C. Lee; Cho-Ying Lu; Ramya Narayanaswamy; Jad B. Rizk
Year: 2015
Document Type:
A 9.35-ENOB, 14.8 fJ/conv.-step fully-passive noise-shaping SAR ADC
Publisher: Japan Society of Applied Physics - JSAP
Authors:Zhijie Chen; Masaya Miyahara; Akira Matsuzawa
Year: 2015
Document Type:
A 12-bit 200-MS/s 3.4-mW CMOS ADC with 0.85-V supply
Publisher: Japan Society of Applied Physics - JSAP
Authors:Joseph Palackal Mathew; Long Kong; Behzad Razavi
Year: 2015
Document Type:
Image sensor/digital logic 3D stacked module featuring inductive coupling channels for high speed/low-noise image transfer
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masayuki Ikebe; Daisuke Uchida; Yasuhiro Take; Makito Someya; Satoshi Chikuda; Kento Matsuyama; Tetsuya Asai; Tadahiro Kuroda; Masato Motomura
Year: 2015
Document Type:
A 0.66erms temporal-readout-noise 3D-stacked CMOS image sensor with conditional correlated multiple sampling (CCMS) technique
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shang-Fu Yeh; Kuo-Yu Chou; Hon-Yih Tu; Calvin Yi-Ping Chao; Fu-Lung Hsueh
Year: 2015
Document Type:
A 0.4V self-powered CMOS imager with 140dB dynamic range and energy harvesting
Publisher: Japan Society of Applied Physics - JSAP
Authors:Albert Yen-Chih Chiou; Chih-Cheng Hsieh
Year: 2015
Document Type:
A linear response single exposure CMOS image sensor with 0.5e readout noise and 76ke full well capacity
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shunichi Wakashima; Fumiaki Kusuhara; Rihito Kuroda; Shigetoshi Sugawa
Year: 2015
Document Type:
A 3D stacked CMOS image sensor with 16Mpixel global-shutter mode and 2Mpixel 10000fps mode using 4 million interconnections
Publisher: Japan Society of Applied Physics - JSAP
Authors:Toru Kondo; Yoshiaki Takemoto; Kenji Kobayashi; Mitsuhiro Tsukimura; Naohiro Takazawa; Hideki Kato; Shunsuke Suzuki; Jun Aoki; Haruhisa Saito; Yuichi Gomi; Seisuke Matsuda; Yoshitaka Tadaki
Year: 2015
Document Type:
A 3.5mW 315/400MHz IEEE802.15.6/proprietary mode digitally-tunable radio SoC with integrated digital baseband and MAC processor in 40nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Christian Bachmann; Maja Vidojkovic; Xiongchuan Huang; Maarten Lont; Yao-Hong Liu; Ming Ding; Benjamin Busze; Jordy Gloudemans; Hans Giesen; Adnane Sbai; Gert-Jan van Schaik; Nauman Kiyani; Kouichi Kanda; Kazuaki Oishi; Shoichi Masui; Kathleen Philips; Harmke de Groot
Year: 2015
Document Type:
A 1Gb/s energy efficient triple-channel UWB-based cognitive radio
Publisher: Japan Society of Applied Physics - JSAP
Authors:Nam-Seog Kim; Jan M. Rabaey
Year: 2015
Document Type:
A 0.6V all-digital body-coupled wakeup transceiver for IoT applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Paul N. Whatmough; George Smart; Shidhartha Das; Yiannis Andreopoulos; David M. Bull
Year: 2015
Document Type:
A self-powered IPv6 bidirectional wireless sensor & actuator network for indoor conditions
Publisher: Japan Society of Applied Physics - JSAP
Authors:P. Urard; G. Romagnello; A. Banciu; J. C. Grasset; V. Heinrich; M. Boulemnakher; F. Todeschni; L. Damon; R. Guizzetti; L. Andre; A. Cathelin
Year: 2015
Document Type:
A 794Mbps 135mW iterative detection and decoding receiver for 4×4 LDPC-coded MIMO systems in 40nm
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wei-Hsuan Wu; Wei-Cheng Sun; Chia-Hsiang Yang; Yeong-Luh Ueng
Year: 2015
Document Type:
A 16-channel wireless neural interfacing SoC with RF-powered energy-replenishing adiabatic stimulation
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. Ha; A. Akinin; J. Park; C. Kim; H. Wang; C. Maier; G. Cauwenberghs; P. P. Mercier
Year: 2015
Document Type:
Enabling closed-loop neural interface: A bi-directional interface circuit with stimulation artifact cancellation and cross-channel CM noise suppression
Publisher: Japan Society of Applied Physics - JSAP
Authors:Adam E. Mendrela; Jihyun Cho; Jeffrey A. Fredenburg; Cynthia A. Chestek; Michael P. Flynn; Euisik Yoon
Year: 2015
Document Type:
Neurochemical thermostat: A neural interface SoC with integrated chemometrics for closed-loop regulation of brain dopamine
Publisher: Japan Society of Applied Physics - JSAP
Authors:Bardia Bozorgzadeh; Douglas Schuweiler; Martin Bobak; Paul A. Garris; Pedram Mohseni
Year: 2015
Document Type:
Toward 1024-channel parallel neural recording: Modular Δ-ΔΣ analog front-end architecture with 4.84fJ/C-s·mm2 energy-area product
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sung-Yun Park; Jihyun Cho; Kyounghwan Na; Euisik Yoon
Year: 2015
Document Type:
A 19.6-Gbps CMOS optical receiver with local feedback IIR DFE
Publisher: Japan Society of Applied Physics - JSAP
Authors:Alireza Sharif-Bakhtiar; Anthony Chan Carusone
Year: 2015
Document Type:
56Gb/s PAM4 and NRZ SerDes transceivers in 40nm CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jri Lee; Ping-Chuan Chiang; Chih-Chi Weng
Year: 2015
Document Type:
A 25-Gb/s, −10.8-dBm input sensitivity, PD-bandwidth tolerant CMOS optical receiver
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shih-Hao Huang; Wei-Zen Chen
Year: 2015
Document Type:
A 45nm SOI monolithic photonics chip-to-chip link with bit-statistics-based resonant microring thermal tuning
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chen Sun; Mark Wade; Michael Georgas; Sen Lin; Luca Alloatti; Benjamin Moss; Rajesh Kumar; Amir Atabaki; Fabio Pavanello; Rajeev Ram; Milos Popovic; Vladimir Stojanovic
Year: 2015
Document Type:
FPGA-accelerated complex event processing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Takashi Takenaka; Hiroaki Inoue; Takeo Hosomi; Yuichi Nakamura
Year: 2015
Document Type:
Inductively-powered wireless solid-state drive (SSD) system with merged error correction of high-speed non-contact data links and NAND flash memory
Publisher: Japan Society of Applied Physics - JSAP
Authors:Atsutake Kosuge; Junki Hashiba; Toru Kawajiri; So Hasegawa; Tsunaaki Shidei; Hiroki Ishikuro; Tadahiro Kuroda; Ken Takeuchi
Year: 2015
Document Type:
Privacy-protection solid-state storage (PP-SSS) system: Automatic lifetime management of internet-data's right to be forgotten
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shuhei Tanakamaru; Hiroki Yamazawa; Ken Takeuchi
Year: 2015
Document Type:
Caching mechanisms towards single-level storage systems for Internet of Things
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yosuke Bando; Konosuke Watanabe; Ken-ichi Maeda; Hiroki Kudo; Masahiro Ishiyama; Atsushi Kunimatsu; Hiroto Nakai; Masafumi Takahashi; Yukihito Oowaki
Year: 2015
Document Type:
An all-digital bang-bang PLL using two-point modulation and background gain calibration for spread spectrum clock generation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sungchun Jang; Sungwoo Kim; Sang-Hyeok Chu; Gyu-Seob Jeong; Yoonsoo Kim; Deog-Kyoon Jeong
Year: 2015
Document Type:
A digital bang-bang phase-locked loop with automatic loop gain control and loop latency reduction
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ting-Kuei Kuan; Shen-Iuan Liu
Year: 2015
Document Type:
A 0.4–1.6GHz spur-free bang-bang digital PLL in 65nm with a D-flip-flop based frequency subtractor circuit
Publisher: Japan Society of Applied Physics - JSAP
Authors:Bongjin Kim; Somnath Kundu; Chris H. Kim
Year: 2015
Document Type:
A 450-fs jitter PVT-robust fractional-resolution injection-locked clock multiplier using a DLL-based calibrator with replica-delay-cells
Publisher: Japan Society of Applied Physics - JSAP
Authors:Mina Kim; Seojin Choi; Jaehyouk Choi
Year: 2015
Document Type:
Circuits evening panel discussion 1: Is university circuit design research and education keeping up with industry needs?
Publisher: Japan Society of Applied Physics - JSAP
Authors:P. Yue; B. Sheu; A. Matsuzawa; K. Asada; L. Loh; K. Makinwa; S. Borkar; V. Stojanovic
Year: 2015
Document Type:
Circuits evening panel discussion 2: Wearable electronics: Still an oasis or just a mirage for the semiconductor industry?
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y.-S Shu; N. Verma; K. Yano; T. Someya; H.-J Yoo; K. Vasanth; D. Blaauw; L. Krishnamurthy; S. J. Kim
Year: 2015
Document Type:
Technology/circuits joint evening panel discussion semiconductor industry in 2020: Evolution or revolution?
Publisher: Japan Society of Applied Physics - JSAP
Authors:N. Sugii; G. Jurczak; M. Yamaoka; A. Molnar; J. Tham; T. Piliszczuk; O. Nalamasu; J. Hausner; S. Tanaka; T. Yamauchi; S. Sivaram; C. Diaz; W. Dai
Year: 2015
Document Type:
Automotive low power technology for IoT society
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tadaaki Yamauchi; Hiroyuki Kondo; Koji Nii
Year: 2015
Document Type:
IoT: The Impact of Things
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jo de Boeck
Year: 2015
Document Type:
Transistor-interconnect mobile system-on-chip co-design method for holistic battery energy minimization
Publisher: Japan Society of Applied Physics - JSAP
Authors:N. N. Mojumder; S. C. Song; K. Rim; J. Xu; J. Wang; J. Zhu; M. Vratonjic; K. Lin; M. Saint-Laurent; P. Bassett; Geoffrey Yeap
Year: 2015
Document Type:
Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Tsuji; X. Bai; M. Miyamura; T. Sakamoto; M. Tada; N. Banno; K. Okamoto; N. Iguchi; N. Sugii; H. Hada
Year: 2015
Document Type:
Breakthrough technologies and reference designs for new IoT applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ph Magarshack
Year: 2015
Document Type:
The progresses of MRAM as a memory to save energy consumption and its potential for further reduction
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. Yoda; E. Kitagawa; N. Shimomura; S. Fujita; M. Amano
Year: 2015
Document Type:
Challenges for high-density 16Gb ReRAM with 27nm technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:Scott Sills; Shuichiro Yasuda; Alessandro Calderoni; Christopher Cardon; Jonathan Strand; Katsuhisa Aratani; Nirmal Ramaswamy
Year: 2015
Document Type:
Low-power embedded ReRAM technology for IoT applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Ueki; K. T. Akeuchi; T. Yamamoto; A. Tanabe; N. Ikarashi; M. Saitoh; T. Nagumo; H. Sunamura; M. Narihiro; K. Uejima; K. Masuzaki; N. Furutake; S. Saito; Y. Yabe; A. Mitsuiki; K. Takeda; T. Hase; Y. Hayashi
Year: 2015
Document Type:
RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Albert Lee; Meng-Fan Chang; Chien-Chen Lin; Chien-Fu Chen; Mon-Shu Ho; Chia-Chen Kuo; Pei-Ling Tseng; Shyh-Shyuan Sheu; Tzu-Kun Ku
Year: 2015
Document Type:
Reliability enhancement of 1Xnm TLC for cold flash and millennium memories
Publisher: Japan Society of Applied Physics - JSAP
Authors:Senju Yamazaki; Shuhei Tanakamaru; Sakuya Suzuki; Tomoko Ogura Iwasaki; Shogo Hachiya; Ken Takeuchi
Year: 2015
Document Type:
Technology innovation in an IoT Era
Publisher: Japan Society of Applied Physics - JSAP
Authors:An Steegen
Year: 2015
Document Type:
Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:D. Suzuki; M. Natsui; A. Mochizuki; S. Miura; H. Honjo; H. Sato; S. Fukami; S. Ikeda; T. Endoh; H. Ohno; T. Hanyu
Year: 2015
Document Type:
Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. H. Kulkarni; Z. Chen; B. Srinivasan; B. Pedersen; U. Bhattacharya; K. Zhang
Year: 2015
Document Type:
Holistic technology optimization and key enablers for 7nm mobile SoC
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. C. Song; J. Xu; N. N. Mojumder; K. Rim; D. Yang; J. Bao; J. Zhu; J. Wang; M. Badaroglu; V. Machkaoutsan; P. Narayanasetti; B. Bucki; J. Fischer; Geoffrey Yeap
Year: 2015
Document Type:
Active-lite interposer for 2.5 & 3D integration
Publisher: Japan Society of Applied Physics - JSAP
Authors:G. Hellings; M. Scholz; M. Detalle; D. Velenis; M. de Potter de ten Broeck; C. Roda Neve; Y. Li; S. Van Huylenbroek; S.-H Chen; E.-J Marinissen; A. La Manna; G. Van der Plas; D. Linten; E. Beyne; A. Thean
Year: 2015
Document Type:
An 82%-efficient multiphase voltage-regulator 3D interposer with on-chip magnetic inductors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kevin Tien; Noah Sturcken; Naigang Wang; Jae-woong Nah; Bing Dang; Eugene O'Sullivan; Paul Andry; Michele Petracca; Luca P. Carloni; William Gallagher; Kenneth Shepard
Year: 2015
Document Type:
15 dB Conversion gain, 20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Ishida; R. Shabanpour; T. Meister; B. K. Boroujeni; C. Carta; L. Petti; N. Munzenrieder; G. A. Salvatore; G. Troster; F. Ellinger
Year: 2015
Document Type:
Reconstruction of multiple-user voice commands using a hybrid system based on thin-film electronics and CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:L. Huang; J. Sanz-Robinson; T. Moy; Y. Hu; W. Rieutort-Louis; S. Wagner; J. C. Sturm; N. Verma
Year: 2015
Document Type:
System challenges and hardware requirements for future consumer devices: From wearable to ChromeBooks and devices in-between
Publisher: Japan Society of Applied Physics - JSAP
Authors:Eric Shiu; Simon Prakash
Year: 2015
Document Type:
Robotics for innovation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hirohisa Hirukawa
Year: 2015
Document Type:
A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high performance and high density SoC products
Publisher: Japan Society of Applied Physics - JSAP
Authors:C.-H Jan; F. Al-amoody; H.-Y Chang; T. Chang; Y.-W Chen; N. Dias; W. Hafez; D. Ingerly; M. Jang; E. Karl; S. K.-Y Shi; K. Komeyli; H. Kilambi; A. Kumar; K. Byon; C.-G Lee; J. Lee; T. Leo; P.-C Liu; N. Nidhi; R. Olac-vaw; C. Petersburg; K. Phoa; C. Prasad; C. Quincy; R. Ramaswamy; T. Rana; L. Rockford; A. Subramaniam; C. Tsai; P. Vandervoorn; L. Yang; A. Zainuddin; P. Bai
Year: 2015
Document Type:
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Hayakawa; A. Himeno; R. Yasuhara; W. Boullart; E. Vecchio; T. Vandeweyer; T. Witters; D. Crotti; M. Jurczak; S. Fujii; S. Ito; Y. Kawashima; Y. Ikeda; A. Kawahara; K. Kawai; Z. Wei; S. Muraoka; K. Shimakawa; T. Mikawa; S. Yoneda
Year: 2015
Document Type:
High-mobility high-Ge-content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
Publisher: Japan Society of Applied Physics - JSAP
Authors:P. Hashemi; T. Ando; K. Balakrishnan; J. Bruley; S. Engelmann; J. A. Ott; V. Narayanan; D.-G Park; R. T. Mo; E. Leobandung
Year: 2015
Document Type:
Design and demonstration of reliability-aware Ge gate stacks with 0.5 nm EOT
Publisher: Japan Society of Applied Physics - JSAP
Authors:C. Lu; C. H. Lee; T. Nishimura; A. Toriumi
Year: 2015
Document Type:
Foreword
Publisher: Japan Society of Applied Physics - JSAP
Authors:Toshiro Hiramoto; Raj Jammya
Year: 2015
Document Type:
Acknowledgment
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Executive committees
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
2015 symposia on VLSI technology & circuits - Conference schedule
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Session quick index
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Profiting from IoT: the key is very-large-scale happiness integration
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kazuo Yano; Tomoaki Akitomi; Koji Ara; Junichiro Watanabe; Satomi Tsuji; Nobuo Sato; Miki Hayakawa; Norihiko Moriwaki
Year: 2015
Document Type:
Automated driving - Impacts on the vehicle architecture
Publisher: Japan Society of Applied Physics - JSAP
Authors:Michael Fausten; Thorsten Huck; Armin Ruhle; Tuelin Baysal; Robert Kornhaas
Year: 2015
Document Type:
Automotive low power technology for IoT society
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tadaaki Yamauchi; Hiroyuki Kondo; Koji Nii
Year: 2015
Document Type:
IoT: The impact of things
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jo de Boeck
Year: 2015
Document Type:
Transistor-interconnect mobile system-on-chip co-design method for holistic battery energy minimization
Publisher: Japan Society of Applied Physics - JSAP
Authors:N. N. Mojumder; S. C. Song; K. Rim; J. Xu; J. Wang; J. Zhu; M. Vratonjic; K. Lin; M. Saint-Laurent; P. Bassett; Geoffrey Yeap
Year: 2015
Document Type:
Sub-μW standby power, <18 µW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Tsuji; X. Bai; M. Miyamura; T. Sakamoto; M. Tada; N. Banno; K. Okamoto; N. Iguchi; N. Sugii; H. Hada
Year: 2015
Document Type:
Breakthrough technologies and reference designs for new IoT applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ph Magarshack
Year: 2015
Document Type:
The progresses of MRAM as a memory to save energy consumption and its potential for further reduction
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. Yoda; E. Kitagawa; N. Shimomura; S. Fujita; M. Amano
Year: 2015
Document Type:
Challenges for high-density 16Gb ReRAM with 27nm technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:Scott Sills; Shuichiro Yasuda; Alessandro Calderoni; Christopher Cardon; Jonathan Strand; Katsuhisa Aratani; Nirmal Ramaswamy
Year: 2015
Document Type:
Low-power embedded ReRAM technology for IoT applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Ueki; K. Takeuchi; T. Yamamoto; A. Tanabe; N. Ikarashi; M. Saitoh; T. Nagumo; H. Sunamura; M. Narihiro; K. Uejima; K. Masuzaki; N. Furutake; S. Saito; Y. Yabe; A. Mitsuiki; K. Takeda; T. Hase; Y. Hayashi
Year: 2015
Document Type:
RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Albert Lee; Meng-Fan Chang; Chien-Chen Lin; Chien-Fu Chen; Mon-Shu Ho; Chia-Chen Kuo; Pei-Ling Tseng; Shyh-Shyuan Sheu; Tzu-Kun Ku
Year: 2015
Document Type:
Reliability enhancement of 1Xnm TLC for cold flash and millennium memories
Publisher: Japan Society of Applied Physics - JSAP
Authors:Senju Yamazaki; Shuhei Tanakamaru; Sakuya Suzuki; Tomoko Ogura Iwasaki; Shogo Hachiya; Ken Takeuchi
Year: 2015
Document Type:
Technology innovation in an IoT era
Publisher: Japan Society of Applied Physics - JSAP
Authors:An Steegen
Year: 2015
Document Type:
Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:D. Suzuki; M. Natsui; A. Mochizuki; S. Miura; H. Honjo; H. Sato; S. Fukami; S. Ikeda; T. Endoh; H. Ohno; T. Hanyu
Year: 2015
Document Type:
Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. H. Kulkarni; Z. Chen; B. Srinivasan; B. Pedersen; U. Bhattacharya; K. Zhang
Year: 2015
Document Type:
Holistic technology optimization and key enablers for 7nm mobile SoC
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. C. Song; J. Xu; N. N. Mojumder; K. Rim; D. Yang; J. Bao; J. Zhu; J. Wang; M. Badaroglu; V. Machkaoutsan; P. Narayanasetti; B. Bucki; J. Fischer; Geoffrey Yeap
Year: 2015
Document Type:
Active-lite interposer for 2.5 & 3D integration
Publisher: Japan Society of Applied Physics - JSAP
Authors:G. Hellings; M. Scholz; M. Detalle; D. Velenis; M. de Potter de ten Broeck; C. Roda Neve; Y. Li; S. Van Huylenbroek; S.-H Chen; E.-J Marinissen; A. La Manna; G. Van der Plas; D. Linten; E. Beyne; A. Thean
Year: 2015
Document Type:
An 82%-efficient multiphase voltage-regulator 3D interposer with on-chip magnetic inductors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kevin Tien; Noah Sturcken; Naigang Wang; Jae-woong Nah; Bing Dang; Eugene O'Sullivan; Paul Andry; Michele Petracca; Luca P. Carloni; William Gallagher; Kenneth Shepard
Year: 2015
Document Type:
15 dB conversion gain, 20 MHz carrier frequency AM receiver in flexible a-IGZO TFT technology with textile antennas
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Ishida; R. Shabanpour; T. Meister; B. K. Boroujeni; C. Carta; L. Petti; N. Munzenrieder; G. A. Salvatore; G. Troster; F. Ellinger
Year: 2015
Document Type:
Reconstruction of multiple-user voice commands using a hybrid system based on thin-film electronics and CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:L. Huang; J. Sanz-Robinson; T. Moy; Y. Hu; W. Rieutort-Louis; S. Wagner; J. C. Sturm; N. Verma
Year: 2015
Document Type:
System challenges and hardware requirements for future consumer devices: From wearable to ChromeBooks and devices in-between
Publisher: Japan Society of Applied Physics - JSAP
Authors:Eric Shiu; Simon Prakash
Year: 2015
Document Type:
Gate-all-around NWFETs vs. triple-gate FinFETs: Junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Veloso; G. Hellings; M. J. Cho; E. Simoen; K. Devriendt; V. Paraschiv; E. Vecchio; Z. Tao; J. J. Versluijs; L. Souriau; H. Dekkers; S. Brus; J. Geypen; P. Lagrain; H. Bender; G. Eneman; P. Matagne; A. De Keersgieter; W. Fang; N. Collaert; A. Thean
Year: 2015
Document Type:
Si nanowire CMOS fabricated with minimal deviation from RMG FinFET technology showing record performance
Publisher: Japan Society of Applied Physics - JSAP
Authors:Isaac Lauer; N. Loubet; S. D. Kim; J. A. Ott; S. Mignot; R. Venigalla; T. Yamashita; T. Standaert; J. Faltermeier; V. Basker; B. Doris; M. A. Guillorn
Year: 2015
Document Type:
Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by high-pressure deuterium anneal
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. Mertens; R. Ritzenthaler; H. Arimura; J. Franco; F. Sebaai; A. Hikavyy; B. J. Pawlak; V. Machkaoutsan; K. Devriendt; D. Tsvetanova; A. P. Milenin; L. Witters; A. Dangol; E. Vancoille; H. Bender; M. Badaroglu; F. Holsteyns; K. Barla; D. Mocuta; N. Horiguchi; A. V.-Y Thean
Year: 2015
Document Type:
MoS2 FET fabrication and modeling for large-scale flexible electronics
Publisher: Japan Society of Applied Physics - JSAP
Authors:Lili Yu; Dina El-Damak; Sungjae Ha; Shaloo Rakheja; Xi Ling; Jing Kong; Dimitri Antoniadis; Anantha Chandrakasan; Tomas Palacios
Year: 2015
Document Type:
RMG nMOS 1st process enabling 10x lower gate resistivity in N7 bulk FinFETs
Publisher: Japan Society of Applied Physics - JSAP
Authors:L.-A Ragnarsson; H. Dekkers; T. Schram; S. A. Chew; B. Parvais; M. Dehan; K. Devriendt; Z. Tao; F. Sebaai; C. Baerts; S. Van Elshocht; N. Yoshida; A. Phatak; C. Lazik; A. Brand; W. Clark; D. Fried; D. Mocuta; K. Barla; N. Horiguchi; A. V.-Y Thean
Year: 2015
Document Type:
High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. D. Giles; N. Arkali Radhakrishna; D. Becher; A. Kornfeld; K. Maurice; S. Mudanai; S. Natarajan; P. Newman; P. Packan; T. Rakshit
Year: 2015
Document Type:
High voltage I/O FinFET device optimization for 16nm system-on-a-chip (SoC) technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Miyashita; K. C. Kwong; P. H. Wu; B. C. Hsu; P. N. Chen; C. H. Tsai; M. C. Chiang; C. Y. Lin; S. Y. Wu
Year: 2015
Document Type:
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Yamashita; S. Mehta; V. S. Basker; R. Southwick; A. Kumar; R. Kambhampati; R. Sathiyanarayanan; J. Johnson; T. Hook; S. Cohen; J. Li; A. Madan; Z. Zhu; L. Tai; Y. Yao; P. Chinthamanipeta; M. Hopstaken; Z. Liu; D. Lu; F. Chen; S. Khan; D. Canaperi; B. Haran; J. Stathis; P. Oldiges; C.-H Lin; S. Narasimha; A. Bryant; W. K. Henson; S. Kanakasabapathy; K. V. R. M. Murali; T. Gow; D. McHerron; H. Bu; M. Khare
Year: 2015
Document Type:
Novel oxygen showering process (OSP) for extreme damage suppression of sub-20nm high density p-MTJ array without IBE treatment
Publisher: Japan Society of Applied Physics - JSAP
Authors:J. H. Jeong; T. Endoh
Year: 2015
Document Type:
10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. Honjo; H. Sato; S. Ikeda; S. Sato; T. Watanebe; S. Miura; T. Nasuno; Y. Noguchi; M. Yasuhira; T. Tanigawa; H. Koike; M. Muraguchi; M. Niwa; K. Ito; H. Ohno; T. Endoh
Year: 2015
Document Type:
An 8-bit Analog-to-Digital Converter based on the voltage-dependent switching probability of a Magnetic Tunnel Junction
Publisher: Japan Society of Applied Physics - JSAP
Authors:Won Ho Choi; Yang Lv; Hoonki Kim; Jian-Ping Wang; Chris H. Kim
Year: 2015
Document Type:
Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level
Publisher: Japan Society of Applied Physics - JSAP
Authors:Guenole Jan; Luc Thomas; Son Le; Yuan-Jen Lee; Huanlong Liu; Jian Zhu; Ru-Ying Tong; Keyu Pi; Yu-Jen Wang; Dongna Shen; Renren He; Jesmin Haq; Jeffrey Teng; Vinh Lam; Rao Annapragada; Tom Zhong; Terry Torng; Po-Kang Wang
Year: 2015
Document Type:
14nm FDSOI upgraded device performance for ultra-low voltage operation
Publisher: Japan Society of Applied Physics - JSAP
Authors:O. Weber; E. Josse; J. Mazurier; N. Degors; S. Chhun; P. Maury; S. Lagrasta; D. Barge; J.-P Manceau; M. Haond
Year: 2015
Document Type:
Novel single p+poly-Si/Hf/SiON gate stack technology on silicon-on-thin-buried-oxide (SOTB) for ultra-low leakage applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Yamamoto; H. Makiyama; T. Yamashita; H. Oda; S. Kamohara; N. Sugii; Y. Yamaguchi; T. Mizutani; M. Kobayashi; T. Hiramoto
Year: 2015
Document Type:
Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
Publisher: Japan Society of Applied Physics - JSAP
Authors:L. Czornomaz; E. Uccelli; M. Sousa; V. Deshpande; V. Djara; D. Caimi; M. D. Rossell; R. Erni; J. Fompeyrine
Year: 2015
Document Type:
High hole mobility front-gate InAs/InGaSb-OI single structure CMOS on Si
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Nishi; M. Yokoyama; H. Yokoyama; T. Hoshi; H. Sugiyama; M. Takenaka; S. Takagi
Year: 2015
Document Type:
An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch
Publisher: Japan Society of Applied Physics - JSAP
Authors:V. Djara; V. Deshpande; E. Uccelli; N. Daix; D. Caimi; C. Rossel; M. Sousa; H. Siegwart; C. Marchiori; J. M. Hartmann; K.-T Shiu; C.-W Weng; M. Krishnan; M. Lofaro; R. Steiner; D. Sadana; D. Lubyshev; A. Liu; L. Czornomaz; J. Fompeyrine
Year: 2015
Document Type:
A novel dichotomic programming algorithm applied to 3D NAND flash
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chih-Chang Hsieh; Hang-Ting Lue; Yung Chun Li; Ti-Wen Chen; Hsiang-Pang Li; Chih-Yuan Lu
Year: 2015
Document Type:
Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ho-Jung Kang; Nagyong Choi; Sung-Min Joe; Ji-Hyun Seo; Eunseok Choi; Sung-Kye Park; Byung-Gook Park; Jong-Ho Lee
Year: 2015
Document Type:
Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85°C-extrapolated 1016 endurance
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yu-Chien Chiu; Chun-Hu Cheng; Chun-Yen Chang; Min-Hung Lee; Hsiao-Hsuan Hsu; Shiang-Shiou Yen
Year: 2015
Document Type:
High performance, integrated 1T1R oxide-based oscillator: Stack engineering for low-power operation in neural network applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. A. Sharma; T. C. Jackson; M. Schulaker; C. Kuo; C. Augustine; J. A. Bain; H.-S P. Wong; S. Mitra; L. T. Pileggi; J. A. Weldon
Year: 2015
Document Type:
Quantitative endurance failure model for filamentary RRAM
Publisher: Japan Society of Applied Physics - JSAP
Authors:R. Degraeve; A. Fantini; Ph Roussel; L. Goux; A. Costantino; C. Y. Chen; S. Clima; B. Govoreanu; D. Linten; A. Thean; M. Jurczak
Year: 2015
Document Type:
High-performance low-leakage enhancement-mode high-K dielectric GaN MOSHEMTs for energy-efficient, compact voltage regulators and RF power amplifiers for low-power mobile SoCs
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. W. Then; L. A. Chow; S. Dasgupta; S. Gardner; M. Radosavljevic; V. R. Rao; S. H. Sung; G. Yang; R. S. Chau
Year: 2015
Document Type:
In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. L. Huang; S. W. Chang; M. K. Chen; C. H. Fan; H. T. Lin; C. H. Lin; R. L. Chu; K. Y. Lee; M. A. Khaderbad; Z. C. Chen; C. H. Lin; C. H. Chen; L. T. Lin; H. J. Lin; H. C. Chang; C. L. Yang; Y. K. Leung; Y.-C Yeo; S. M. Jang; H. Y. Hwang; Carlos H. Diaz
Year: 2015
Document Type:
Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for ultra-low power logic
Publisher: Japan Society of Applied Physics - JSAP
Authors:R. Pandey; H. Madan; H. Liu; V. Chobpattana; M. Barth; B. Rajamohanan; M. J. Hollander; T. Clark; K. Wang; J.-H Kim; D. Gundlach; K. P. Cheung; J. Suehle; R. Engel-Herbert; S. Stemmer; S. Datta
Year: 2015
Document Type:
Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs
Publisher: Japan Society of Applied Physics - JSAP
Authors:Arun V. Thathachary; N. Agrawal; K. K. Bhuwalka; M. Cantoro; Y.-C Heo; G. Lavallee; S. Maeda; S. Datta
Year: 2015
Document Type:
Device design guideline for steep slope ferroelectric FET using negative capacitance in sub-0.2V operation: Operation speed, material requirement and energy efficiency
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masaharu Kobayashi; Toshiro Hiramoto
Year: 2015
Document Type:
Silicon-compatible low resistance S/D technologies for high-performance top-gate self-aligned InGaZnO TFTs with UTBB (ultra-thin body and BOX) structures
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Ota; T. Irisawa; K. Sakuma; C. Tanaka; K. Ikeda; T. Tezuka; D. Matsushita; M. Saitoh
Year: 2015
Document Type:
30-nm-channel-length c-axis aligned crystalline In-Ga-Zn-O transistors with low off-state leakage current and steep subthreshold characteristics
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. Matsuda; T. Hiramatsu; R. Honda; D. Matsubayashi; H. Tomisu; Y. Kobayashi; K. Tochibayashi; R. Hodo; H. Fujiki; Y. Yamamoto; M. Tsubuku; Y. Okazaki; S. Yamazaki
Year: 2015
Document Type:
Energy efficient 1-transistor active pixel sensor (APS) with FD SOI tunnel FET
Publisher: Japan Society of Applied Physics - JSAP
Authors:Nilay Dagtekin; Adrian Mihai Ionescu
Year: 2015
Document Type:
Robotics for innovation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hirohisa Hirukawa
Year: 2015
Document Type:
A 14 nm SoC platform technology featuring 2nd generation Tri-Gate transistors, 70 nm gate pitch, 52 nm metal pitch, and 0.0499 um2 SRAM cells, optimized for low power, high performance and high density SoC products
Publisher: Japan Society of Applied Physics - JSAP
Authors:C.-H Jan; F. Al-amoody; H.-Y Chang; T. Chang; Y.-W Chen; N. Dias; W. Hafez; D. Ingerly; M. Jang; E. Karl; S. K.-Y Shi; K. Komeyli; H. Kilambi; A. Kumar; K. Byon; C.-G Lee; J. Lee; T. Leo; P.-C Liu; N. Nidhi; R. Olac-vaw; C. Petersburg; K. Phoa; C. Prasad; C. Quincy; R. Ramaswamy; T. Rana; L. Rockford; A. Subramaniam; C. Tsai; P. Vandervoorn; L. Yang; A. Zainuddin; P. Bai
Year: 2015
Document Type:
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Hayakawa; A. Himeno; R. Yasuhara; W. Boullart; E. Vecchio; T. Vandeweyer; T. Witters; D. Crotti; M. Jurczak; S. Fujii; S. Ito; Y. Kawashima; Y. Ikeda; A. Kawahara; K. Kawai; Z. Wei; S. Muraoka; K. Shimakawa; T. Mikawa; S. Yoneda
Year: 2015
Document Type:
High-mobility High-Ge-Content Si1−xGex-OI PMOS FinFETs with fins formed using 3D germanium condensation with Ge fraction up to x∼ 0.7, scaled EOT∼8.5Å and ∼10nm fin width
Publisher: Japan Society of Applied Physics - JSAP
Authors:P. Hashemi; T. Ando; K. Balakrishnan; J. Bruley; S. Engelmann; J. A. Ott; V. Narayanan; D.-G Park; R. T. Mo; E. Leobandung
Year: 2015
Document Type:
Design and demonstration of reliability-aware Ge gate stacks with 0.5 nm EOT
Publisher: Japan Society of Applied Physics - JSAP
Authors:C. Lu; C. H. Lee; T. Nishimura; A. Toriumi
Year: 2015
Document Type:
III–V and Ge/strained SOI tunneling FET technologies for low power LSIs
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. Takagi; M. Kim; M. Noguchi; S.-M Ji; K. Nishi; M. Takenaka
Year: 2015
Document Type:
Variation-tolerant dense TFET memory with low VMIN matching low-voltage TFET logic
Publisher: Japan Society of Applied Physics - JSAP
Authors:Daniel H. Morris; Uygar E. Avci; Ian A. Young
Year: 2015
Document Type:
Vertical device architecture for 5nm and beyond: Device & circuit implications
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. V.-Y Thean; D. Yakimets; T. Huynh Bao; P. Schuddinck; S. Sakhare; M. Garcia Bardon; A. Sibaja-Hernandez; I. Ciofi; G. Eneman; A. Veloso; J. Ryckaert; P. Raghavan; A. Mercha; A. Mocuta; Z. Tokei; D. Verkest; P. Wambacq; K. De Meyer; N. Collaert
Year: 2015
Document Type:
15-nm channel length MoS2 FETs with single- and double-gate structures
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Nourbakhsh; A. Zubair; S. Huang; X. Ling; M. S. Dresselhaus; J. Kong; S. De Gendt; T. Palacios
Year: 2015
Document Type:
A comparison of arsenic and phosphorus extension by Room Temperature and hot ion implantation for NMOS Si bulk-FinFET at N7 (7nm) technology relevant fin dimensions
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Sasaki; R. Ritzenthaler; A. De Keersgieter; T. Chiarella; S. Kubicek; E. Rosseel; A. Waite; J. del Agua Borniquel; B. Colombeau; S. A. Chew; M. S. Kim; T. Schram; S. Demuynck; W. Vandervorst; N. Horiguchi; D. Mocuta; A. Mocuta; A. V.-Y Thean
Year: 2015
Document Type:
AC NBTI of Ge pMOSFETs: Impact of energy alternating defects on lifetime prediction
Publisher: Japan Society of Applied Physics - JSAP
Authors:J. Ma; W. Zhang; J. F. Zhang; Z. Ji; B. Benbakhti; J. Franco; J. Mitard; L. Witters; N. Collaert; G. Groeseneken
Year: 2015
Document Type:
A test-proven As-grown-Generation (A-G) model for predicting NBTI under use-bias
Publisher: Japan Society of Applied Physics - JSAP
Authors:Z. Ji; J. F. Zhang; L. Lin; M. Duan; W. Zhang; X. Zhang; R. Gao; B. Kaczer; J. Franco; T. Schram; N. Horiguchi; S. De Gendt; G. Groeseneken
Year: 2015
Document Type:
Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hao Qiu; Tomoko Mizutani; Yoshiki Yamamoto; Hideki Makiyama; Tomohiro Yamashita; Hidekazu Oda; Shiro Kamohara; Nobuyuki Sugii; Takuya Saraya; Masaharu Kobayashi; Toshiro Hiramoto
Year: 2015
Document Type:
Further investigations on traps stabilities in random telegraph signal noise and the application to a novel concept physical unclonable function (PUF) with robust reliabilities
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jiezhi Chen; Tetsufumi Tanamoto; Hiroki Noguchi; Yuichiro Mitani
Year: 2015
Document Type:
High frequency AC electromigration lifetime measurements from a 32nm test chip
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chen Zhou; Xiaofei Wang; Rita Fung; Shi-Jie Wen; Rick Wong; Chris H. Kim
Year: 2015
Document Type:
A new integration technology platform: Integrated fan-out wafer-level-packaging for mobile applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Douglas Yu
Year: 2015
Document Type:
3DVLSI with CoolCube process: An alternative path to scaling
Publisher: Japan Society of Applied Physics - JSAP
Authors:P. Batude; C. Fenouillet-Beranger; L. Pasini; V. Lu; F. Deprat; L. Brunet; B. Sklenard; F. Piegas-Luce; M. Casse; B. Mathieu; O. Billoint; G. Cibrario; O. Turkyilmaz; H. Sarhan; S. Thuries; L. Hutin; S. Sollier; J. Widiez; L. Hortemel; C. Tabone; M.-P Samson; B. Previtali; N. Rambal; F. Ponthenier; J. Mazurier; R. Beneyton; M. Bidaud; E. Josse; E. Petitprez; O. Rozeau; M. Rivoire; C. Euvard-Colnat; A. Seignard; F. Fournel; L. Benaissa; P. Coudrain; P. Leduc; J.-M Hartmann; P. Besson; S. Kerdiles; C. Bout; F. Nemouchi; A. Royer; C. Agraffeil; G. Ghibaudo; T. Signamarcheix; M. Haond; F. Clermidy; O. Faynot; M. Vinet
Year: 2015
Document Type:
High performance low temperature activated devices and optimization guidelines for 3D VLSI integration of FD, TriGate, FinFET on insulator
Publisher: Japan Society of Applied Physics - JSAP
Authors:L. Pasini; P. Batude; M. Casse; B. Mathieu; B. Sklenard; F. Piegas Luce; S. Reboh; N. Bernier; C. Tabone; O. Rozeau; S. Martini; C. Fenouillet-Beranger; L. Brunet; G. Audoit; D. Lafond; F. Aussenac; F. Allain; G. Romano; S. Barraud; N. Rambal; V. Barral; L. Hutin; J.-M Hartmann; P. Besson; S. Kerdiles; M. Haond; G. Ghibaudo; M. Vinet
Year: 2015
Document Type:
Ultra fine-pitch TSV technology for ultra-dense high-Q RF inductors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wolfgang A. Vitale; Montserrat Fernandez-Bolanos; Armin Klumpp; Josef Weber; Peter Ramm; Adrian M. Ionescu
Year: 2015
Document Type:
Strained germanium quantum well p-FinFETs fabricated on 45nm Fin pitch using replacement channel, replacement metal gate and germanide-free local interconnect
Publisher: Japan Society of Applied Physics - JSAP
Authors:L. Witters; J. Mitard; R. Loo; S. Demuynck; S. A. Chew; T. Schram; Z. Tao; A. Hikavyy; J. W. Sun; A. P. Milenin; H. Mertens; C. Vrancken; P. Favia; M. Schaekers; H. Bender; N. Horiguchi; R. Langer; K. Barla; D. Mocuta; N. Collaert; A. V.-Y Thean
Year: 2015
Document Type:
First experimental demonstration of Ge 3D FinFET CMOS circuits
Publisher: Japan Society of Applied Physics - JSAP
Authors:Heng Wu; Wei Luo; Hong Zhou; Mengwei Si; Jingyun Zhang; Peide D. Ye
Year: 2015
Document Type:
Characterization of self-heating in high-mobility Ge FinFET pMOS devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:E. Bury; B. Kaczer; J. Mitard; N. Collaert; N. S. Khatami; Z. Aksamija; D. Vasileska; K. Raleva; L. Witters; G. Hellings; D. Linten; G. Groeseneken; A. Thean
Year: 2015
Document Type:
New industry standard FinFET compact model for future technology nodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sourabh Khandelwal; Juan P. Duarte; Aditya Medury; Y. S. Chauhan; Chenming Hu
Year: 2015
Document Type:
2.8-GB/s-write and 670-MB/s-erase operations of a 3D vertical chain-cell-type phase-change-memory array
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Kurotsuchi; Y. Sasago; H. Yoshitake; H. Minemura; Y. Anzai; Y. Fujisaki; T. Takahama; T. Takahashi; T. Mine; A. Shima; K. Fujisaki; T. Kobayashi
Year: 2015
Document Type:
Greater than 2-bits/cell MLC storage for ultra high density phase change memory using a novel sensing scheme
Publisher: Japan Society of Applied Physics - JSAP
Authors:J. Y. Wu; W. S. Khwa; M. H. Lee; H. P. Li; S. C. Lai; T. H. Su; M. L. Wei; T. Y. Wang; M. BrightSky; T. S. Chen; W. C. Chien; S. Kim; R. Cheek; H. Y. Cheng; E. K. Lai; Y. Zhu; H. L. Lung; C. Lam
Year: 2015
Document Type:
A 50-nm 1.2-V GexTe1−x/Sb2Te3 superlattice topological-switching random-access memory (TRAM)
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Tai; T. Ohyanagi; M. Kinoshita; T. Morikawa; K. Akita; M. Takato; H. Shirakawa; M. Araidai; K. Shiraishi; N. Takaura
Year: 2015
Document Type:
Operation fundamentals in 12Mb Phase Change Memory based on innovative Ge-rich GST materials featuring high reliability performance
Publisher: Japan Society of Applied Physics - JSAP
Authors:V. Sousa; G. Navarro; N. Castellani; M. Coue; O. Cueto; C. Sabbione; P. Noe; L. Perniola; S. Blonkowski; P. Zuliani; R. Annunziata
Year: 2015
Document Type:
A novel self-converging write scheme for 2-bits/cell phase change memory for Storage Class Memory (SCM) application
Publisher: Japan Society of Applied Physics - JSAP
Authors:W. C. Chien; Y. H. Ho; H. Y. Cheng; M. BrightSky; C. J. Chen; C. W. Yeh; T. S. Chen; W. Kim; S. Kim; J. Y. Wu; A. Ray; R. Bruce; Y. Zhu; H. Y. Ho; H. L. Lung; C. Lam
Year: 2015
Document Type:
Considerations for efficient contact resistivity reduction via Fermi Level depinning - impact of MIS contacts on 10nm node nMOSFET DC characteristics
Publisher: Japan Society of Applied Physics - JSAP
Authors:J. Borrel; L. Hutin; O. Rozeau; P. Batude; T. Poiroux; F. Nemouchi; M. Vinet
Year: 2015
Document Type:
Ultra-low contact resistivity with highly doped Si:P contact for nMOSFET
Publisher: Japan Society of Applied Physics - JSAP
Authors:C.-N Ni; X. Li; S. Sharma; K. V. Rao; M. Jin; C. Lazik; V. Banthia; B. Colombeau; N. Variam; A. Mayur; H. Chung; R. Hung; A. Brand
Year: 2015
Document Type:
Resistivity of copper interconnects beyond the 7 nm node
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Pyzyna; R. Bruce; M. Lofaro; H. Tsai; C. Witt; L. Gignac; M. Brink; M. Guillorn; G. Fritz; H. Miyazoe; D. Klaus; E. Joseph; K. P. Rodbell; C. Lavoie; D.-G Park
Year: 2015
Document Type:
Cu diffusion barrier: Graphene benchmarked to TaN for ultimate interconnect scaling
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ling Li; Xiangyu Chen; Ching-Hua Wang; Seunghyun Lee; Ji Cao; Susmit Singha Roy; Michael S. Arnold; H.-S Philip Wong
Year: 2015
Document Type:
Improved electromigration-resistance of Cu interconnects by graphene-based capping layer
Publisher: Japan Society of Applied Physics - JSAP
Authors:Seong Jun Yoon; Alexander Yoon; Wan Sik Hwang; Sung-Yool Choi; Byung Jin Cho
Year: 2015
Document Type:
Self-limited RRAM with ON/OFF resistance ratio amplification
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sung Hyun Jo; Tanmay Kumar; Cliff Zitlaw; Hagop Nazarian
Year: 2015
Document Type:
Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hongxin Yang; Minghua Li; Wei He; Yu Jiang; Kian Guan Lim; Wendong Song; Victor Yi-Qian Zhuo; Chun Chia Tan; Eng Keong Chua; Weijie Wang; Yi Yang; Rong Ji
Year: 2015
Document Type:
A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Publisher: Japan Society of Applied Physics - JSAP
Authors:B. Govoreanu; D. Crotti; S. Subhechha; L. Zhang; Y. Y. Chen; S. Clima; V. Paraschiv; H. Hody; C. Adelmann; M. Popovici; O. Richard; M. Jurczak
Year: 2015
Document Type:
A novel CBRAM integration using subtractive dry-etching process of Cu enabling high-performance memory scaling down to 10nm node
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Redolfi; L. Goux; N. Jossart; F. Yamashita; E. Nishimura; D. Urayama; K. Fujimoto; T. Witters; F. Lazzarino; M. Jurczak
Year: 2015
Document Type:
Technology evening panel discussion post scaling: What will be next? Tuesday, June 16, 20:00–22:00
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Advanced process technologies of 1S1R for high density cross point ReRAM
Publisher: Japan Society of Applied Physics - JSAP
Authors:Beom Yong Kim; Hyeong Soo Kim
Year: 2015
Document Type:
Trade-off of performance, reliability and cost of SCM/NAND flash hybrid SSD
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hirofumi Takishita; Sheyang Ning; Ken Takeuchi
Year: 2015
Document Type:
Additional charge trapping layer SONOS nonvolatile memory based on ultra-thin body poly-Si junctionless FinFET
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wei-Cheng Wang; Chien-Chih Chung; Ming-Hsien Chung; Cheng-Ping Wang; Yung-Chun Wu
Year: 2015
Document Type:
Understanding the underlying physics of superior endurance in Bi-layered TaOX-RRAM
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. D. Zhao; P. Huang; Z. Chen; C. Liu; H. T. Li; W. J. Ma; B. Gao; X. Y. Liu; J. F. Kang
Year: 2015
Document Type:
Variability suppression of FinFETs by smoothing sidewall roughness using ion beam etching technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Matsukawa; K. Endo; H. Akasaka; Y. Kamiya; M. Ikeda; K. Tsunekawa; T. Nakagawa; Y. X. Liu; M. Masahara
Year: 2015
Document Type:
sSOI relaxation by BOX creep technique for dual strain CMOS integration
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Bonnevialle; C. Le Royer; Y. Morand; S. Reboh; D. Rouchon; N. Bernier; B. Mathieu; C. Plantier; M. Vinet
Year: 2015
Document Type:
Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks
Publisher: Japan Society of Applied Physics - JSAP
Authors:Xiuyan Li; Takeaki Yajima; Tomonori Nishimura; Akira Toriumi
Year: 2015
Document Type:
Gate-stack engineering for self-aligned Ge-gate/SiO2/SiGe-channel Insta-MOS devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wei-Ting Lai; Kuo-Ching Yang; Po-Hsiang Liao; Thomas George; Pei-Wen Li
Year: 2015
Document Type:
Impact of H2, O2, and N2 anneals on atomic-scale surface flattening for 3-D Ge channel architecture
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yukinori Morita; Hiroyuki Ota; Meishoku Masahara; Tatsuro Maeda
Year: 2015
Document Type:
Experimental study of reliabilities in tri-gate nanowire transistor ~ What is main reliability issue in 3D transistor?
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kensuke Ota; Chika Tanaka; Daisuke Matsushita; Toshinori Numata; Masumi Saitoh
Year: 2015
Document Type:
Threshold voltage and current variability of extremely narrow silicon nanowire MOSFETs with width down to 2nm
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Mizutani; Y. Tanahashi; R. Suzuki; T. Saraya; M. Kobayashi; T. Hiramoto
Year: 2015
Document Type:
Performance of GAA poly-Si channel of junctionless field effect transistors with ultra-thin body
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yan-Bo Liu; Yi-Ruei Jhan; Cheng-Ping Wang; Yung-Chun Wu
Year: 2015
Document Type:
Invetigation of reconfigurable silicon nanowire Schottky Barrier transistors-based logic gate circuits and SRAM cell
Publisher: Japan Society of Applied Physics - JSAP
Authors:Juncheng Wang; Gang Du; Xiaoyan Liu
Year: 2015
Document Type:
Impacts of surface roughness scattering on hole mobility in germanium nanowires
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hajime Tanaka; Jun Suda; Tsunenobu Kimoto
Year: 2015
Document Type:
Single ion implantation of Ge donor impurity in silicon transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:E. Prati; Y. Chiba; M. Yano; K. Kumagai; M. Hori; G. Ferrari; T. Shinada; T. Tanii
Year: 2015
Document Type:
Impact of diffused donor-clusters near lead/channel boundary on high-temperature single-electron tunneling in narrow SOI-FETs
Publisher: Japan Society of Applied Physics - JSAP
Authors:D. Moraru; A. Samanta; Y. Takasu; K. Tyszka; T. Mizuno; R. Jablonski; M. Tabe
Year: 2015
Document Type:
The impact of single donor and donor-acceptor pair on electronic and transport properties of silicon nanostructures
Publisher: Japan Society of Applied Physics - JSAP
Authors:L. T. Anh; D. Moraru; M. Manoharan; M. Tabe; H. Mizuta
Year: 2015
Document Type:
Investigation of the impact of grain boundary on threshold voltage of 3-D MLC NAND flash memory
Publisher: Japan Society of Applied Physics - JSAP
Authors:Zhiyuan Lun; Lei Shen; Yingying Cong; Gang Du; Xiaoyan Liu; Yi Wang
Year: 2015
Document Type:
Resistive switching characteristics in HfOx memory devices with local electrical field design
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tsung-Kuei Kang; Wei-Len Chen; Yu-Han Chen; Pei-Hsun Tsai
Year: 2015
Document Type:
Position and number control of donor-QD potential by pattern-doping in SOI-FET channels
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Tyszka; D. Moraru; T. Mizuno; R. Jablonski; M. Tabe
Year: 2015
Document Type:
Nanodamascene metal-insulator-metal single electron transistor prepared by atomic layer deposition of tunnel barrier and subsequent reduction of metal surface oxide
Publisher: Japan Society of Applied Physics - JSAP
Authors:Golnaz Karbasian; Alexei O. Orlov; Gregory L. Snider
Year: 2015
Document Type:
Impacts of channel constriction dimensions of graphene single-carrier transistors on the coulomb diamond characteristics
Publisher: Japan Society of Applied Physics - JSAP
Authors:Takuya Iwasaki; Manoharan Muruganathan; Hiroshi Mizuta
Year: 2015
Document Type:
Series-triple quantum dots fabricated under each control gate by the use of thermal oxidation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Takafumi Uchida; Hikaru Sato; Atsushi Tsurumaki-Fukuchi; Masashi Arita; Akira Fujiwara; Yasuo Takahashi
Year: 2015
Document Type:
Fabrication and characterization of physically-defined double quantum dots without unintentional localized states on highly-doped silicon substrate
Publisher: Japan Society of Applied Physics - JSAP
Authors:Y. Yamaoka; T. Kodera; S. Oda
Year: 2015
Document Type:
Characterization of carrier dynamics in Ge quantum dots through Ge quantum-dot MOSFETs using pulsed voltage technique
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ming-Hao Kuo; Ho-Chane Chen; Wei-Ting Lai; Pei-Wen Li
Year: 2015
Document Type:
Simultaneous two gate reflectometric spectroscopy of Si coupled donor-dot system
Publisher: Japan Society of Applied Physics - JSAP
Authors:Xavier Jehl; Alexei O. Orlov; Romain Maurand; Patrick Fay; Gregory L. Snider; Sylvain Barraud; Marc Sanquer
Year: 2015
Document Type:
Fabrication of a highly controllable Si-MOS quantum dot device
Publisher: Japan Society of Applied Physics - JSAP
Authors:Takumu Honda; Jun Yoneda; Kenta Takeda; Tetsuo Kodera; Seigo Tarucha; Shunri Oda
Year: 2015
Document Type:
Tunneling field-effect transistor with a grown Si epitaxial layer for boosting ON current
Publisher: Japan Society of Applied Physics - JSAP
Authors:Junil Lee; Jang Hyun Kim; Dae Woong Kwon; Euyhwan Park; Tae Hyung Park; Byung-Gook Park
Year: 2015
Document Type:
Short-drain effect of 5 nm tunnel field-effect transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yu-Hsuan Chen; Nguyen Dang Chien; Jr-Jie Tsai; Yan-Xiang Luo; Chun-Hsing Shih
Year: 2015
Document Type:
Fabrication and characterization of silicon nanowire ultra-thin channel poly-Si junctionless field effect transistors with a trench structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ko-Wei Lin; Mu-Shih Yeh; Min-Hsin Wu; Yung-Chun Wu
Year: 2015
Document Type:
Hybrid channel poly-Si junctionless field-effect transistors with trench structure formed by dry etching process
Publisher: Japan Society of Applied Physics - JSAP
Authors:Cheng-Ping Wang; Yi-Ruei Jhan; Jun-Ji Su; Yung-Chun Wu
Year: 2015
Document Type:
Built-in effective body-bias effect in UTBB hetero-channel MOSFETs and its suppression
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chang-Hung Yu; Pin Su
Year: 2015
Document Type:
Boolean logic circuit implementaion using multi-input floating-body MOSFET
Publisher: Japan Society of Applied Physics - JSAP
Authors:Min-Woo Kwon; Hyungjin Kim; Jungjin Park; Byung-Gook Park
Year: 2015
Document Type:
Comparison of electrical characteristics of N-type silicon junctionless transistors with and without film profile engineering by TCAD simulation
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jung-Ruey Tsai; Horng-Chih Lin; Hsiu-Fu Chang; Bo-Shiuan Shie; Ting-Ting Wen; Tiao-Yuan Huang
Year: 2015
Document Type:
Thermodynamic stability of high phosphorus concentration in silicon nanostructures
Publisher: Japan Society of Applied Physics - JSAP
Authors:Michele Perego; Gabriele Seguini; Elisa Arduca; Jacopo Frascaroli; Davide De Salvador; Massimo Mastromatteo; Alberto Carnera; Giuseppe Nicotra; Mario Scuderi; Corrado Spinella; Giuliana Impellizzeri; Cristina Lenardi; Enrico Napolitani
Year: 2015
Document Type:
3D-TCAD simulation study of the novel T-FinFET structure for sub-14nm metal-oxide-semiconductor field-effect transistor
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chen-Han Chou; Chung-Chun Hsu; Steve S. Chung; Chao-Hsin Chien
Year: 2015
Document Type:
Characteristics of inversion, accumulation and junctionless mode silicon N-type and P-type bulk FinFETs with optimized 3-nm nano-fin structure
Publisher: Japan Society of Applied Physics - JSAP
Authors:Vasanthan Thirunavukkarasu; Yi-Ruei Jhan; Yan-Bo Liu; Yung-Chun Wu
Year: 2015
Document Type:
Bringing physics to device design — A fast and predictive device simulation framework
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Karner; Z. Stanojevic; F. Mitterbauer; C. Kernstock; H. Demel
Year: 2015
Document Type:
A capacitance-voltage model for DG-TFET
Publisher: Japan Society of Applied Physics - JSAP
Authors:Arnab Biswas; Adrian M. Ionescu
Year: 2015
Document Type:
Physics-based model for the conductive filament at the low resistance state of thin SiO2 films
Publisher: Japan Society of Applied Physics - JSAP
Authors:Rintaro Yamaguchi; Shingo Sato; Yasuhisa Omura
Year: 2015
Document Type:
Performance evaluation of Si ultra-thin body (1 nm) junctionless FET with LG = 1 nm and LG = 3 nm
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yi-Ruei Jhan; Yan-Bo Liu; Yung-Chun Wu
Year: 2015
Document Type:
Design and analysis of electric-field-assisted nonlocal silicon-channel spin devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:D. Kitagata; T. Akushichi; Y. Takamura; Y. Shuto; S. Sugahara
Year: 2015
Document Type:
Silicon-compatible resonant plasma-wave transistor with 2D silicene channel for high-performance terahertz electromagnetic wave emitters
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jong Yul Park; Sung-Ho Kim; Kyung Rok Kim
Year: 2015
Document Type:
Novel trigate field-plated poly-Si TFT with improved leakage current and high On/Off current ratio
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yong-Hong Syu; Hsin-Hui Hu; Jhen-Yu Tsai; Kai-Ming Wang; Jia-Jin Tsai
Year: 2015
Document Type:
Frequency-dependent response of nanoscale thermocouples using temperature oscillations produced by nanoscale heaters
Publisher: Japan Society of Applied Physics - JSAP
Authors:Gergo P. Szakmany; Alexei O. Orlov; Gary H. Bernstein; Wolfgang Porod
Year: 2015
Document Type:
New features in planar SiGe channel tunnel FETs performance and operation
Publisher: Japan Society of Applied Physics - JSAP
Authors:C. Le Royer; L. Hutin; S. Martinie; P. Nguyen; S. Barraud; F. Glowacki; S. Cristoloveanu; M. Vinet
Year: 2015
Document Type:
Design of complementary tilt-gate TFETs with SiGe/Si and III-V integrations feasible for ultra-low-power applications
Publisher: Japan Society of Applied Physics - JSAP
Authors:E. R. Hsieh; Y. S. Lin; Y. B. Zhao; C. H. Liu; C. H. Chien; Steve S. Chung
Year: 2015
Document Type:
Dopant-assisted tunnel-current enhancement in two-dimensional Esaki diodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. N. Tan; D. Moraru; K. Tyszka; A. Sapteka; S. Purwiyanti; L. T. Anh; M. Manoharan; T. Mizuno; R. Jablonski; D. Hartanto; H. Mizuta; M. Tabe
Year: 2015
Document Type:
Fabrication of high-quality Co2FeSi0.5Al0.5/CoFe/MgO/Si spin injectors for Si-channel spin devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Kondo; Y. Kawame; Y. Takamura; Y. Shuto; S. Sugahara
Year: 2015
Document Type:
Spin-based quantum computing in silicon
Publisher: Japan Society of Applied Physics - JSAP
Authors:Andrew Dzurak
Year: 2015
Document Type:
Variation of Coulomb diamonds and excited states caused by electric field in Si single-electron transistor
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hikaru Satoh; Takafumi Uchida; Atsushi Tsurumaki-Fukuchi; Masashi Arita; Akira Fujiwara; Yasuo Takahashi
Year: 2015
Document Type:
Study of charged island formation in nanoscale Si single-electron transistors using dual port reflectometric spectroscopy
Publisher: Japan Society of Applied Physics - JSAP
Authors:Alexei O. Orlov; Patrick Fay; Gregory L. Snider; Xavier Jehl; Romain Lavieville; Sylvain Barraud; Marc Sanquer
Year: 2015
Document Type:
Low temperature charge pumping in SOI gated PIN diode
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Watanabe; M. Hori; T. Saruwatari; A. Fujiwara; Y. Ono
Year: 2015
Document Type:
Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Iwasaki; T. Kodera; S. Oda
Year: 2015
Document Type:
Fluctuations and relaxation in graphene
Publisher: Japan Society of Applied Physics - JSAP
Authors:D. K. Ferry; B. Liu; R. Akis
Year: 2015
Document Type:
Low pull-in voltage graphene nanoelectromechanical switches
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Manoharan; T. Chikuba; N. Kanetake; J. Sun; H. Mizuta
Year: 2015
Document Type:
Challenges of 3D VLSI-CoolCubeTM process with p-Ge-OI and n-InGaAs-OI for ultimate CMOS nodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:F. Nemouchi; L. Hutin; H. Boutry; P. Rodriguez; E. Ghegin; J. Borrel; Y. Morand; S. Kerdiles; P. Batude; M. Vinet
Year: 2015
Document Type:
CMOS roadmap analysis from the perspective of III-V technology using MASTAR
Publisher: Japan Society of Applied Physics - JSAP
Authors:Gaspard Hiblot; Quentin Rafhay; Gabriel Mugny; Gerard Ghibaudo; Frederic Boeuf
Year: 2015
Document Type:
Effect of free carrier accumulation or depletion on zone-center vibrational mode in Ge
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shoichi Kabuyanagi; Tomonori Nishimura; Takeaki Yajima; Akira Toriumi
Year: 2015
Document Type:
N+/P shallow junction with high dopant activation and low contact resistivity fabricated by solid phase epitaxy method for Ge technology
Publisher: Japan Society of Applied Physics - JSAP
Authors:Pengqiang Liu; Ming Li; Xia An; Meng Lin; Yang Zhao; Bingxin Zhang; Xuyuan Xia; Ru Huang
Year: 2015
Document Type:
Evolution of small lasers and resonators
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yong-Hee Lee
Year: 2015
Document Type:
Emerging fibre technology for the petabit/s era
Publisher: Japan Society of Applied Physics - JSAP
Authors:D. J. Richardson
Year: 2015
Document Type:
Optical manipulation with two beam traps in microfluidic polymer systems
Publisher: Japan Society of Applied Physics - JSAP
Authors:Maria Khoury Arvelo; Marco Matteucci; Kristian Tolbol Serensen; Brian Bilenberg; Christoph Vannahme; Anders Kristensen; Kirstine Berg-Sorensen
Year: 2015
Document Type:
History and recent progress on LINBO3 modulators
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masayuki Izutsu
Year: 2015
Document Type:
DBR laser with over 20NM wavelength tuning range
Publisher: Japan Society of Applied Physics - JSAP
Authors:Song Liang; Liangshun Han; Lijun Qiao; Junjie Xu; Hongliang Zhu; Wei Wang
Year: 2015
Document Type:
Fabrication of photonic wires in LiNbO3 and their interest in nonlinear optics
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. P. De Micheli
Year: 2015
Document Type:
Silicon microring resonator-loaded Mach-Zhender modulator with interleaved PN junction
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hiroyuki Homma; Rajdeep Gautam; Taro Arakawa; Yasuo Kokubun
Year: 2015
Document Type:
High-resolution and simultaneous measurement along the depth direction using virtual phase conjugation for optical tomography
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yuta Goto; Atsushi Okamoto; Atsushi Shibukawa; Akihisa Tomita; Masanori Takabayashi
Year: 2015
Document Type:
In-vivo human skin imaging by monochromatic source optical coherence tomography
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kentaro Osawa; Hiroyuki Minemura; Daisuke Tomita; Tetsuya Shimanaka; Tomokazu Suzuki; Naoya Matsuura; Koichi Watanabe
Year: 2015
Document Type:
Ultra-thin multi-aperture depth monitoring camera modules with megapixel resolution
Publisher: Japan Society of Applied Physics - JSAP
Authors:A. Brauer; A. Bruckner; F. Wippermann; A. Oberdorster
Year: 2015
Document Type:
Dual beam single-mode vertical cavity surface emitting lasers using high-index contrast grating
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. Inoue; A. Matsutani; H. Ohtsuki; T. Miyashita; F. Koyama
Year: 2015
Document Type:
Speckle reduction using twin green laser diodes and oscillation of MEMS scanning mirror for pico-projector
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jae-Yong Lee; Tae-Ha Kim; Jong-Uk Bu; Young-Joo Kim
Year: 2015
Document Type:
Lasing in a ZnO membrane microcavity with designable shape fabricated by focused ion beam milling
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tsu-Chi Chang; Ying-Yu Lai; Yu-Hsun Chou; Tien-Chang Lu
Year: 2015
Document Type:
Parity-time optical metamaterial devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Zi Jing Wong; Liang Feng; Ren-Min Ma; Yuan Wang; Xiang Zhang
Year: 2015
Document Type:
Electrically driven surface plasmon polaritons circuits
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kyungmok Kwon; Kyunghan Choi; Jong-bum You; Juhyeon Shin; Kyoungsik Yu
Year: 2015
Document Type:
Tunable terahertz metamaterials based on ultra-subwavelength graphene-dielectric structures
Publisher: Japan Society of Applied Physics - JSAP
Authors:Liming Liu; Haroldo T. Hattori
Year: 2015
Document Type:
Fabrication and measurement of vertical split-ring resonators for light manipulation and metasurface
Publisher: Japan Society of Applied Physics - JSAP
Authors:Pin Chieh Wu; Wei-Lun Hsu; Wei Ting Chen; Yao-Wei Huang; Chun Yen Liao; Wei-Yi Tsai; Ai Qun Liu; Nikolay I. Zheludev; Greg Sun; Din Ping Tsai
Year: 2015
Document Type:
Photonic lanterns for mode division multiplexing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Sergio G. Leon-Saval
Year: 2015
Document Type:
Full mode analysis of vector components of degenerated LP modes in Few Mode Fibers from intensity profile through angled polarizer
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yasuo Kokubun; Tatsuhiko Watanabe; Kohei Morita; Ryo Kawata
Year: 2015
Document Type:
First demonstration of electrically controlled mode switching
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ryan Imansyah; Luke Himbele; Haisong Jiang; Kiichi Hamamoto
Year: 2015
Document Type:
1+ù8 Silicon-silica hybrid thermo-optic switch with multi-chip configuration based on optical phased array
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. Katayose; Y. Hashizume; M. Itoh
Year: 2015
Document Type:
Demonstration of magneto-optical switch with amorphous silicon waveguides on magneto-optic garnet
Publisher: Japan Society of Applied Physics - JSAP
Authors:Eiichi Ishida; Kengo Miura; Yuya Shoji; Tetsuya Mizumoto; Nobuhiko Nishiyama; Shigehisa Arai
Year: 2015
Document Type:
Microstructured organic semiconductors: Lasers sensors and visible light communications
Publisher: Japan Society of Applied Physics - JSAP
Authors:Guy L. Whitworth; Pavlos P. Manousiadis; Paulina Morawska; Shuyu Zhang; Graham A. Turnbull; Ifor D. W. Samuel
Year: 2015
Document Type:
Organic single-crystal light-emitting field-effect transistors
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shu Hotta
Year: 2015
Document Type:
Light emitting transistor for lasers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ebinazar B. Namdas
Year: 2015
Document Type:
Recent progress in organic electronics and photonics: A perspective on the future of organic devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jean-Luc Bredas
Year: 2015
Document Type:
Future prospects of organic and perovskite based solid-state lasers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Thomas Riedl
Year: 2015
Document Type:
Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes (LEDs)
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jong-In Shim; Dong-Soo Shin
Year: 2015
Document Type:
Graphene-covered microfiber for passive mode-locking at 1.55 ++m and 2 ++m
Publisher: Japan Society of Applied Physics - JSAP
Authors:Weijian Ni; Yu Wang; Shinji Yamashita
Year: 2015
Document Type:
Ultraviolet lasing from spherical ZnO microcrystal produced by laser ablation in air
Publisher: Japan Society of Applied Physics - JSAP
Authors:Daisuke Nakamura; Toshinobu Tanaka; Tatsuya Ikebuchi; Takeshi Ueyama; Fumiaki Nagasaki; Yuki Fujiwara; Mitsuhiro Higashihata; Hiroshi Ikenoue; Tatsuo Okada
Year: 2015
Document Type:
Large-scale garnet single crystal with high transparency in fiber laser operation wavelength
Publisher: Japan Society of Applied Physics - JSAP
Authors:Akiharu Funaki; Kazunori Kabayama; Takeshi Kizaki; Garcia Villora; Kiyoshi Shimamura
Year: 2015
Document Type:
Post deadline papers
Publisher: Japan Society of Applied Physics - JSAP
Year: 2015
Document Type:
Novel adjustment structure and method for InP-based Mach-Zehnder interferometer polarization splitter
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Watanabe; Y. Nasu; Y. Ohiso; R. Iga
Year: 2015
Document Type:
Single-trench waveguide TE-TM mode converter for GalnAsP/InP waveguide optical isolator
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kei Masuyama; Yuya Shoji; Tetsuya Mizumoto
Year: 2015
Document Type:
GaAsP tunable distributed Bragg reflector laser with ITO thin-film heater
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masahiro Uemukai; Toshiaki Suhara
Year: 2015
Document Type:
OPtical add-drop multiplexer integrating silicon waveguide optical circulators and Bragg reflector
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keita Kato; Yuya Shoji; Tetsuya Mizumoto
Year: 2015
Document Type:
Propagation characteristics for quantized Laguerre-Gauss beams using liquid crystal optical devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Aya Saito; Ayano Tanabe; Makoto Kurihara; Nobuyuki Hashimoto; Kayo Ogawa
Year: 2015
Document Type:
Optical duplicate system for satellite-ground laser communication: Reduction of the effects of atmospheric turbulence and simplification of the optical ground station
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tomoko Nakayama; Yoshihisa Takayama; Chiemi Fujikawa; Kashiko Kodate
Year: 2015
Document Type:
Influence of slow-light feedback on noise properties of VCSEL with a transverse coupled cavity
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hameeda R. Ibrahim; Moustafa Ahmed; Fumio Koyama
Year: 2015
Document Type:
Coupled-mode analysis of grating-position-shifted cavity-resonator-integrated guided-mode resonance filter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kosuke Asai; Kenji Kintaka; Junichi Inoue; Shogo Ura
Year: 2015
Document Type:
Complex response of cavity-resonator-integrated guided-mode resonance filter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hiroki Okuda; Junichi Inoue; Shogo Ura
Year: 2015
Document Type:
Design of efficient photo-elastic modulator using quasi-1D phononic crystal cavity
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ingi Kim; S. Iwamoto; Y. Arakawa
Year: 2015
Document Type:
Orbital angular momentum and polarization multiplexing in microholographic recording
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ryuichi Katayama
Year: 2015
Document Type:
Numerical simulations on 3D shift multiplexed self-referential holographic data storage: Shift multiplexing properties along z-axis
Publisher: Japan Society of Applied Physics - JSAP
Authors:Taisuke Eto; Masanori Takabayashi; Atsushi Okamoto; Masatoshi Bunsen; Takashi Okamoto
Year: 2015
Document Type:
Plasmonic energy nanofocusing for high-efficiency laser fusion ignition
Publisher: Japan Society of Applied Physics - JSAP
Authors:Katsuaki Tanabe
Year: 2015
Document Type:
Design and characterization of reading glasses with extended-depth-of-field
Publisher: Japan Society of Applied Physics - JSAP
Authors:Satoshi Furukawa; Shinichi Komatsu
Year: 2015
Document Type:
Microscopic Raman spectroscopy of graphene enhanced by gold nanoparticles and micro glass bead
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hisatomo Matsumura; Shin-ichiro Yanagiya; Hiroki Kishikawa; Nobuo Goto
Year: 2015
Document Type:
Electro-optic side-chain polymers containing adamantyl groups and high-hyperpolar chromophores via the Huisgen reaction and their optical properties
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shogo Takeuchi; Andrew M. Spring; Kazuhiro Yamamoto; Shiyoshi Yokoyama
Year: 2015
Document Type:
Synthesis and characterization of SB doped ZNO microspheres by pulsed laser ablation
Publisher: Japan Society of Applied Physics - JSAP
Authors:F. Nagasaki; T. Shimogaki; T. Tanaka; T. Ikebuchi; T. Ueyama; Y. Fujiwara; M. Higashihata; D. Nakamura; T. Okada
Year: 2015
Document Type:
Detection of high-refractive index media by a surface plasmon sensor using a one-dimensional metal diffraction grating
Publisher: Japan Society of Applied Physics - JSAP
Authors:S. Mito; A. Motogaito; H. Miyake; K. Hiramatsu
Year: 2015
Document Type:
Pulsed oscillation of organic dye (Coumarin6) VCSEL excited by blue LD
Publisher: Japan Society of Applied Physics - JSAP
Authors:Motoharu Tanizawa; Ryohei Takahashi; Takeo Maruyama; Koichi Iiyama
Year: 2015
Document Type:
Novel polymers for polymer light-emitting diodes
Publisher: Japan Society of Applied Physics - JSAP
Authors:Benjawan Somchob; Natsiri Wongsang; Somboon Sahasithiwat; Rukkiat Jitchati
Year: 2015
Document Type:
Temperature dependent luminescent characteristics of Eu2+-doped CaAl2Si2O8 blue phosphor
Publisher: Japan Society of Applied Physics - JSAP
Authors:Joo Hyun Lee; Woo Tae Hong; Ju Young Mun; Hyun Kyung Yang
Year: 2015
Document Type:
Orange-red light emitting europium doped calcium molybdate phosphor prepared by high energy ball milling method
Publisher: Japan Society of Applied Physics - JSAP
Authors:Woo Tae Hong; Joo Hyun Lee; Hyeong Il Jang; Sung Jun Park; Jung Sik Joo; Hyun Kyung Yang
Year: 2015
Document Type:
Foldable and electrically switchable polymer dispersed liquid crystal materials for holographic recording
Publisher: Japan Society of Applied Physics - JSAP
Authors:Wei-Chia Su; Kuan-Ting Kuo
Year: 2015
Document Type:
Effects of deposition temperature on the structural, optical, and electrical properties of hydrogenated of Ga-doped ZnO film
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jung-Ruey Tsai; Neng-Fu Shih; Rong-Hwei Yeh
Year: 2015
Document Type:
EQE response and photovoltaic performance of plasmonic silicon solar cells based on depositing with aluminum, indium, and silver nanoparticles
Publisher: Japan Society of Applied Physics - JSAP
Authors:Chia-Hua Hu; Wen-Jeng Ho; Chien-Wu Yeh; Yi-Yu Lee; Hong-Jhang Syu; Ching-Fuh Lin
Year: 2015
Document Type:
Dry etching for Germanium waveguides by using CHF3 inductively coupled plasma
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ahmad Syahrin Idris; Haisong Jiang; Kiichi Hamamoto
Year: 2015
Document Type:
Effect of laser exposure condition on formation of holographic memory by angle-multiplexing recording using liquid crystal composites
Publisher: Japan Society of Applied Physics - JSAP
Authors:Akifumi Ogiwara; Minoru Watanabe
Year: 2015
Document Type:
Effect of polymer concentration on selective reflection spectra in cholesteric liquid crystals
Publisher: Japan Society of Applied Physics - JSAP
Authors:Akifumi Ogiwara; Hiroshi Kakiuchida
Year: 2015
Document Type:
Emission wavelength selection for InGaAs quantum dots by anodic-aluminum-oxide membrane
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. S. Lay; J. Y. Hsing; K. Y. Chuang; T. E. Tzeng; K. L. Yang
Year: 2015
Document Type:
Metrology techniques for refractive microlenses and microlens array manufacturing
Publisher: Japan Society of Applied Physics - JSAP
Authors:Myun-Sik Kim; Lisa Allegre; Jonathan Sunarjo; Wilfried Noell; Reinhard Voelkel
Year: 2015
Document Type:
Improved extension of DOF performance by apodized wavefront coding
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Tsukasaki; S. Komatsu
Year: 2015
Document Type:
Development of optical biosensor based on photonic crystal made of TiO2 using liquid phase deposition
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keigo Aono; Shoma Aki; Kenji Sueyoshi; Hideaki Hisamoto; Tatsuro Endo
Year: 2015
Document Type:
Nanoimprinted two-dimensional photonic crystal for detection of fibrinogen using antigen-antibody reaction
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tatsuro Endo; Kenji Sueyoshi; Hideaki Hisamoto
Year: 2015
Document Type:
Densely multiplexed refractive index biosensors using lateral Bragg gratings on SOI
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Mendez Astudillo; H. Takahisa; H. Okayama; H. Nakajima
Year: 2015
Document Type:
Fabrication of gold-deposited plasmonic crystal based on nanoimprint lithography for label-free biosensing application
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kiichi Nishiguchi; Kenji Sueyoshi; Hideaki Hisamoto; Tatsuro Endo
Year: 2015
Document Type:
Non-overlapping lensless synthetic aperture digital holography
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. Yoshino; R. Suyama; T. Wakasugi; S. Komatsu
Year: 2015
Document Type:
A novel approach for the high speed 3D measurement using a linescan-based chromatic confocal microscopy
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kwang Soo Kim; Taejoong Kim; Changhoon Choi; Byeong Hwan Jeon
Year: 2015
Document Type:
Reflection-type fiber-optic multimode interference structure with rounded end-face: A temperature-sensing study
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shuji Taue; Tsuyoshi Takahashi; Hideki Fukano
Year: 2015
Document Type:
Virtual interferogram-generation algorithm for phase-shifting digital holography
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jin Nozawa; Atsushi Okamoto; Masataka Toda; Yasuyuki Kuno; Akihisa Tomita
Year: 2015
Document Type:
A fiber Bragg grating temperature sensor using a vertical-cavity surface-emitting laser with temperature stabilization
Publisher: Japan Society of Applied Physics - JSAP
Authors:Taichi Yamada; Satoshi Tsuchiya; Torn Mizunami
Year: 2015
Document Type:
One port ring refractive index sensor with attached sub-ring
Publisher: Japan Society of Applied Physics - JSAP
Authors:H. Takahisa; M. Tsutsui; M. M. Astudillo; H. Okayama; H. Nakajima
Year: 2015
Document Type:
Phase distribution measurement based on wavefront correction using tabu search
Publisher: Japan Society of Applied Physics - JSAP
Authors:Naoya Yoda; Shinichi Komatsu
Year: 2015
Document Type:
Measurements of fine-particle-size using the image processing of laser diffraction image
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kotaro Tsubaki
Year: 2015
Document Type:
Spectral-domain optical coherence tomography with a white light developed for optical device fabrication
Publisher: Japan Society of Applied Physics - JSAP
Authors:T. Nishi; N. Ozaki; H. Ohsato; E. Watanabe; N. Ikeda; Y. Sugimoto
Year: 2015
Document Type:
Liquid analytes filling process in suspended-core silica fibers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Tomas Nemecek; Matej Komanec; Stanislav Zvanovec
Year: 2015
Document Type:
Low-cost strategy for time delay adjustment of STED microscopy using digital oscilloscope
Publisher: Japan Society of Applied Physics - JSAP
Authors:Guk-Jong Choi; Won-Sup Lee; Geon Lim; Hyungbae Moon; Young-Pil Park; No-Cheol Park
Year: 2015
Document Type:
Charged iridium complexes for organic amine sensor application
Publisher: Japan Society of Applied Physics - JSAP
Authors:Witsanu Sombat; Kittiya Wongkhan; Rukkiat Jitchati
Year: 2015
Document Type:
Light field microscope for 3D profile measurement of micro-structured array
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yao Hu; Haibo Gao; Shizhu Yuan; Rui Shi
Year: 2015
Document Type:
Optimization of diffraction efficiency and coupling efficiency in spatial mode conversion for photonic cross connecter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yanfeng Zhao; Atsushi Okamoto; Tomokazu Oda; Akihisa Tomita; Masatoshi Bunsen; Satoshi Honma
Year: 2015
Document Type:
Mach-Zehnder interferometer Si structures with weighted sampled grating waveguides featuring FLC cladding
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kentaro Sakakibara; Yoshiki Hayama; Masayuki Takeda; Akifumi Kato; Katsumi Nakatsuhara
Year: 2015
Document Type:
Proposal of novel optical mode demultiplexer based on angled-multimode interference (a-MMI) waveguide
Publisher: Japan Society of Applied Physics - JSAP
Authors:Haisong Jiang; Toshimichi Oiwane; Kiichi Hamamoto
Year: 2015
Document Type:
Design of optical isolator with strip-loaded waveguide employing nonreciprocal guided-radiation mode conversion
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yukihiro Okada; Kouya Kobayashi; Yuya Shoji; Tetsuya Mizumoto; Hideki Yokoi
Year: 2015
Document Type:
Design criteria for wavelength independent MMI mode converter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Kazuhiro Tanabe; Yutaka Chaen; Ryosuke Sakata; Ryo Tanaka; Haisong Jiang; Kiichi Hamamoto
Year: 2015
Document Type:
Preliminarily propagation loss evaluation of core-top etched waveguide for step-core LP21 mode converter
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ryosuke Sakata; Kazuhiro Tanabe; Ryo Tanaka; Haisong Jiang; Kiichi Hamamoto
Year: 2015
Document Type:
The study of effects of hydrogen loading time to the photosensitivity in optical fiber in term of writing time
Publisher: Japan Society of Applied Physics - JSAP
Authors:Phimolphan Rutthongjan; Phaisarn Sudwilai; Ong-arj Tangmettajittakul
Year: 2015
Document Type:
Mechanical characteristics of MU-type MCF connector
Publisher: Japan Society of Applied Physics - JSAP
Authors:Katsuyoshi Sakaime; Ryo Nagase; Kengo Watanabe; Tsunetoshi Saito
Year: 2015
Document Type:
Robust waveguide beam splitter using shortcuts to adiabaticity
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hung-Ching Chung; Rui-Dan Wen; Xi Chen; Shuo-Yen Tseng
Year: 2015
Document Type:
An air-gap wire-grid polarizer with high optical performance in the visible region
Publisher: Japan Society of Applied Physics - JSAP
Authors:Mizuki Shinkawa; Yasuhiro Satoh; Atsushi Sakai
Year: 2015
Document Type:
Absorbance-meter constructed by PDMS
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hirokazu Higuchi; Hiroaki Nomada; Hiroaki Yoshioka; Kinichi Morita; Yuji Oki
Year: 2015
Document Type:
Light propagation characteristics in photonic crystal fiber with graded air hole diameters
Publisher: Japan Society of Applied Physics - JSAP
Authors:Hirohisa Yokota; Kazuki Yoneya; Keiichi Higuchi; Yoh Imai
Year: 2015
Document Type:
A low loss butt-joint connection by using a graded-index photonic crystal fiber
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keiichi Higuchi; Hirohisa Yokota; Kazuki Yoneya; Yoh Imai
Year: 2015
Document Type:
A stable packaged high-Q microfiber coil resonator
Publisher: Japan Society of Applied Physics - JSAP
Authors:Xuan-Yi Lu; Lon A. Wang
Year: 2015
Document Type:
Fabrication of domain inverted ridge waveguide in ion-sliced LiNbO3 for wavelength conversion devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Keisuke Tanaka; Toshiaki Suhara
Year: 2015
Document Type:
Numerical analyses of all-optical retiming switches using quasi-phase matched devices
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yutaka Fukuchi; Akihiro Enda; Masaru Yamamoto
Year: 2015
Document Type:
Memristive switching in planar devices based on vanadium dioxide thin films using near IR laser pulses
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jihoon Kim; Kyongsoo Park; Songhyun Jo; Bong-Jun Kim; Yong Wook Lee
Year: 2015
Document Type:
Fast wavelength stabilization of tunable lasers with the internal wavelength locker
Publisher: Japan Society of Applied Physics - JSAP
Authors:Ryoga Kimura; Yudai Tatsumoto; Kazuki Sakuma; Hirokazu Onji; Makoto Shimokozono; Hiroyuki Ishii; Kazutoshi Kato
Year: 2015
Document Type:
Dynamic characteristics of all-optical feedforward fast automatic gain control scheme for multicore erbium-doped fiber amplifiers
Publisher: Japan Society of Applied Physics - JSAP
Authors:K. Kitamura; K. Udagawa; H. Masuda
Year: 2015
Document Type:
Theoretical modelling of photon-photon resonance on active multimode interferometer laser diode toward 40Gbps
Publisher: Japan Society of Applied Physics - JSAP
Authors:Bingzhou Hong; Mohammad Nasir Uddin; Takuya Kitano; Akio Tajima; Haisong Jiang; Kiichi Hamamoto
Year: 2015
Document Type:
Wavelength stabilization within 0.05 GHz with photo-mixing technique and laser current controlling
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jun Tsuboi; Takeshi Kuboki; Kazutoshi Kato
Year: 2015
Document Type:
Hybrid thin silicon nitride and electro-optic polymer waveguide modulators
Publisher: Japan Society of Applied Physics - JSAP
Authors:Masaaki Ishino; Shiyoshi Yokoyama
Year: 2015
Document Type:
Characterization of ion implantation quantum well intermixing for carrier confinement of VCSEL
Publisher: Japan Society of Applied Physics - JSAP
Authors:Shouhei Moriwaki; Minora Saitou; Shougo Kunisada; Tomoyuki Miyamoto
Year: 2015
Document Type:
Demonstration of photon-photon resonance peak enhancement by waveguide design modification on active multimode interferometer laser diode
Publisher: Japan Society of Applied Physics - JSAP
Authors:Takuya Kitano; Mohammad Nasir Uddin; Bingzhou Hong; Akio Tajima; Haisong Jiang; Kiichi Hamamoto
Year: 2015
Document Type:
Emission properties of distributed-feedback plastic wavguide lasers fabricated with imprint lithography
Publisher: Japan Society of Applied Physics - JSAP
Authors:M. Nakazumi; K. Yamashita
Year: 2015
Document Type:
Synchronous THz wave combiner consisting of arrayed photomixers
Publisher: Japan Society of Applied Physics - JSAP
Authors:Jun Haruki; Kazuki Sakuma; Kazutoshi Kato
Year: 2015
Document Type:
Compact and robust phase stabilization system for high-frequency carrier generation using an integrated lightwave circuit
Publisher: Japan Society of Applied Physics - JSAP
Authors:Yuki Fujimura; Kazuki Sakuma; Shota Takeuchi; Kazutoshi Kato; Shintaro Hisatake; Tadao Nagatsuma
Year: 2015
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Wireless power transmission between a NIR VCSEL array and silicon solar cells
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