Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Minkyung Bae; Daeyoun Yun; Yongsik Kim; Dongsik Kong; Hyun Kwang Jeong; Woojoon Kim; Jaehyeong Kim; Inseok Hur; Dae Hwan Kim; Dong Myong Kim
Year: 2012
Hybrid Floating Gate Cell for Sub-20-nm NAND Flash Memory Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:P. Blomme; A. Cacciato; D. Wellekens; L. Breuil; M. Rosmeulen; G. S. Kar; S. Locorotondo; C. Vrancken; O. Richard; I. Debusschere; J. Van Houdt
Year: 2012
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in $\hbox{WSiO}_{X}$ Resistance Switching Device
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yong-En Syu; Ting-Chang Chang; Tsung-Ming Tsai; Geng-Wei Chang; Kuan-Chang Chang; Jyun-Hao Lou; Ya-Hsiang Tai; Ming-Jinn Tsai; Ying-Lang Wang; S. M. Sze
Year: 2012
Effect of Deposition Temperature of SiOx Passivation Layer on the Electrical Performance of a-IGZO TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sung-Hwan Choi; Min-Koo Han
Year: 2012
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFET
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Egard; L. Ohlsson; M. Arlelid; K.-M Persson; B. M. Borg; F. Lenrick; R. Wallenberg; E. Lind; Lars-Erik Wernersson
Year: 2012
A Low-Power Single-Clock-Driven Scan Driver Using Depletion-Mode a-IGZO TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Seung-Jin Yoo; Sung-Jin Hong; Jin-Seong Kang; Hai-Jung In; Oh-Kyong Kwon
Year: 2012
Phase-Change Memory With Multifin Thin-Film-Transistor Driver Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lin Li; Lining Zhang; Xinnan Lin; Jin He; Chi On Chui; Mansun Chan
Year: 2012
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Meneghini; C. de Santi; T. Ueda; T. Tanaka; D. Ueda; E. Zanoni; G. Meneghesso
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Special issue on advanced modeling of power devices and their applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
3rd International Symposium on Reliability of Optoelectronics for Space (ISROS 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Themed issue on thermoelectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 27 January 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Lift-Off Photolithographic Top-Contact OTFTs Using a Bilayer of PVA and SU8
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Soyoun Jung; Yeon Gyu Choo; Taeksoo Ji
Year: 2012
Evidence for a Very Small Tunneling Effective Mass (0.03 $m_{0}$) in MOSFET High-$k$ (HfSiON) Gate Dielectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ming-Jer Chen; Chih-Yu Hsu
Year: 2012
Characteristics of Thin-Film Transistors Fabricated on Fluorinated Zinc Oxide
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zhi Ye; Man Wong
Year: 2012
Abnormal Subthreshold Leakage Current at High Temperature in InGaZnO Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Geng-Wei Chang; Ting-Chang Chang; Jhe-Ciou Jhu; Tsung-Ming Tsai; Yong-En Syu; Kuan-Chang Chang; Ya-Hsiang Tai; Fu-Yen Jian; Ya-Chi Hung
Year: 2012
LDMOS Transistor High-Frequency Performance Enhancements by Strain
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Kun-Ming Chen; Guo-Wei Huang; Bo-Yuan Chen; Chia-Sung Chiu; Chih-Hua Hsiao; Wen-Shiang Liao; Ming-Yi Chen; Yu-Chi Yang; Kai-Li Wang; Chee Wee Liu
Year: 2012
Hybrid $C$$V$ and $I$$V$ Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hagyoul Bae; Inseok Hur; Ja Sun Shin; Daeyoun Yun; Euiyoun Hong; Keum-Dong Jung; Mun-Soo Park; Sunwoong Choi; Won Hee Lee; Mihee Uhm; Dae Hwan Kim; Dong Myong Kim
Year: 2012
Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap Density
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Min-Cheng Chen; Chia-Yi Lin; Bo-Yuan Chen; Chang-Hsien Lin; Guo-Wei Huang; Chia-Hua Ho; Tahui Wang; Chenming Hu; Fu-Liang Yang
Year: 2012
Resistive Switching in $\hbox{TiO}_{2}$ Thin Films Using the Semiconducting In-Ga-Zn-O Electrode
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jun Yeong Seok; Gun Hwan Kim; Jeong Hwan Kim; Un Ki Kim; Yoon Jang Chung; Seul Ji Song; Jung Ho Yoon; Kyung Jin Yoon; Min Hwan Lee; Kyung Min Kim; Cheol Seong Hwang
Year: 2012
New Investigation Possibilities on Forward Biased Power Devices Using Cross Sections
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Kociniewski; J. Moussodji; Z. Khatir; M. Berkani; S. Lefebvre; S. Azzopardi
Year: 2012
Highly Reliable Depletion-Mode a-IGZO TFT Gate Driver Circuits for High-Frequency Display Applications Under Light Illumination
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Binn Kim; Hyung Nyuck Cho; Woo Seok Choi; Seung-Hee Kuk; Yong Ho Jang; Juhn-Suk Yoo; Soo Young Yoon; Myungchul Jun; Yong-Kee Hwang; Min-Koo Han
Year: 2012
Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae-Hoon Lee; Jae-Hyun Jeong; Jung-Hee Lee
Year: 2012
$\hbox{InGaP/GaAs}_{0.57}\hbox{P}_{0.28} \hbox{Sb}_{0.15}/\hbox{GaAs}$ Double HBT With Weakly Type-II Base/Collector Junction
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yu-Chung Chin; Hao-Hsiung Lin; Chao-Hsing Huang
Year: 2012
Variability Origins of Parasitic Resistance in FinFETs With Silicided Source/Drain
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Matsukawa; Yongxun Liu; K. Endo; J. Tsukada; Y. Ishikawa; H. Yamauchi; S. O'uchi; K. Sakamoto; M. Masahara
Year: 2012
$\hbox{GaAs/In}_{0.5}\hbox{Ga}_{0.5}\hbox{P}$ Laser Power Converter With Undercut Mesa for Simultaneous High-Speed Data Detection and DC Electrical Power Generation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jin-Wei Shi; Cheng-Yo Tsai; Chan-Shan Yang; Feng-Ming Kuo; Yue-Ming Hsin; J. E. Bowers; Ci-Ling Pan
Year: 2012
In-Plane-Gate Oxide-Based Thin-Film Transistors Self-Aligned on Stacked Self-Assembled Monolayer/$\hbox{SiO}_{2}$ Electrolyte Dielectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Guodong Wu; Hongliang Zhang; Liqiang Zhu; Mingzhi Dai; Ping Cui; Qing Wan
Year: 2012
A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:X. A. Tran; W. G. Zhu; B. Gao; J. F. Kang; W. J. Liu; Z. Fang; Z. R. Wang; Y. C. Yeo; B. Y. Nguyen; M. F. Li; H. Y. Yu
Year: 2012
A Thermocouple-Based Self-Heating RF Power Sensor With GaAs MMIC-Compatible Micromachining Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zhiqiang Zhang; Xiaoping Liao
Year: 2012
Hollow Square- and Ring-Plate MEMS Oscillators Embedded in a Phase-Locked Loop for Low Limit of Detection in Liquid
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:G. Blanco-Gomez; E. Trioux; V. Agache
Year: 2012
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sen Huang; Qimeng Jiang; Shu Yang; Chunhua Zhou; K. J. Chen
Year: 2012
An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III–V NMOS
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. Oxland; S. W. Chang; Xu Li; S. W. Wang; G. Radhakrishnan; W. Priyantha; M. J. H. van Dal; C. H. Hsieh; G. Vellianitis; G. Doornbos; K. Bhuwalka; B. Duriez; I. Thayne; R. Droopad; M. Passlack; C. H. Diaz; Y. C. Sun
Year: 2012
A Two-Mask Process for Fabrication of Bottom-Gate IGZO-Based TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyun-Seok Uhm; Sang-Hyuk Lee; Won Kim; Jin-Seok Park
Year: 2012
Quaternary Enhancement-Mode HFET With In Situ SiN Passivation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Ketteniss; H. Behmenburg; H. Hahn; A. Noculak; B. Hollander; H. Kalisch; M. Heuken; A. Vescan
Year: 2012
On an Ammonia Gas Sensor Based on a Pt/AlGaN Heterostructure Field-Effect Transistor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tai-You Chen; Huey-Ing Chen; Chi-Shiang Hsu; Chien-Chang Huang; Chung-Fu Chang; Po-Cheng Chou; Wen-Chau Liu
Year: 2012
Super-High-Frequency SAW Resonators on AlN/Diamond
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. G. Rodriguez-Madrid; G. F. Iriarte; J. Pedros; O. A. Williams; D. Brink; F. Calle
Year: 2012
In Situ Co/SiC(N,H) Capping Layers for Cu/Low- k Interconnects
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:C.-C Yang; B. Li; H. Shobha; S. Nguyen; A. Grill; W. Ye; J. AuBuchon; M. Shek; D. Edelstein
Year: 2012
Defect Loss: A New Concept for Reliability of MOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Duan; J. F. Zhang; Z. Ji; W. Zhang; B. Kaczer; S. De Gendt; G. Groeseneken
Year: 2012
Correlation Between Oxide Trap Generation and Negative-Bias Temperature Instability
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. A. Boo; D. S. Ang; Z. Q. Teo; K. C. Leong
Year: 2012
Internal Temperature Extraction in Phase-Change Memory Cells During the Reset Operation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Boniardi; A. Redaelli; I. Tortorelli; F. Pellizzer; A. Pirovano
Year: 2012
Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yang Yin Chen; L. Goux; J. Swerts; M. Toeller; C. Adelmann; J. Kittl; M. Jurczak; G. Groeseneken; D. J. Wouters
Year: 2012
Comparative Study of Active-Over-Metal and Metal-Over-Active Amorphous IGZO Thin-Film Transistors With Low-Frequency Noise Measurements
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Tsormpatzoglou; N. A. Hastas; S. Khan; M. Hatalis; C. A. Dimitriadis
Year: 2012
Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hui Fang; S. Chuang; K. Takei; Ha Sul Kim; E. Plis; Chin-Hung Liu; S. Krishna; Yu-Lun Chueh; A. Javey
Year: 2012
RF Planar Inductor Electrical Performances on n-Type Porous 4H Silicon Carbide
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:G. Gautier; M. Capelle; J. Billoue; F. Cayrel; P. Poveda
Year: 2012
RF High-Power Operation of AlGaN/GaN HEMTs Epitaxially Grown on Diamond
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:K. Hirama; M. Kasu; Y. Taniyasu
Year: 2012
A Novel SONOS Memory With Recessed-Channel Poly-Si TFT via Excimer Laser Crystallization
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:I-Che Lee; Chun-Chien Tsai; Hsu-Hang Kuo; Po-Yu Yang; Chao-Lung Wang; Huang-Chung Cheng
Year: 2012
Improvement in Electrical and Optical Performances of GaN-Based LED With $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Double Dielectric Stack Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chung-Mo Yang; Dong-Seok Kim; Seong-Gil Lee; Jae-Hoon Lee; Yong Soo Lee; Jung-Hee Lee
Year: 2012
Planar InAs/AlSb HEMTs With Ion-Implanted Isolation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:G. Moschetti; P-A Nilsson; A. Hallen; L. Desplanque; X. Wallart; J. Grahn
Year: 2012
Very Fast and Primingless Single-Crystal-Diamond X-Ray Dosimeters
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. M. Trucchi; P. Allegrini; P. Calvani; A. Galbiati; K. Oliver; G. Conte
Year: 2012
$\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Han Liu; P. D. Ye
Year: 2012
Selective-Area High-Quality Germanium Growth for Monolithic Integrated Optoelectronics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyun-Yong Yu; Jin-Hong Park; A. K. Okyay; K. C. Saraswat
Year: 2012
Blue-Light-Sensitive Phototransistor for Indirect X-Ray Image Sensors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. R. Esmaeili-Rad; N. P. Papadopoulos; M. Bauza; A. Nathan; W. S. Wong
Year: 2012
Rapid Prediction of RRAM RESET-State Disturb by Ramped Voltage Stress
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wun-Cheng Luo; Kuan-Liang Lin; Jiun-Jia Huang; Chung-Lun Lee; Tuo-Hung Hou
Year: 2012
High Signal-to-Noise Ratio Avalanche Photodiodes With Perimeter Field Gate and Active Readout
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Dandin; P. Abshire
Year: 2012
Efficient Boron Doping in the Back Surface Field of Crystalline Silicon Solar Cells via Alloyed-Aluminum–Boron Paste
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Guoping Du; Bin Chen; Nan Chen; Ruiyi Hu
Year: 2012
Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chien-Hung Wu; Kow-Ming Chang; Sung-Hung Huang; I-Chung Deng; Chin-Jyi Wu; Wei-Han Chiang; Chia-Chiang Chang
Year: 2012
Operation Voltage Control in Complementary Resistive Switches Using Heterodevice
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Daeseok Lee; Jubong Park; Seungjae Jung; Godeuni Choi; Joonmyoung Lee; Seonghyun Kim; Jiyong Woo; M. Siddik; Eujun Cha; Hyunsang Hwang
Year: 2012
Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ming Li; Haiou Li; Chak Wah Tang; Kei May Lau
Year: 2012
The Peer-Review Process and EDS Golden List of Reviewers
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Samar K. Saha
Year: 2012
MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 $\Omega\cdot\hbox{mm}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jia Guo; Guowang Li; F. Faria; Yu Cao; Ronghua Wang; J. Verma; Xiang Gao; Shiping Guo; E. Beam; A. Ketterson; M. Schuette; P. Saunier; M. Wistey; D. Jena; Huili Xing
Year: 2012
InP HBT Transferred to Higher Thermal Conductivity Substrate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. W. Scott; C. Monier; Sujane Wang; V. Radisic; Phuong Nguyen; A. Cavus; W. R. Deal; A. Gutierrez-Aitken
Year: 2012
High-Reliability Trigate Poly-Si Channel Flash Memory Cell With Si-Nanocrystal Embedded Charge-Trapping Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hung-Bin Chen; Yung-Chun Wu; Lun-Chun Chen; Ji-Hong Chiang; Chao-Kan Yang; Chun-Yen Chang
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 29 February 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special issue on advanced modeling of power devices and their applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
3rd International Symposium on Reliability of Optoelectronics for Space (ISROS 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Themed issue on thermoelectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE Compound Semiconductor IC Symposium
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2011 conference advance program
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 EDS J.J. Ebers Award Call for Nominations
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Performance of AlGaSb/InAs TFETs With Gate Electric Field and Tunneling Direction Aligned
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yeqing Lu; Guangle Zhou; Rui Li; Qingmin Liu; Qin Zhang; T. Vasen; Soo Doo Chae; T. Kosel; M. Wistey; Huili Xing; A. Seabaugh; P. Fay
Year: 2012
Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:K. Akarvardar; M. Rodgers; V. Kaushik; C. S. Johnson; Hyuncher Chong; Injo Ok; Kah-Wee Ang; S. Gausepohl; C. Hobbs; P. Kirsch; R. Jammy
Year: 2012
On the Ink Jetting of Full Front Ag Gridlines for Cost-Effective Metallization of Si Solar Cells
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Ebong; I. B. Cooper; B. Rounsaville; A. Rohatgi; M. Dovrat; E. Kritchman; D. Brusilovsky; A. Benichou
Year: 2012
Ultrathin Body GaN-on-Insulator Quantum Well FETs With Regrown Ohmic Contacts
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Guowang Li; Ronghua Wang; Jia Guo; J. Verma; Zongyang Hu; Yuanzheng Yue; F. Faria; Yu Cao; M. Kelly; T. Kosel; Huili Xing; D. Jena
Year: 2012
Transparent IGZO-Based Logic Gates
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Haojun Luo; P. Wellenius; L. Lunardi; J. F. Muth
Year: 2012
Dopant Segregation and Nickel Stanogermanide Contact Formation on $\hbox{p}^{+} \hbox{Ge}_{0.947}\hbox{Sn}_{0.053}$ Source/Drain
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Genquan Han; Shaojian Su; Qian Zhou; Pengfei Guo; Yue Yang; Chunlei Zhan; Lanxiang Wang; Wei Wang; Qiming Wang; Chunlai Xue; Buwen Cheng; Yee-Chia Yeo
Year: 2012
Simulation Study of Dominant Statistical Variability Sources in 32-nm High- $\kappa$/Metal Gate CMOS
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xingsheng Wang; G. Roy; O. Saxod; A. Bajolet; A. Juge; A. Asenov
Year: 2012
Percolative Model and Thermodynamic Analysis of Oxygen-Ion-Mediated Resistive Switching
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Raghavan; K. L. Pey; Xing Wu; Wenhu Liu; M. Bosman
Year: 2012
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. Schleeh; G. Alestig; J. Halonen; A. Malmros; B. Nilsson; P. A. Nilsson; J. P. Starski; N. Wadefalk; H. Zirath; J. Grahn
Year: 2012
CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Van Hove; S. Boulay; S. R. Bahl; S. Stoffels; Xuanwu Kang; D. Wellekens; K. Geens; A. Delabie; S. Decoutere
Year: 2012
Multipactor in a Coaxial Line Under the Presence of an Axial DC Magnetic Field
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. Gonzalez-Iglesias; A. M. Perez; S. Anza; J. Vague; B. Gimeno; V. E. Boria; D. Raboso; C. Vicente; J. Gil; F. Caspers; L. Conde
Year: 2012
A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:E. A. G. Webster; J. A. Richardson; L. A. Grant; D. Renshaw; R. K. Henderson
Year: 2012
Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Shurong Dong; Hao Jin; Meng Miao; Jian Wu; J. J. Liou
Year: 2012
Switching Characteristics of $\hbox{Ru/HfO}_{2} \hbox{/TiO}_{2-x}\hbox{/Ru}$ RRAM Devices for Digital and Analog Nonvolatile Memory Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:B. Long; Yibo Li; R. Jha
Year: 2012
Improved Vertical Silicon Nanowire Based Thermoelectric Power Generator With Polyimide Filling
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yida Li; K. Buddharaju; Bui Cong Tinh; N. Singh; Sung Joo Lee
Year: 2012
ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type $\hbox{ZnCo}_{2}\hbox{O}_{4}$ Gate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. Schein; H. von Wenckstern; H. Frenzel; M. Grundmann
Year: 2012
Temperature Dependences of $I$$V$ Characteristics of SD and LDD Poly-Si TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Kimura; J. Taya; A. Nakashima
Year: 2012
An L-Shaped Trench SOI-LDMOS With Vertical and Lateral Dielectric Field Enhancement
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zhigang Wang; Bo Zhang; Qiang Fu; Gang Xie; Zhaoji Li
Year: 2012
Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chih-Lung Lin; Mao-Hsun Cheng; Chun-Da Tu; Min-Chin Chuang
Year: 2012
LTPS-TFT Pixel Circuit to Compensate for OLED Luminance Degradation in Three-Dimensional AMOLED Display
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chih-Lung Lin; Wen-Yen Chang; Chia-Che Hung; Chun-Da Tu
Year: 2012
Improved Switching Variability and Stability by Activating a Single Conductive Filament
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jubong Park; Seungjae Jung; Wootae Lee; Seonghyun Kim; Jungho Shin; Daeseok Lee; Jiyong Woo; Hyunsang Hwang
Year: 2012
Experimental Investigation of Thermally Induced Nonlinearities in Aluminum Nitride Contour-Mode MEMS Resonators
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Tazzoli; M. Rinaldi; G. Piazza
Year: 2012
Effect of Optical Phonon Scattering on the Performance of GaN Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tian Fang; Ronghua Wang; Huili Xing; S. Rajan; Debdeep Jena
Year: 2012
Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Sasikumar; A. Arehart; S. Kolluri; M. H. Wong; S. Keller; S. P. DenBaars; J. S. Speck; U. K. Mishra; S. A. Ringel
Year: 2012
Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Gang Xie; E. Xu; Junmin Lee; N. Hashemi; Bo Zhang; F. Y. Fu; Wai Tung Ng
Year: 2012
Flexible X-Ray Detector Array Fabricated With Oxide Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. A. Lujan; R. A. Street
Year: 2012
Low-Temperature Fabrication and Characteristics of Lanthanum Indium Zinc Oxide Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae Chul Park; Sang Wook Kim; Chang Jung Kim; Ho-Nyeon Lee
Year: 2012
Vertical Graphene Base Transistor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:W. Mehr; J. Dabrowski; J. C. Scheytt; G. Lippert; Ya-Hong Xie; M. C. Lemme; M. Ostling; G. Lupina
Year: 2012
Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Myungwoo Son; Xinjun Liu; S. M. Sadaf; Daeseok Lee; Sangsu Park; Wootae Lee; Seonghyun Kim; Jubong Park; Jungho Shin; Seungjae Jung; Moon-Ho Ham; Hyunsang Hwang
Year: 2012
Polycrystalline-Si TFT TANOS Flash Memory Cell With Si Nanocrystals for High Program/Erase Speed and Good Retention
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Min-Feng Hung; Yung-Chun Wu; Shun-Cheng Tien; Jiang-Hung Chen
Year: 2012
Bias-Induced Hole Mobility Increase in Narrow [111] and [110] Si Nanowire Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Neophytou; H. Kosina
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 28 March 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
38th IEEE Photovoltaic Specialists Conference
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE Bipolar/Bicmos Circuits and Technology Meeting (BCTM)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special issue on advanced modeling of power devices and their applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
3rd International Symposium on Reliability of Optoelectronics for Space (ISROS 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Themed issue on thermoelectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Charge-Carrier Velocity Distributions in High-Mobility Polymer Dual-Gate Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tae-Jun Ha; P. Sonar; A. Dodabalapur
Year: 2012
p-Type Electrical Transport of Chemically Doped Epitaxial Graphene Nanoribbons
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. E. Bryan; K. Brenner; Yinxiao Yang; R. Murali; J. D. Meindl
Year: 2012
Diffusion of Water Molecules in Amorphous Silica
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Kostinski; R. Pandey; S. Gowtham; U. Pernisz; A. Kostinski
Year: 2012
InGaAs/InP Tunnel FETs With a Subthreshold Swing of 93 mV/dec and $I_{\rm ON}/I_{\rm OFF}$ Ratio Near $\hbox{10}^{6}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Guangle Zhou; Yeqing Lu; Rui Li; Qin Zhang; Qingmin Liu; T. Vasen; Haijun Zhu; Jenn-Ming Kuo; T. Kosel; M. Wistey; P. Fay; A. Seabaugh; Huili Xing
Year: 2012
A Gate-Dielectric-Last Process via Photosolidification of Liquid Resin
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jin-Woo Han; Yang-Kyu Choi; M. Meyyappan
Year: 2012
Bidirectional Devices for Automotive-Grade Electrostatic Discharge Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. A. Salcedo; J-J Hajjar; S. Malobabic; J. J. Liou
Year: 2012
Voltage Ramp Stress for Hot-Carrier Screening of Scaled CMOS Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Kerber; W. McMahon; E. Cartier
Year: 2012
A Comparison of Short-Channel Control in Planar Bulk and Fully Depleted Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. Muralidhar; Jin Cai; I. Lauer; K. Chan; P. Kulkarni; Young-Hee Kim; Zhibin Ren; Dae-Gyu Park; P. Oldiges; G. Shahidi
Year: 2012
On an Electroless Plating (EP)-Based Pd/AlGaN/GaN Heterostructure Field-Effect Transistor (HFET)-Type Hydrogen Gas Sensor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chien-Chang Huang; Huey-Ing Chen; Tai-You Chen; Chi-Shiang Hsu; Chun-Chia Chen; Po-Cheng Chou; Jian-Kai Liou; Wen-Chau Liu
Year: 2012
Electroplated Ni-CNT Nanocomposite for Micromechanical Resonator Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yi-Chia Lee; Ming-Huang Li; Y. T. Cheng; Wensyang Hsu; Sheng-Shian Li
Year: 2012
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. J. Denninghoff; S. Dasgupta; Jing Lu; S. Keller; U. K. Mishra
Year: 2012
Enhanced Field Electron Emission From Zinc-Doped CuO Nanowires
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tsung-Ying Tsai; Cheng-Liang Hsu; Shoou-Jinn Chang; Szu-I Chen; Han-Ting Hsueh; Ting-Jen Hsueh
Year: 2012
Fabrication of Sensitivity Tunable Flexible Force Sensor via Spray Coating of Graphite Ink
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Akter; J. Joseph; W. S. Kim
Year: 2012
Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae Chul Park; Ho-Nyeon Lee
Year: 2012
Broadband Root-Mean-Square Detector in CMOS for On-Chip Measurements of Millimeter-Wave Voltages
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chuan Lee; Wooyeol Choi; Ruonan Han; H. Shichijo; K. O. Kenneth
Year: 2012
Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Qingqing Liang; Qiuxia Xu; Huilong Zhu; Huicai Zhong; Junfeng Li; Chao Zhao; Dapeng Chen; Tianchun Ye
Year: 2012
Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Qingqing Wu; Jing Chen; Zhichao Lu; Zhenming Zhou; Jiexin Luo; Zhan Chai; Tao Yu; Chao Qiu; Le Li; A. Pang; Xi Wang; J. G. Fossum
Year: 2012
Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline- $\hbox{TiO}_{2}/\hbox{SiO}_{2}$ Stacked Insulator
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jia-Rong Wu; Yung-Hsien Wu; Chia-Chun Lin; Wei-Yuan Ou; Min-Lin Wu; Lun-Lun Chen
Year: 2012
Hole Mobilities of $\hbox{Si/Si}_{0.5}\hbox{Ge}_{0.5}$ Quantum-Well Transistor on SOI and Strained SOI
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:W. Yu; B. Zhang; Q. T. Zhao; D. Buca; J.-M Hartmann; R. Luptak; G. Mussler; A. Fox; K. K. Bourdelle; X. Wang; S. Mantl
Year: 2012
High-Performance InAs Nanowire MOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. W. Dey; C. Thelander; E. Lind; K. A. Dick; B. M. Borg; M. Borgstrom; P. Nilsson; L. Wernersson
Year: 2012
Evidence for the Fourfold-Valley Confinement Electron Piezo-Effective-Mass Coefficient in Inversion Layers of $\langle \hbox{110}\rangle$ Uniaxial-Tensile-Strained (001) nMOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ming-Jer Chen; Wei-Han Lee
Year: 2012
Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{SiO}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wei Dou; Jie Jiang; Jia Sun; Bin Zhou; Qing Wan
Year: 2012
Comparison of Electrical Properties and Bias Stability of Double-Gate a-HIZO TFTs According to TFT Structure
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Young Wook Lee; Sun-Jae Kim; Soo-Yeon Lee; Woo-Geun Lee; Kap-Soo Yoon; Hyun-Jung Lee; Ji-Soo Oh; Jae-Woo Park; Min-Koo Han
Year: 2012
A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ung Gi Lee; M. Mativenga; Dong Han Kang; Jin Jang
Year: 2012
In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed $\hbox{TiO}_{x}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Seungjae Jung; Jaemin Kong; Tae-Wook Kim; Sunghoon Song; Kwanghee Lee; Takhee Lee; Hyunsang Hwang; Sanghun Jeon
Year: 2012
Extraction of the Channel Mobility in InGaZnO TFTs Using Multifrequency Capacitance–Voltage Method
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:In-Tak Cho; Ick-Joon Park; Dongsik Kong; Dae Hwan Kim; Jong-Ho Lee; Sang-Hun Song; Hyuck-In Kwon
Year: 2012
Effects of a Load Resistor on Conducting Filament Characteristics and Unipolar Resistive Switching Behaviors in a Pt/NiO/Pt Structure
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Inrok Hwang; Myung-Jae Lee; Jieun Bae; Sahwan Hong; Jin-Soo Kim; Jinsik Choi; Xiao Long Deng; Seung-Eon Ahn; Sung-Oong Kang; Bae Ho Park
Year: 2012
Low-Voltage High-Stability Indium–Zinc Oxide Thin-Film Transistor Gated by Anodized Neodymium-Doped Aluminum
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Linfeng Lan; Mingjie Zhao; Nana Xiong; Peng Xiao; Wen Shi; Miao Xu; Junbiao Peng
Year: 2012
Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Nidhi; S. Dasgupta; Jing Lu; J. S. Speck; U. K. Mishra
Year: 2012
The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. M. Roy; J. Lin; K. C. Saraswat
Year: 2012
A Fully Passive Wireless Backscattering Neurorecording Microsystem Embedded in Dispersive Human-Head Phantom Medium
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:H. N. Schwerdt; F. A. Miranda; Junseok Chae
Year: 2012
Operating TSV in Stable Accumulation Capacitance Region by Utilizing $\hbox{Al}_{2}\hbox{O}_{3}$-Induced Negative Fixed Charge
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:L. Zhang; L. Peng; H. Y. Li; G. Q. Lo; D. L. Kwong; C. S. Tan
Year: 2012
Performance of 5-nm a-IGZO TFTs With Various Channel Lengths and an Etch Stopper Manufactured by Back UV Exposure
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Mativenga; Di Geng; J. H. Chang; T. J. Tredwell; Jin Jang
Year: 2012
High-Efficiency n-Type Si Solar Cells With Novel Inkjet-Printed Boron Emitters
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Kyungsun Ryu; A. Upadhyaya; Young-Woo Ok; Moon Hee Kang; V. Upadhyaya; L. Metin; H. Xu; A. Bhanap; A. Rohatgi
Year: 2012
Coexistence of Memristive Behaviors and Negative Capacitance Effects in Single-Crystal $\hbox{TiO}_{2}$ Thin-Film-Based Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:P. Hu; J. Q. Lu; S. X. Wu; Q. B. Lv; S. W. Li
Year: 2012
Characteristics of a Smiling Polysilicon Thin-Film Transistor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jyi-Tsong Lin; Tzu-Feng Chang; Yi-Chuen Eng; Po-Hsieh Lin; Cheng-Hsin Chen
Year: 2012
Monolithic HBV-Based 282-GHz Tripler With 31-mW Output Power
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. Vukusic; T. Bryllert; Øistein Olsen; J. Hanning; J. Stake
Year: 2012
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chia-Hao Kuo; Horng-Chih Lin; I-Che Lee; Huang-Chung Cheng; Tiao-Yuan Huang
Year: 2012
Passivation of Amorphous Oxide Semiconductors Utilizing a Zinc–Tin–Silicon–Oxide Barrier Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:E. S. Sundholm; R. E. Presley; K. Hoshino; C. C. Knutson; R. L. Hoffman; D. A. Mourey; D. A. Keszler; J. F. Wager
Year: 2012
Novel 2-Bit/Cell Wrapped-Select-Gate SONOS TFT Memory Using Source-Side Injection for NOR-Type Flash Array
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Kuan-Ti Wang; Fang-Chang Hsueh; Yu-Lun Lu; Tsung-Yu Chiang; Yi-Hong Wu; Chia-Chun Liao; Li-Chen Yen; Tien-Sheng Chao
Year: 2012
Evidence for Silicon Bandgap Narrowing in Uniaxially Strained MOSFETs Subjected to Tensile and Compressive Stress
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ting-Kuo Kang
Year: 2012
Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:G. Leung; Chi On Chui
Year: 2012
Selenium Segregation for Effective Schottky Barrier Height Reduction in NiGe/n–Ge Contacts
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yi Tong; Bin Liu; Phyllis Shi Ya Lim; Yee-Chia Yeo
Year: 2012
Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Meng Miao; Shurong Dong; Jian Wu; Jie Zeng; J. J. Liou; Fei Ma; Hongwei Li; Yan Han
Year: 2012
11.72-$\hbox{cm}^{2}$ Active-Area Wafer-Interconnected p-i-n Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 $\hbox{MA}^{2}\cdot\hbox{s}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Snook; H. Hearne; T. McNutt; V. Veliadis; N. El-Hinnawy; B. Nechay; S. Woodruff; R. E. Stahlbush; R. S. Howell; D. Giorgi; J. White; S. Davis
Year: 2012
Impact of Individual Charged Gate-Oxide Defects on the Entire $I_{D}$$V_{G}$ Characteristic of Nanoscaled FETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. Franco; B. Kaczer; M. Toledano-Luque; M. F. Bukhori; P. J. Roussel; T. Grasser; A. Asenov; G. Groeseneken
Year: 2012
Unipolar Resistive Switching Characteristics of a $ \hbox{ZrO}_{2}$ Memory Device With Oxygen Ion Conductor Buffer Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Dai-Ying Lee; Tseung-Yuen Tseng
Year: 2012
A New Recess Method for SA-STI nand Flash Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zih-Song Wang; Ya-Jui Lee; Rex Yang; Ying-Chia Li; Huei-Haurng Chen; Chrong Jung Lin
Year: 2012
Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. B. Wei; K. Wu; Y. Chen; J. Yu; Q. Yan; Y. Y. Zhang; R. Duan; J. Wang; Y. Zeng; J. M. Li
Year: 2012
Submicrometer Process and RF Operation of InAs Quantum Hot-Electron Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:H. van Nguyen; J. C. Moreno; A. N. Baranov; R. Teissier; M. Zaknoune
Year: 2012
Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Furuta; T. Kawaharamura; Depang Wang; T. Toda; T. Hirao
Year: 2012
Nanocrystalline Si-Based Resistive Humidity Sensors Prepared via HWCVD at Various Filament Temperatures
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. J. Hsueh; Y. H. Chen; W. Y. Weng; T. Y. Tsai; H. T. Hsueh; C. L. Hus; B. T. Dai; J. M. Shieh
Year: 2012
Extraction Method of Trap Densities in TFTs Combining $C$$V$ and F-E Methods
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Kimura
Year: 2012
Floating-Body Kink-Effect-Related Parasitic Bipolar Transistor Behavior in Poly-Si TFT
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. C. Liu; J. B. Kuo; Shengdong Zhang
Year: 2012
The Effects of Gadolinium Incorporation Into Indium–Zinc–Oxide Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae Chul Park; Sang Wook Kim; Chang Jung Kim; Ho-Nyeon Lee
Year: 2012
Surface-Roughness-Induced Variability in Nanowire InAs Tunnel FETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. Conzatti; M. G. Pala; D. Esseni
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 03 May 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special issue on advanced modeling of power devices and their applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Temperature Dependence of Electron Mobility on Strained nMOSFETs Fabricated by Strain-Gate Engineering
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tien-Shun Chang; Tsung Yi Lu; Tien-Sheng Chao
Year: 2012
Nucleation and Resistivity of Ultrathin TiN Films Grown by High-Power Impulse Magnetron Sputtering
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. Magnus; A. S. Ingason; S. Olafsson; J. T. Gudmundsson
Year: 2012
Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. Palumbo; E. Miranda; G. Ghibaudo; V. Jousseaume
Year: 2012
Low-Power-Driven and Low-Optical-Loss 40-Gb/s Electroabsorption Modulator Using Self-Aligned Two-Step Undercut-Etched Waveguide
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tsu-Hsiu Wu; Jui-Pin Wu; Yi-Jen Chiu
Year: 2012
Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Han-Chieh Ho; Zon-Yan Gao; Heng-Kuang Lin; Pei-Chin Chiu; Yue-Ming Hsin; Jen-Inn Chyi
Year: 2012
A Novel Depletion-Mode a-IGZO TFT Shift Register With a Node-Shared Structure
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Binn Kim; Hyung Nyuck Cho; Woo Seok Choi; Seung-Hee Kuk; Juhn-Suk Yoo; Soo Young Yoon; Myungchul Jun; Yong-Kee Hwang; Min-Koo Han
Year: 2012
Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sungsik Lee; A. Ahnood; S. Sambandan; A. Madan; A. Nathan
Year: 2012
Effect of Annealing Temperature on $\hbox{TiO}_{2}$ -Based Thin-Film-Transistor Performance
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ni Zhong; Jun Jun Cao; H. Shima; H. Akinaga
Year: 2012
UV-Assisted Alcohol Sensing With Zinc Oxide-Functionalized Gallium Nitride Nanowires
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ritu Bajpai; A. Motayed; A. V. Davydov; K. A. Bertness; M. E. Zaghloul
Year: 2012
Effect of Temperature and Humidity on $\hbox{NO}_{2}$ and $\hbox{NH}_{3}$ Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chang-Hee Kim; Sung-Won Yoo; Dong-Woo Nam; Sunae Seo; Jong-Ho Lee
Year: 2012
Process-Dependent N/PBTI Characteristics of TiN Gate FinFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jin Ju Kim; Moonju Cho; L. Pantisano; Ukjin Jung; Young Gon Lee; T. Chiarella; M. Togo; N. Horiguchi; G. Groeseneken; Byoung Hun Lee
Year: 2012
$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ RTD–MOSFET Millimeter-Wave Wavelet Generator
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Egard; M. Arlelid; L. Ohlsson; B. M. Borg; E. Lind; L. Wernersson
Year: 2012
High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Di Geng; Dong Han Kang; Man Ju Seok; M. Mativenga; Jin Jang
Year: 2012
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Nidhi; S. Dasgupta; J. Lu; J. S. Speck; U. K. Mishra
Year: 2012
Effects of Metal Capping on Thermal Annealing of Copper Interconnects
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:C.-C Yang; B. Li; D. Edelstein; R. Rosenberg
Year: 2012
A New 4T0.5C AMOLED Pixel Circuit With Reverse Bias to Alleviate OLED Degradation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Kuei-Yu Lee; Yen-Ping Hsu; Paul C.-P Chao
Year: 2012
Cosputtered Cu/Ti Bonded Interconnects With a Self-Formed Adhesion Layer for Three-Dimensional Integration Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sheng-Yao Hsu; Hsiao-Yu Chen; Kuan-Neng Chen
Year: 2012
Impact of $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation Thickness in Highly Scaled GaN HEMTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Dong Seup Lee; O. Laboutin; Yu Cao; W. Johnson; E. Beam; A. Ketterson; M. Schuette; P. Saunier; T. Palacios
Year: 2012
3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyung-Seok Lee; D. Piedra; Min Sun; Xiang Gao; Shiping Guo; T. Palacios
Year: 2012
Improved Resistance Switching Characteristics in Ti-Doped $\hbox{Yb}_{2}\hbox{O}_{3}$ for Resistive Nonvolatile Memory Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Mondal; Jim-Long Her; Fa-Hsyang Chen; Shao-Ju Shih; Tung-Ming Pan
Year: 2012
Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jiangjiang J. Gu; Heng Wu; Yiqun Liu; Adam T. Neal; Roy G. Gordon; Peide D. Ye
Year: 2012
Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Pil Sung Park; D. N. Nath; S. Rajan
Year: 2012
Correlation Between Random Telegraph Noise and $ \hbox{1}/f$ Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Bo Chin Wang; San Lein Wu; Chien Wei Huang; Yu Ying Lu; Shoou Jinn Chang; Yu Min Lin; Kun Hsien Lee; O. Cheng
Year: 2012
Investigating the Drain-Bias-Induced Degradation Behavior Under Light Illumination for InGaZnO Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tien-Yu Hsieh; Ting-Chang Chang; Te-Chih Chen; Ming-Yen Tsai; Yu-Te Chen; Fu-Yen Jian; Yi-Chen Chung; Hung-Che Ting; Chia-Yu Chen
Year: 2012
Chemical Oxide Interfacial Layer for the High-$k$ -Last/Gate-Last Integration Scheme
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ying-Tsung Chen; Ssu-I Fu; Wen-Tai Chiang; Chien-Ting Lin; Shih-Hung Tsai; Shao-Wei Wang; Shoou-Jinn Chang
Year: 2012
Low-Frequency Noise in Enhancement-Mode GaN MOS-HEMTs by Using Stacked $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{Ga}_{2}\hbox{O}_{3}/\hbox{Gd}_{2}\hbox{O}_{3}$ Gate Dielectric
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hsien-Chin Chiu; Jia-Hsuan Wu; Chih-Wei Yang; Fan-Hsiu Huang; Hsuan-Ling Kao
Year: 2012
Ultrathin Strained-Ge Channel P-MOSFETs With High-$K$ /Metal Gate and Sub-1-nm Equivalent Oxide Thickness
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:O. Hashemi; W. Chern; H. Lee; J. T. Teherani; Y. Zhu; J. Gonsalvez; G. G. Shahidi; J. L. Hoyt
Year: 2012
Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Euiyoun Hong; Daeyoun Yun; Hagyoul Bae; Hyunjun Choi; Won Hee Lee; Mihee Uhm; Hyojoon Seo; Jieun Lee; Jaeman Jang; Dae Hwan Kim; Dong Myong Kim
Year: 2012
Capacitance–Voltage Measurement With Photon Probe to Quantify the Trap Density of States in Amorphous Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Youn-Gyoung Chang; Hee Sung Lee; Kyunghee Choi; Seongil Im
Year: 2012
Microelectromechanical Systems (MEMS) Based-Ultrasonic Electrostatic Actuators on a Flexible Substrate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sangpyeong Kim; Xu Zhang; R. Daugherty; Ed Lee; G. Kunnen; D. R. Allee; E. Forsythe; Junseok Chae
Year: 2012
Development of a Heat Sink With Periodic Asymmetric Structures Using Grayscale Lithography and Deep Reactive Ion Etching
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Thiagarajan; F. Kapsenberg; V. Narayanan; S. H. Bhavnani; C. D. Ellis
Year: 2012
AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Shu Yang; Sen Huang; Hongwei Chen; Chunhua Zhou; Qi Zhou; M. Schnee; Qing-Tai Zhao; J. Schubert; K. J. Chen
Year: 2012
$\hbox{HfO}_{2}$-Based RRAM Devices With Varying Contact Sizes and Their Electrical Behavior
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Venkatakrishnan Sriraman; Xiang Li; Navab Singh; Sungjoo Lee
Year: 2012
Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Wang; Hao Wu; Z. Wang; C. Chen; Chang Liu
Year: 2012
Modeling the Electrothermal Stability of Power MOSFETs During Switching Transients
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:O. Alatise; N-A Parker-Allotey; P. Mawby
Year: 2012
Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Jain; T. Bansal; C. Durcan; Bin Yu
Year: 2012
Relationship Between Conduction Mechanism and Low-Frequency Noise in Polycrystalline- $\hbox{TiO}_{x}$-Based Resistive-Switching Memory Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jung-Kyu Lee; In-Tak Cho; Hyuck-In Kwon; Cheol Seong Hwang; Chan Hyeong Park; Jong-Ho Lee
Year: 2012
Degradation and Full Recovery in High-Voltage Implanted-Gate SiC JFETs Subjected to Bipolar Current Stress
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:V. Veliadis; H. Hearne; E. J. Stewart; M. Snook; W. Chang; J. D. Caldwell; H. C. Ha; N. El-Hinnawy; P. Borodulin; R. S. Howell; D. Urciuoli; A. Lelis; C. Scozzie
Year: 2012
High-Responsivity Solar-Blind Photodetector Based on $ \hbox{Mg}_{0.46}\hbox{Zn}_{0.54}\hbox{O}$ Thin Film
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Qinghong Zheng; Feng Huang; Jin Huang; Qichan Hu; Dagui Chen; Kai Ding
Year: 2012
Miniature CMOS Stacked Spiral-Coupled Directional Coupler With $-$67-dB Isolation and $-$ 0.8-dB Insertion Loss
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Le Ye; Yongan Zheng; Jiayi Wang; Huailin Liao; Ru Huang
Year: 2012
PDMS-Coated Piezoresistive NEMS Diaphragm for Chloroform Vapor Detection
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Huihui Guo; Liang Lou; Xiangdong Chen; Chengkuo Lee
Year: 2012
Conduction Mechanism of Se Schottky Contact to n-Type Ge
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:V. Janardhanam; Yang-Kyu Park; Hyung-Joong Yun; Kwang-Soon Ahn; Chel-Jong Choi
Year: 2012
Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyo Kyeom Kim; Sang Young Lee; Il-Hyuk Yu; Tae Joo Park; R. Choi; Cheol Seong Hwang
Year: 2012
Soft Actuator Using Ionic Polymer–Metal Composite Composed of Gold Electrodes Deposited Using Vacuum Evaporation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hiroshi Okazaki; S. Sawada; M. Kimura; H. Tanaka; T. Matsumoto; T. Ohtake; S. Inoue
Year: 2012
A Simple Pixel Structure Using Polycrystalline-Silicon Thin-Film Transistors for High-Resolution Active-Matrix Organic Light-Emitting Diode Displays
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hai-Jung In; Oh-Kyong Kwon
Year: 2012
Polarity Dependence of the Conduction Mechanism in Interlevel Low-$k$ Dielectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Mingte Lin; J. Liang; C. J. Wang; A. Juan; K. C. Su
Year: 2012
A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Han-Yin Liu; Bo-Yi Chou; Wei-Chou Hsu; Ching-Sung Lee; Chiu-Sheng Ho
Year: 2012
Ultralow Specific On-Resistance Superjunction Vertical DMOS With High-$K$ Dielectric Pillar
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xiaorong Luo; Y. H. Jiang; K. Zhou; P. Wang; X. W. Wang; Q. Wang; G. L. Yao; B. Zhang; Z. J. Li
Year: 2012
InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. Maier; M. Alomari; N. Grandjean; J. Carlin; M. Diforte-Poisson; C. Dua; S. Delage; E. Kohn
Year: 2012
The Dependence of Retention Time on Gate Length in UTBOX FBRAM With Different Source/Drain Junction Engineering
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Nicoletti; M. Aoulaiche; L. M. Almeida; S. D. Santos; J. A. Martino; A. Veloso; M. Jurczak; E. Simoen; C. Claeys
Year: 2012
UV–Visible Light-Trapping Structure of Loosely Packed Submicrometer Silica Sphere for Amorphous Silicon Solar Cells
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wen-Hsien Huang; Jia-Min Shieh; Fu-Ming Pan; Chang-Hong Shen; Yu-Chung Lien; Min-An Tsai; Hao-Chung Kuo; Bau-Tong Dai; Fu-Liang Yang
Year: 2012
Efficient Semitransparent Inverted Polymer Solar Cells With the Anode of Tunable Incident Light Transmittance
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yang Xu; Liang Shen; Wenjuan Yu; Haifeng Zhang; Weiyou Chen; Shengping Ruan
Year: 2012
InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yuanzheng Yue; Zongyang Hu; Jia Guo; B. Sensale-Rodriguez; Guowang Li; Ronghua Wang; F. Faria; Tian Fang; Bo Song; Xiang Gao; Shiping Guo; T. Kosel; G. Snider; P. Fay; D. Jena; Huili Xing
Year: 2012
Variable Inductors in CMOS for Millimeter-Wave Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yang-Hun Yun; Te-Yu J. Kao; K. O. Kenneth
Year: 2012
AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yi-Wei Lian; Yu-Syuan Lin; Hou-Cheng Lu; Yen-Chieh Huang; S. S. H. Hsu
Year: 2012
Device Circuit Co-Design Issues in Vertical Nanowire CMOS Platform
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Maheshwaram; S. K. Manhas; G. Kaushal; B. Anand; N. Singh
Year: 2012
Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yun-Yan Zhang; Xue-Liang Zhu; Yi-An Yin; Jun Ma
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 24 May 2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE Bipolar/Bicmos Circuits and Technology Meeting (BCTM)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special issue on advanced modeling of power devices and their applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Enhanced Electrooptical Characteristics of Twisted Nematic Liquid Crystal Display With $\hbox{ZrO}_{2}$ Thin Films
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lee-Gon Kim; Hong-Gyu Park; Young-Hwan Kim; Dae-Shik Seo
Year: 2012
Multibranch Mobility Analysis for the Characterization of FDSOI Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:C. Navarro; N. Rodriguez; A. Ohata; F. Gamiz; F. Andrieu; C. Fenouillet-Beranger; O. Faynot; S. Cristoloveanu
Year: 2012
Analysis of Complementary RRAM Switching
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. J. Wouters; Leqi Zhang; A. Fantini; R. Degraeve; L. Goux; Y. Y. Chen; B. Govoreanu; G. S. Kar; G. V. Groeseneken; M. Jurczak
Year: 2012
First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. Medjdoub; M. Zegaoui; B. Grimbert; D. Ducatteau; N. Rolland; P. A. Rolland
Year: 2012
Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Z. Butt; J. B. Johnson
Year: 2012
An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Myounggon Kang; Il Han Park; Ik Joon Chang; Kyunghwan Lee; Seongjun Seo; Byung-Gook Park; Hyungcheol Shin
Year: 2012
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Seol Choi; S. Balatti; F. Nardi; D. Ielmini
Year: 2012
A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chien-Yuan Huang; Wen Chao Shen; Yuan-Heng Tseng; Ya-Chin King; Chrong-Jung Lin
Year: 2012
Enhanced Power Efficiency of Organic Light-Emitting Diodes using Pentacene on $\hbox{CF}_{4}$-Plasma-Treated Indium Tin Oxide Anodes
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Young Wook Park; Hyun Ju Choi; Jin Hwan Choi; Tae Hyun Park; Jin-Wook Jeong; Eun Ho Song; Byeong Kwon Ju
Year: 2012
In-Plane Gate Transistors With a 40-$\mu\hbox{m}$ -Wide Channel Width
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tung-Hsun Chung; Wei-Hsun Lin; Yi-Kai Chao; Shu-Wei Chang; Shih-Yen Lin
Year: 2012
Non-Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Tapajna; N. Killat; J. Moereke; T. Paskova; K. R. Evans; J. Leach; X. Li; Ü Ozgur; H. Morkoc; K. D. Chabak; A. Crespo; J. K. Gillespie; R. Fitch; M. Kossler; D. E. Walker; M. Trejo; G. D. Via; J. D. Blevins; M. Kuball
Year: 2012
Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tongde Huang; Xueliang Zhu; K. M. Lau
Year: 2012
Enhancing Hysteresis in Graphene Devices Using Dielectric Screening
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:K. Brenner; T. J. Beck; J. D. Meindl
Year: 2012
Reduced Trap-State Density of Ni-Silicide Seed-Induced Crystallized Poly-Si TFTs by Gettering
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chang Woo Byun; Se Wan Son; Yong Woo Lee; Seung Ki Joo
Year: 2012
Polarization Effect on the Photovoltaic Characteristics of $\hbox{Al}_{0.14}\hbox{Ga}_{0.86}\hbox{N}/\hbox{In}_{0.21}\hbox{Ga}_{0.79}\hbox{N}$ Superlattice Solar Cells
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yen-Kuang Kuo; Han-Wei Lin; Jih-Yuan Chang; Yu-Han Chen; Yi-An Chang
Year: 2012
Thermally Stable Operation of H-Terminated Diamond FETs by $\hbox{NO}_{2}$ Adsorption and $\hbox{Al}_{2}\hbox{O}_{3}$ Passivation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:K. Hirama; H. Sato; Y. Harada; H. Yamamoto; M. Kasu
Year: 2012
Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:V. Kaushal; Ignacio Iniguez-de-la-Torre; T. Gonzalez; J. Mateos; Bongmook Lee; V. Misra; M. Margala
Year: 2012
Hydrogen Redistribution and Performance Improvement of Silicon Avalanche Photodiode by Low-Temperature Annealing
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Kawauchi; H. Yonemura; S. Kishimoto; K. Fukutani
Year: 2012
840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae-Hoon Lee; Jong-Kyu Yoo; Hee-Sung Kang; Jung-Hee Lee
Year: 2012
Hole Transport in Strained $\hbox{Si}_{0.5} \hbox{Ge}_{0.5}$ QW-MOSFETs With $\langle\hbox{110}\rangle$ and $\langle\hbox{100}\rangle$ Channel Orientations
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. A. Minamisawa; M. Schmidt; L. Knoll; D. Buca; Q. T. Zhao; J. M. Hartmann; K. K. Bourdelle; S. Mantl
Year: 2012
A Low-Power Scan Driver Circuit for Oxide TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae-Eun Pi; MinKi Ryu; Chi-Sun Hwang; ShinHyuk Yang; Sang-Hee Ko Park; Sung-Min Yoon; HongKyun Leem; YounKyung Kim; JoonDong Kim; Hwan Sool Oh; KeeChan Park
Year: 2012
Redistribution of Electrical Interconnections for Three-Dimensional Wafer-Level Packaging With Silicon Bumps
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Guoqiang Wu; Dehui Xu; Bin Xiong; Yuelin Wang
Year: 2012
New Read Schemes Using Boosted Channel Potential of Adjacent Bit-Line Strings in nand Flash Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sung-Min Joe; Min-Kyu Jeong; Myounggon Kang; Kyoung-Rok Han; Sung-Kye Park; Jong-Ho Lee
Year: 2012
Design Optimization of Pulsed-Mode Electromechanical Nonvolatile Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:V. Pott; R. Vaddi; Geng Li Chua; J. T. M. Lin; T. T. Kim
Year: 2012
Reliability Improvement of 28-nm High-$k$ /Metal Gate-Last MOSFET Using Appropriate Oxygen Annealing
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yi-Lin Yang; Wenqi Zhang; Chi-Yun Cheng; Yi-Ping Huang; Pin-Tseng Chen; Chia-Wei Hsu; Li-Kong Chin; Chien-Ting Lin; Che-Hua Hsu; Chien-Ming Lai; Wen-Kuan Yeh
Year: 2012
Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zhi Ye; M. Wong
Year: 2012
A Lateral Power MOSFET With the Double Extended Trench Gate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lei Yue; Bo Zhang; Zaoji Li
Year: 2012
InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. Fluckiger; R. Lovblom; O. Ostinelli; H. Benedickter; C. R. Bolognesi
Year: 2012
CMOS-Integrated Poly-SiGe Piezoresistive Pressure Sensor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:P. Gonzalez; M. Rakowski; D. San Segundo; S. Severi; K. de Meyer; A. Witvrouw
Year: 2012
Optimization of 40-nm Node Epitaxial Diode Array for Phase-Change Memory Application
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yan Liu; Zhitang Song; Bo Liu; Guanping Wu; Houpeng Chen; Chao Zhang; Lianhong Wang; Songlin Feng
Year: 2012
Effect of Density of States on Mobility in Small-Molecule n-Type Organic Thin-Film Transistors Based on a Perylene Diimide
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Castro-Carranza; J. C. Nolasco; M. Estrada; R. Gwoziecki; M. Benwadih; Y. Xu; A. Cerdeira; L. F. Marsal; G. Ghibaudo; B. Iniguez; J. Pallares
Year: 2012
Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chunhua Zhou; Qimeng Jiang; Sen Huang; K. J. Chen
Year: 2012
Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hagyoul Bae; Sungwoo Jun; Choon Hyeong Jo; Hyunjun Choi; Jaewook Lee; Yun Hyeok Kim; Seonwook Hwang; Hyun Kwang Jeong; Inseok Hur; Woojoon Kim; Daeyoun Yun; Euiyeon Hong; Hyojoon Seo; Dae Hwan Kim; Dong Myong Kim
Year: 2012
MOSFET Drain Current Noise Modeling With Effective Gate Overdrive and Junction Noise
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:L. H. K. Chan; K. S. Yeo; K. W. J. Chew; S. N. Ong; X. S. Loo; C. C. Boon; M. A. Do
Year: 2012
Analysis of MWCNT and Bundled SWCNT Interconnects: Impact on Crosstalk and Area
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. K. Majumder; N. D. Pandya; B. K. Kaushik; S. K. Manhas
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 7/2/2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special Issue on GaN Electronic Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Understanding Overreset Transition in Phase-Change Memory Characteristics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Calderoni; M. Ferro; E. Varesi; P. Fantini; M. Rizzi; D. Ielmini
Year: 2012
Impact of Cu Contamination on Memory Retention Characteristics in Thinned DRAM Chip for 3-D Integration
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Kangwook Lee; T. Tani; H. Naganuma; Y. Ohara; T. Fukushima; T. Tanaka; M. Koyanagi
Year: 2012
Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:I. Cortes; J. Roig; P. Moens; S. Mouhoubi; P. Gassot; J. Rebollo; F. Bauwens; D. Flores
Year: 2012
Cross-Bar Design of Nano-Vacuum Triode for High-Frequency Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:G. Ulisse; F. Brunetti; F. Ricci; A. M. Fiorello; A. D. Carlo
Year: 2012
$\hbox{MoS}_{2}$ Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Han Liu; Jiangjiang Gu; P. D. Ye
Year: 2012
Embedded Flash on a Low-Power 65-nm Logic Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Fong; J. Ariyoshi; T. Ema
Year: 2012
High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT–MEMS Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Abe; Y. Abe; N. Kogushi; Kian Siong Ang; R. Hofstetter; Hong Wang; Geok Ing Ng
Year: 2012
Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Barraud; M. Berthome; R. Coquand; M. Casse; T. Ernst; M. Samson; P. Perreau; K. K. Bourdelle; O. Faynot; T. Poiroux
Year: 2012
Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:C. J. Kirkpatrick; Bongmook Lee; R. Suri; Xiangyu Yang; V. Misra
Year: 2012
Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Afzalian; D. Flandre
Year: 2012
Low-Frequency Noise in SONOS-TFT With a Trigate Nanowire Structure Under Program/Erase Operation
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hsin-Hui Hu; Yong-Ren Jheng; Yung-Chun Wu; Min-Feng Hung; Guo-Wei Huang
Year: 2012
High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Qiang Li; Xiuju Zhou; Chak Wah Tang; Kei May Lau
Year: 2012
High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. Deguchi; T. Kikuchi; M. Arai; K. Yamasaki; T. Egawa
Year: 2012
$\hbox{Ge}_{2}\hbox{Sb}_{2}\hbox{Te}_{5}$ as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sang Hyeon Lee; Moonkyung Kim; Byung-ki Cheong; Jo-Won Lee; S. Tiwari
Year: 2012
Ten-Nanometer Ferroelectric $\hbox{Si:HfO}_{2}$ Films for Next-Generation FRAM Capacitors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Mueller; S. R. Summerfelt; J. Muller; U. Schroeder; T. Mikolajick
Year: 2012
Device Design Guidelines for Nanoscale FinFETs in RF/Analog Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chang-Woo Sohn; Chang Yong Kang; Rock-Hyun Baek; Do-Young Choi; Hyun Chul Sagong; Eui-Young Jeong; Chang-Ki Baek; Jeong-Soo Lee; J. C. Lee; Yoon-Ha Jeong
Year: 2012
An 8-Mb Phase-Change Random Access Memory Chip Based on a Resistor-on-Via-Stacked-Plug Storage Cell
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Daolin Cai; Houpeng Chen; Qian Wang; Yifeng Chen; Zhitang Song; Guanping Wu; Songlin Feng
Year: 2012
Influence of InGaP and AlGaAs Schottky Layers on ESD Robustness in GaAs pHEMTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Shih-Hung Chen; Yueh-Chin Lin; D. Linten; M. Scholz; G. Hellings; E. Y. Chang; G. Groeseneken
Year: 2012
Capacitance Analysis of Highly Leaky $\hbox{Al}_{2} \hbox{O}_{3}$ MIM Capacitors Using Time Domain Reflectometry
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yonghun Kim; Young Gon Lee; Minwoo Kim; Chang Goo Kang; Ukjin Jung; Jin Ju Kim; Seung Chul Song; J. Blatchford; B. Kirkpatrick; H. Niimi; Kwan Yong Lim; Byoung Hun Lee
Year: 2012
Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. Medjdoub; Y. Tagro; M. Zegaoui; B. Grimbert; F. Danneville; D. Ducatteau; N. Rolland; P. A. Rolland
Year: 2012
A Drain-Extended MOS Device With Spreading Filament Under ESD Stress
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Shrivastava; H. Gossner; C. Russ
Year: 2012
Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Fei Xue; Aiting Jiang; Han Zhao; Yen-Ting Chen; Yanzhen Wang; Fei Zhou; J. Lee
Year: 2012
Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. A. Karim; Y. S. Chauhan; S. Venugopalan; A. B. Sachid; D. D. Lu; B. Y. Nguyen; O. Faynot; A. M. Niknejad; C. Hu
Year: 2012
High Sensitivity of Dry-Type Nanowire Sensors With High- $k$ Dielectrics for pH Detection via Capillary Atomic Force Microscope Tip Coating Technique
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Huang-Chung Cheng; Chun-Yu Wu; Po-Yen Hsu; Chao-Lung Wang; Ta-Chuan Liao; You-Lin Wu
Year: 2012
200-V Lateral Superjunction LIGBT on Partial SOI
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:E. C. T. Kho; A. D. Hoelke; S. J. Pilkington; D. K. Pal; Wan Azlan Wan Zainal Abidin; Liang Yew Ng; M. Antoniou; F. Udrea
Year: 2012
Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Seung-Hee Kuk; Soo-Yeon Lee; Sun-Jae Kim; Binn Kim; Soo-Jeong Park; Jang-Yeon Kwon; Min-Koo Han
Year: 2012
High-Power Magnetically Actuated Microswitches Fabricated in Laminates
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Bachman; Yang Zhang; Minfeng Wang; G. Li
Year: 2012
New Subject Heading on “Memory Devices and Technology”
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:John D. Cressler; Amitava Chatterjee
Year: 2012
Design and Scalability of a Memory Array Utilizing Anchor-Free Nanoelectromechanical Nonvolatile Memory Device
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. Vaddi; V. Pott; Geng Li Chua; J. T. M. Lin; T. T. Kim
Year: 2012
Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Rongsheng Chen; Wei Zhou; Meng Zhang; Hoi Sing Kwok
Year: 2012
Policy on Prepublication for Submissions to IEEE Electron Device Letters
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Enhanced Programming and Erasing Speeds in P-Channel Charge-Trapping Flash Memory Device With SiGe Buried Channel
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Li-Jung Liu; Kuei-Shu Chang-Liao; Yi-Chuen Jian; Jen-Wei Cheng; Tien-Ko Wang; Ming-Jinn Tsai
Year: 2012
Correction to "Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer" [Jul 12 994-996]
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yun-Yan Zhang; Yi-An Yin
Year: 2012
Correlated Flicker Noise and Hole Mobility Characteristics of $(\hbox{110})/\langle\hbox{110}\rangle$ Uniaxially Strained SiGe FINFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:B. Rajamohanan; Injo Ok; S. Mujumdar; C. Hobbs; P. Majhi; R. Jammy; S. Datta
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 8/2/2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Themed issue on micro/nano-electro-mechanical-systems (MEMS/NEMS)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE International Electron Devices Meeting
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special Issue on GaN Electronic Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Preparation of abstracts 2012 International Electron Devices Meeting - Late news papers:
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 SOI Conference advance program
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Phonon-Limited Transport in Graphene Pseudospintronic Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Z. J. Estrada; B. Dellabetta; U. Ravaioli; M. J. Gilbert
Year: 2012
Normally Off GaN Power MOSFET Grown on Sapphire Substrate With Highly Resistive Undoped Buffer Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jae-Hoon Lee; Jae-Hyun Jeong; Jung-Hee Lee
Year: 2012
150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. Marti; S. Tirelli; A. R. Alt; J. Roberts; C. R. Bolognesi
Year: 2012
Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Feng Gao; Di Chen; Bin Lu; H. L. Tuller; C. V. Thompson; S. Keller; U. K. Mishra; T. Palacios
Year: 2012
On the Voltage Gain of Complementary Graphene Voltage Amplifiers With Optimized Doping
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hong-Yan Chen; J. Appenzeller
Year: 2012
Effects of Device Geometry on Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Min Jin Lee; Woo Young Choi
Year: 2012
Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jingjian Ren; Bei Li; Jian-Guo Zheng; M. Olmedo; Huimei Zhou; Yi Shi; Jianlin Liu
Year: 2012
Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. S. Moon; H-C Seo; M. Antcliffe; S. Lin; C. McGuire; D. Le; L. O. Nyakiti; D. K. Gaskill; P. M. Campbell; K-M Lee; P. Asbeck
Year: 2012
InAs–Si Nanowire Heterojunction Tunnel FETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:K. E. Moselund; H. Schmid; C. Bessire; M. T. Bjork; H. Ghoneim; H. Riel
Year: 2012
300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ming Qiao; Xin Zhou; Yitao He; Hengjuan Wen; Yuanyuan Zhao; Bo Zhang; Zhaoji Li
Year: 2012
Enhanced Operation in Charge-Trapping Nonvolatile Memory Device With $\hbox{Si}_{3}\hbox{N}_{4}/\hbox{Al}_{2}\hbox{O}_{3}/\hbox{HfO}_{2}$ Charge-Trapping Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zong-Hao Ye; Kuei-Shu Chang-Liao; Cheng-Yu Tsai; Tzu-Ting Tsai; Tien-Ko Wang
Year: 2012
A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Shrivastava; H. Gossner; V. R. Rao
Year: 2012
550 $^{\circ}\hbox{C}$ Integrated Logic Circuits using 6H-SiC JFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chia-Wei Soong; A. C. Patil; S. L. Garverick; Xiaoan Fu; M. Mehregany
Year: 2012
High-Performance Micromachined Inductors Tunable by Lead Zirconate Titanate Actuators
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. S. Bedair; J. S. Pulskamp; C. D. Meyer; M. Mirabelli; R. G. Polcawich; B. Morgan
Year: 2012
Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jheng-Jie Huang; Ting-Chang Chang; Jyun-Bao Yang; Shih-Ching Chen; Po-Chun Yang; Yu-Ting Chen; Hsueh-Chih Tseng; S. M. Sze; Ann-Kuo Chu; Ming-Jinn Tsai
Year: 2012
Memristor Resistance Modulation for Analog Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tsung-Wen Lee; J. H. Nickel
Year: 2012
A Low-Output-Noise Multistage Shift Register Using Tin Dioxide Nanowire Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Seong-Jin Ahn; Jin-Seong Kang; Hai-Jung In; Sanghyun Ju; Oh-Kyong Kwon
Year: 2012
High-Performance Germanium $\Omega$ -Gate MuGFET With Schottky-Barrier Nickel Germanide Source/Drain and Low-Temperature Disilane-Passivated Gate Stack
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Bin Liu; Xiao Gong; Genquan Han; P. S. Y. Lim; Yi Tong; Qian Zhou; Yue Yang; N. Daval; C. Veytizou; D. Delprat; Bich-Yen Nguyen; Yee-Chia Yeo
Year: 2012
Photomask Effect in Organic Solar Cells With ZnO Cathode Buffer Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyeong Pil Kim; Mi Sun Ryu; Jun Ho Youn; A. R. bin Mohd Yusoff; Jin Jang
Year: 2012
A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J. L. Padilla; F. Gamiz; A. Godoy
Year: 2012
Electro-Optical Characteristics of Liquid Crystal Device With Nanoscale Molybdenum Trioxide $(\hbox{MoO}_{3})$ Thin Films
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hong-Gyu Park; Dai-Hyun Kim; Gun-Young Lee; Lee-Gon Kim; Young-Hwan Kim; Hongil Yoon; Dae-Shik Seo
Year: 2012
Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yandong He; Ganggang Zhang; Lin Han; Xing Zhang
Year: 2012
Modeling Operational Modes of a Bipolar Vacuum Microelectronic Device
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. C. Madison; C. B. Parker; J. T. Glass; B. R. Stoner
Year: 2012
Nanoscale RingFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Williams; H. Silva; A. Gokirmak
Year: 2012
Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zheng Xu; Jian-Qiang Lu
Year: 2012
1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. L. Selvaraj; A. Watanabe; A. Wakejima; T. Egawa
Year: 2012
A Novel Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sheng-Hsien Liu; Wen-Luh Yang; Chi-Chang Wu; Tien-Sheng Chao
Year: 2012
High-Holding-Voltage Silicon-Controlled Rectifier for ESD Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Shurong Dong; Jian Wu; Meng Miao; Jie Zeng; Yan Han; J. J. Liou
Year: 2012
Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:V. S. S. Srinivasan; S. Chopra; P. Karkare; P. Bafna; S. Lashkare; P. Kumbhare; Y. Kim; S. Srinivasan; S. Kuppurao; S. Lodha; U. Ganguly
Year: 2012
A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Pan; Chi On Chui
Year: 2012
Characterization of Channel-Diameter-Dependent Low-Frequency Noise in Silicon Nanowire Field-Effect Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sang-Hyun Lee; Chang-Ki Baek; Sooyoung Park; Dong-Won Kim; Dong Kyun Sohn; Jeong-Soo Lee; D. M. Kim; Yoon-Ha Jeong
Year: 2012
Nonlinearity Control of Nanoelectromechanical Resonators
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyong Seo Yoon; Whan Kyun Kim; Joon Hyong Cho; Ji Yoong Kang; Yongsoo Choi; Chulki Kim; Jae Hun Kim; Seok Lee; Jung Han Choi; Sang Uk Son; Duck-Hwan Kim; Insang Song; Seong Chan Jun
Year: 2012
ZnO-Nanorod-Based Ammonia Gas Sensors With Underlying Pt/Cr Interdigitated Electrodes
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tai-You Chen; Huey-Ing Chen; Chi-Shiang Hsu; Chien-Chang Huang; Jian-Sheng Wu; Po-Cheng Chou; Wen-Chau Liu
Year: 2012
Suppressing Device Variability by Cryogenic Implant for 28-nm Low-Power SoC Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:C. L. Yang; C. H. Tsai; C. I. Li; C. Y. Tzeng; G. P. Lin; W. J. Chen; Y. L. Chin; C. I. Liao; M. Chan; J. Y. Wu; E. R. Hsieh; B. N. Guo; S. Lu; B. Colombeau; S. S. Chung; I. C. Chen
Year: 2012
$\hbox{ZrLaO}_{x}\hbox{/ZrTiO}_{x}\hbox{/ZrLaO}_{x}$ Laminate as Insulator for MIM Capacitors With High Capacitance Density and Low Quadratic Voltage Coefficient Using Canceling Effect
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lun Lun Chen; Yung-Hsien Wu; Yu-Bo Lin; Chia-Chun Lin; Min-Lin Wu
Year: 2012
Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wei Zhou; Zhiguo Meng; Shuyun Zhao; Meng Zhang; Rongsheng Chen; Man Wong; Hoi-Sing Kwok
Year: 2012
Plasma-Wave Detectors for Terahertz Wireless Communication
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Blin; F. Teppe; L. Tohme; S. Hisatake; K. Arakawa; P. Nouvel; D. Coquillat; A. Penarier; J. Torres; L. Varani; W. Knap; T. Nagatsuma
Year: 2012
A Novel Four-Mask Low-Temperature Polycrystalline Silicon PMOS Thin-Film Transistor With Advanced Terrace Structure for AMOLED Application
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sang-Jin Lee; Sang-Soon Noh; Hee-Sun Shin; Seok-Woo Lee; Seong-Kee Park; Woo-Sup Shin; Myung-Chul Jun
Year: 2012
The Quantum Point-Contact Memristor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:E. Miranda; D. Jimenez; J. Sune
Year: 2012
Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. A. O. Russell; S. Sharabi; A. Tallaire; D. A. J. Moran
Year: 2012
480-GHz $f_{\max}$ in InP/GaAsSb/InP DHBT With New Base Isolation $\mu$-Airbridge Design
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Zaknoune; E. Mairiaux; Y. Roelens; N. Waldhoff; U. Rouchy; P. Frijlink; M. Rocchi; H. Maher
Year: 2012
Reversed Nonlinear Oscillations in Lamé-Mode Single-Crystal-Silicon Microresonators
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Haoshen Zhu; J. E-Y Lee
Year: 2012
Failure Modes in Textile Interconnect Lines
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:H. de Vries; K. H. Cherenack; R. Schuurbiers; K. van Os
Year: 2012
High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. Ghosh; M. S. Parihar; G. A. Armstrong; A. Kranti
Year: 2012
Bidirectional Diode-Triggered Silicon-Controlled Rectifiers for Low-Voltage ESD Protection
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wen Liu; J. J. Liou; Han-Chih Yeh; Huei Wang; You Li; Kiat Seng Yeo
Year: 2012
Multiresistance Characteristics of PCRAM With $ \hbox{Ge}_{1}\hbox{Cu}_{2}\hbox{Te}_{3}$ and $\hbox{Ge}_{2} \hbox{Sb}_{2}\hbox{Te}_{5}$ Films
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Y. Saito; Yun Heub Song; Jung Min Lee; Y. Sutou; J. Koike
Year: 2012
30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xiuju Zhou; Qiang Li; Chak Wah Tang; Kei May Lau
Year: 2012
A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ximeng Guan; Shimeng Yu; H-S P. Wong
Year: 2012
Performance Evaluation of Pinning Potential Adjustment in Two-Dimensional/Three-Dimensional Image Sensor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Seong-Jin Kim
Year: 2012
Characteristics of Ultrashallow Hetero Indium–Gallium–Zinc–Oxide/Germanium Junction
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Juhyeon Shin; Jaewoo Shim; Jongtaek Lee; Seung-Ha Choi; Woo-Shik Jung; Hyun-Yong Yu; Yonghan Roh; Jin-Hong Park
Year: 2012
Low-Frequency Noise Assessment of the Oxide Quality of Gate-Last High- $k$ pMOSFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:E. Simoen; A. Veloso; N. Horiguchi; C. Claeys
Year: 2012
Algorithm-Enhanced Retention Based on Megabit Array of $\hbox{Cu}_{x}\hbox{Si}_{y}\hbox{O}$ RRAM
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yan-Liang Wang; Ya-Li Song; Ling-Ming Yang; Yin-Yin Lin; R. Huang; Qin-Tian Zou; Jin-Gang Wu
Year: 2012
A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:X. A. Tran; W. Zhu; W. J. Liu; Y. C. Yeo; B. Y. Nguyen; Hong Yu Yu
Year: 2012
Solution-Processed Zinc Oxide Thin-Film Transistors With a Low-Temperature Polymer Passivation Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xiaoli Xu; Linrun Feng; Shasha He; Yizheng Jin; Xiaojun Guo
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 8/30/2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE International Electron Devices Meeting
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special Issue on GaN Electronic Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Announcing the IEEE Journal of Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Renuka Jindal
Year: 2012
43rd IEEE Semiconductor Interference Specialist Conference
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
EDS Publication Policy on Manuscript Transfer Among Its Flagship Publications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Samar K. Saha
Year: 2012
New Insight Into PBTI Evaluation Method for nMOSFETs With Stacked High- $k$/IL Gate Dielectric
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sang Kyung Lee; Minseok Jo; Chang-Woo Sohn; Chang Yong Kang; J. C. Lee; Yoon-Ha Jeong; Byoung Hun Lee
Year: 2012
Design of Organic Vertical-Cavity Surface-Emitting Laser for Electrical Pumping
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:V. Qaradaghi; V. Ahmadi; G. Abaeiani
Year: 2012
Investigation of the Epitaxial Graphene/p-SiC Heterojunction
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:T. J. Anderson; K. D. Hobart; L. O. Nyakiti; V. D. Wheeler; R. L. Myers-Ward; J. D. Caldwell; F. J. Bezares; G. G. Jernigan; M. J. Tadjer; E. A. Imhoff; A. D. Koehler; D. K. Gaskill; C. R. Eddy; F. J. Kub
Year: 2012
Graphene Interconnect Lifetime: A Reliability Analysis
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xiangyu Chen; D. H. Seo; Sunae Seo; Hyunjong Chung; H.-S Philip Wong
Year: 2012
Characterization of Geometric Leakage Current of $ \hbox{GeO}_{2}$ Isolation and Effect of Forming Gas Annealing in Germanium p-n Junctions
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Woo-Shik Jung; Jin-Hong Park; J.-Y J. Lin; S. Wong; K. C. Saraswat
Year: 2012
Low-Operating-Voltage Ultrathin Junctionless Poly-Si Thin-Film Transistor Technology for RF Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tzu-I Tsai; Kun-Ming Chen; Horng-Chih Lin; Ting-Yao Lin; Chun-Jung Su; Tien-Sheng Chao; Tiao-Yuan Huang
Year: 2012
Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ming Wang; Hangbing Lv; Qi Liu; Yingtao Li; Zhongguang Xu; Shibing Long; Hongwei Xie; Kangwei Zhang; Xiaoyu Liu; Haitao Sun; Xiaoyi Yang; Ming Liu
Year: 2012
High-Performance Polycrystalline-Silicon Nanowire Thin-Film Transistors With Location-Controlled Grain Boundary via Excimer Laser Crystallization
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chao-Lung Wang; I-Che Lee; Chun-Yu Wu; Chia-Hsin Chou; Po-Yu Yang; Yu-Ting Cheng; Huang-Chung Cheng
Year: 2012
Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Barraud; R. Coquand; M. Casse; M. Koyama; J.-M Hartmann; V. Maffini-Alvaro; C. Comboroure; C. Vizioz; F. Aussenac; O. Faynot; T. Poiroux
Year: 2012
Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:L. De Michielis; L. Lattanzio; A. M. Ionescu
Year: 2012
Oxide Trapping in the InGaAs–$\hbox{Al}_{2} \hbox{O}_{3}$ System and the Role of Sulfur in Reducing the $ \hbox{Al}_{2}\hbox{O}_{3}$ Trap Density
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Alireza Alian; G. Brammertz; R. Degraeve; Moonju Cho; C. Merckling; Dennis Lin; Wei-E Wang; M. Caymax; M. Meuris; K. De Meyer; M. Heyns
Year: 2012
High-Performance Flexible TFT Circuits Using TIPS Pentacene and Polymer Blend on Plastic
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Min Hee Choi; Byung Soon Kim; Jin Jang
Year: 2012
Germanium–Tin $\hbox{n}^{+}\hbox{/p}$ Junction Formed Using Phosphorus Ion Implant and 400 $^{\circ} \hbox{C}$ Rapid Thermal Anneal
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lanxiang Wang; Shaojian Su; Wei Wang; Yue Yang; Yi Tong; Bin Liu; Pengfei Guo; Xiao Gong; Guangze Zhang; Chunlai Xue; Buwen Cheng; Genquan Han; Yee-Chia Yeo
Year: 2012
Electric Field Assembled Anisotropic Dielectric Layer for Metal Core Printed Circuit Boards
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Myong-Jae Yoo; Hyun-Min Cho; Seong-Hwan Kim; Ho-Sun Lim; Seong-Dae Park; Woo-Sung Lee; Jin-Seong Kim; Tae-Geun Seong; Byoung-Jik Jeong; Sahn Nahm
Year: 2012
A $\hbox{TiO}_{2}$ Nanowire MIS Photodetector With Polymer Insulator
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Shoou-Jinn Chang; Tsung-Ying Tsai; Zhi-Yong Jiao; Chiu-Jung Chiu; Wen-Yin Weng; Sin-Hui Wang; Cheng-Liang Hsu; Ting-Jen Hsueh; San-Lien Wu
Year: 2012
A Novel pH Sensor of Extended-Gate Field-Effect Transistors With Laser-Irradiated Carbon-Nanotube Network
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yun-Shan Chien; Wan-Lin Tsai; I-Che Lee; Jung-Chuan Chou; Huang-Chung Cheng
Year: 2012
Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:D. Mohata; B. Rajamohanan; T. Mayer; M. Hudait; J. Fastenau; D. Lubyshev; A. W. K. Liu; S. Datta
Year: 2012
Assessment of NBTI in Presence of Self-Heating in High- $k$ SOI FinFETs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:U. Monga; S. Khandelwal; J. Aghassi; J. Sedlmeir; T. A. Fjeldly
Year: 2012
Fast Terahertz Continuous-Wave Detector Based on Weakly Ionized Plasma
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lei Hou; Wei Shi
Year: 2012
Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:H. Madan; V. Saripalli; Huichu Liu; S. Datta
Year: 2012
NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Malobabic; J. A. Salcedo; Jean-Jacques Hajjar; J. J. Liou
Year: 2012
In-Plane-Gate Transparent $\hbox{SnO}_{2}$ Nanowire Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Huixuan Liu; Qing Wan
Year: 2012
Fully Gravure-Printed Flexible Full Adder Using SWNT-Based TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jinsoo Noh; Kyunghwan Jung; Joonseok Kim; Sungho Kim; Sungho Cho; Gyoujin Cho
Year: 2012
$\hbox{1}/f$ Noise in 45-nm RESET-State Phase-Change Memory Devices: Characterization, Impact on Memory Readout Operation, and Scaling Perspectives
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Giovanni Betti Beneventi; M. Ferro; P. Fantini
Year: 2012
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25- $\mu\hbox{m}$ AlGaN/GaN HEMTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Silvestri; M. J. Uren; M. Kuball
Year: 2012
Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xing Huang; E. Van Brunt; B. J. Baliga; A. Q. Huang
Year: 2012
Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sanghoon Lee; J. J. M. Law; A. D. Carter; B. J. Thibeault; W. Mitchell; V. Chobpattana; S. Kramer; S. Stemmer; A. C. Gossard; M. J. W. Rodwell
Year: 2012
4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 $^{\circ}\hbox{C}$
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wei-Cheng Lien; Dung-Sheng Tsai; Der-Hsien Lien; D. G. Senesky; Hau He; A. P. Pisano
Year: 2012
Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:J.-Y J. Lin; A. M. Roy; K. C. Saraswat
Year: 2012
Investigation of Low-Frequency Noise Behavior After Hot-Carrier Stress in an n-Channel Junctionless Nanowire MOSFET
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chan-Hoon Park; Myung-Dong Ko; Ki-Hyun Kim; Sang-Hyun Lee; Jun-Sik Yoon; Jeong-Soo Lee; Yoon-Ha Jeong
Year: 2012
Effect of $\hbox{B}_{2}\hbox{H}_{6}$ Plasma Doping on the Shallow Trench Isolation in CMOS Image Sensor Device
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Sung Gyu Pyo; Ji Hwan Park; Taek-Seung Yang
Year: 2012
Thin-Wafer Silicon IGBT With Advanced Laser Annealing and Sintering Process
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Rahimo; C. Corvasce; J. Vobecky; Y. Otani; K. Huet
Year: 2012
A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:E. A. G. Webster; L. A. Grant; R. K. Henderson
Year: 2012
21-kV SiC BJTs With Space-Modulated Junction Termination Extension
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:H. Miyake; T. Okuda; H. Niwa; T. Kimoto; J. Suda
Year: 2012
Characteristics of Elliptical Gate-All-Around SONOS Nanowire With Effective Circular Radius
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Myoung-Sun Lee; Byung-Gook Park; Il Hwan Cho; Jong-Ho Lee
Year: 2012
Phototransistors and Photoswitches From an Ultraclosely $\pi$-Stacked Organic Semiconductor
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zhuoyu Ji; Liwei Shang; Congyan Lu; Long Wang; Jingwei Guo; Hong Wang; Dongmei Li; Ming Liu
Year: 2012
Announcing the IEEE Journal of Electron Devices Society
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Renuka Jindal
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 9/17/2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE International Electron Devices Meeting
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special Issue on GaN Electronic Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
43rd IEEE Semiconductor Interference Specialist Conference
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Open Access [advertisement]
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2013 IEEE International Reliability Physics Symposium (IRPS)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 IEEE membership application
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Numerical Model of Gate-All-Around MOSFET With Vacuum Gate Dielectric for Biomolecule Detection
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:R. Gautam; M. Saxena; R. S. Gupta; M. Gupta
Year: 2012
Piezoresistive Sensing Performance of Junctionless Nanowire FET
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:P. Singh; Jianmin Miao; V. Pott; Woo-Tae Park; Dim-Lee Kwong
Year: 2012
Direct-Grown Air-Void Structure in the InGaN Light-Emitting Diodes
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chung-Chieh Yang; Chia-Feng Lin; Kuei-Ting Chen; Ren-Hao Jiang; Chun-Min Lin
Year: 2012
Experimental Analysis of Lag Sources in Pinned Photodiodes
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:L. Bonjour; N. Blanc; M. Kayal
Year: 2012
Fabrication and Energy Band Alignment of n-ZnO/p-CuI Heterojunction
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:K. Ding; Q. C. Hu; D. G. Chen; Q. H. Zheng; X. G. Xue; F. Huang
Year: 2012
Current Enhancement Phenomenon Caused by the Reversible Charge Trapping Effect Under Photoirradiation on Pentacene Field-Effect Transistors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chang Bum Park
Year: 2012
Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:A. Kamath; T. Patil; R. Adari; I. Bhattacharya; S. Ganguly; R. W. Aldhaheri; M. A. Hussain; D. Saha
Year: 2012
Ultrafine Pitch (6 $\mu\hbox{m}$) of Recessed and Bonded Cu–Cu Interconnects by Three-Dimensional Wafer Stacking
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Lan Peng; Lin Zhang; Ji Fan; Hong Yu Li; Dau Fatt Lim; Chuan Seng Tan
Year: 2012
Low-Voltage Junctionless Oxide-Based Thin-Film Transistors Self-Assembled by a Gradient Shadow Mask
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Guodong Wu; Jumei Zhou; Hongliang Zhang; Liqiang Zhu; Qing Wan
Year: 2012
Silicon Solar Cell With Integrated Tunnel Junction for Multijunction Photovoltaic Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jingfeng Yang; J. Goguen; R. Kleiman
Year: 2012
Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:B. Benbakhti; J. F. Zhang; Z. Ji; W. Zhang; J. Mitard; B. Kaczer; G. Groeseneken; S. Hall; J. Robertson; P. Chalker
Year: 2012
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tsung-Ming Tsai; Kuan-Chang Chang; Ting-Chang Chang; Yong-En Syu; Siang-Lan Chuang; Geng-Wei Chang; Guan-Ru Liu; Min-Chen Chen; Hui-Chun Huang; Shih-Kun Liu; Ya-Hsiang Tai; Der-Shin Gan; Ya-Liang Yang; Tai-Fa Young; Bae-Heng Tseng; Kai-Huang Chen; Ming-Jinn Tsai; Cong Ye; Hao Wang; S. M. Sze
Year: 2012
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Tsung-Ming Tsai; Hui-Chun Huang; Ya-Hsiang Tai; Der-Shin Gan; Cong Ye; Hao Wang; Simon M. Sze; Kuan-Chang Chang; Ting-Chang Chang; Geng-Wei Chang; Yong-En Syu; Yu-Ting Su; Guan-Ru Liu; Kuo-Hsiao Liao; Min-Chen Chen
Year: 2012
Tristate Operation in Resistive Switching of $ \hbox{SiO}_{2}$ Thin Films
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yen-Ting Chen; B. Fowler; Yanzhen Wang; Fei Xue; Fei Zhou; Yao-Feng Chang; Pai-Yu Chen; J. C. Lee
Year: 2012
Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Huaping Jiang; Jin Wei; Bo Zhang; Wanjun Chen; Ming Qiao; Zhaoji Li
Year: 2012
Reliability of $\hbox{SrRuO}_{3}\hbox{/SrTiO}_{3}\hbox{/SrRuO}_{3}$ Stacks for DRAM Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Kupke; S. Knebel; U. Schroeder; S. Schmelzer; U. Bottger; T. Mikolajick
Year: 2012
Cycling-Induced Peak-Like Interface State Generation in Si-Nanocrystal Memory Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Dandan Jiang; Manhong Zhang; Zongliang Huo; Zhong Sun; Yong Wang; Bo Zhang; Junning Chen; Ming Liu
Year: 2012
Thin-Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:F. B. Oruc; F. Cimen; A. Rizk; M. Ghaffari; A. Nayfeh; A. K. Okyay
Year: 2012
Dual Read Method by Capacitance Coupling Effect for Mode-Disturbance-Free Operation in Channel-Recessed Multifunctional Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jin-Kwon Park; Won-Ju Cho
Year: 2012
Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ Films
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Li Qiang Zhu; Xiang Li; Zhong Hui Yan; Hong Liang Zhang; Qing Wan
Year: 2012
Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Liqiang Zhu; Guodong Wu; Jumei Zhou; Hongliang Zhang; Qing Wan
Year: 2012
Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jieun Lee; Jin-Moo Lee; Jung Han Lee; Won Hee Lee; Mihee Uhm; Byung-Gook Park; Dong Myong Kim; Yong-Joo Jeong; Dae Hwan Kim
Year: 2012
Body-Tied Germanium FinFETs Directly on a Silicon Substrate
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Che-Wei Chen; Cheng-Ting Chung; Guang-Li Luo; Chao-Hsin Chien
Year: 2012
Boosted Gain of the Differential Amplifier Using the Second Gate of the Dual-Gate a-IGZO TFTs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Y.-H Tai; H.-L Chiu; L.-S Chou; C.-H Chang
Year: 2012
Self-Heating Characterization of SiGe:C HBTs by Extracting Thermal Impedances
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:I. Hasnaoui; A. Pottrain; D. Gloria; P. Chevalier; V. Avramovic; C. Gaquiere
Year: 2012
Investigation of Reverse Leakage Characteristics of InGaN/GaN Light-Emitting Diodes on Silicon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jaekyun Kim; Jun-Youn Kim; Youngjo Tak; Joosung Kim; Hyun-Gi Hong; Moonseung Yang; Suhee Chae; Junghoon Park; Youngsoo Park; U-In Chung
Year: 2012
Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Zhiqiang Li; Xia An; Min Li; Quanxin Yun; Meng Lin; Ming Li; Xing Zhang; Ru Huang
Year: 2012
Experimental Demonstration of Capacitorless A2RAM Cells on Silicon-on-Insulator
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:N. Rodriguez; C. Navarro; F. Gamiz; F. Andrieu; O. Faynot; S. Cristoloveanu
Year: 2012
A Superjunction Schottky Barrier Diode With Trench Metal–Oxide–Semiconductor Structure
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Ying Wang; Likun Xu; Zhikun Miao
Year: 2012
Cu-Embedded AlN-Based Nonpolar Nonvolatile Resistive Switching Memory
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chao Chen; Shuang Gao; Guangsheng Tang; Cheng Song; Fei Zeng; Feng Pan
Year: 2012
Full-Swing a-IGZO Inverter With a Depletion Load Using Negative Bias Instability Under Light Illumination
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:In-Tak Cho; Ju-Wan Lee; Jun-Mo Park; Woo-Seok Cheong; Chi-Sun Hwang; Joon-Seop Kwak; Il-Hwan Cho; Hyuck-In Kwon; Hyungcheol Shin; Byung-Gook Park; Jong-Ho Lee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Correction to "Photomask Effect in Organic Solar Cells With ZnO Cathode Buffer Layer" [Oct 12 1480-1482]
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hyeong Pil Kim; Mi Sun Ryu; Jun Ho Youn; Abd Rashid bin Mohd Yusoff; Jin Jang
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Changes to the Editorial Board
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
Miracle Workers—A Round of Much Deserved Applause for the T-ED and EDL Staff
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:John D. Cressler; Amitava Chatterjee
Year: 2012
Golden List of Reviewers for 2012
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Kudos to Our Reviewers
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Amitava Chatterjee
Year: 2012
IEEE Electron Devices Society Meetings Calendar for 2012 (As of 9/17/2012)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Electron Device Letters information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Special Issue on GaN Electronic Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Journal of Electron Devices Society (J-EDS)
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
2012 Index IEEE Electron Device Letters Vol. 33
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Design Optimization and Implementation for RF Energy Harvesting Circuits
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:P. Nintanavongsa; U. Muncuk; D. R. Lewis; K. R. Chowdhury
Year: 2012
TAD-MAC: Traffic-Aware Dynamic MAC Protocol for Wireless Body Area Sensor Networks
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. M. Alam; O. Berder; D. Menard; O. Sentieys
Year: 2012
Probabilistically Programmed STT-MRAM
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Wenqing Wu; Xiaochun Zhu; Seung Kang; K. Yuen; R. Gilmore
Year: 2012
VLSI Friendly ECG QRS Complex Detector for Body Sensor Networks
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:C. F. Zhang; Tae-Wuk Bae
Year: 2012
Low-Invasive Implantable Devices of Low-Power Consumption Using High-Efficiency Antennas for Cloud Health Care
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Chin-Lung Yang; Chi-Lin Tsai; Kuo-Tsun Cheng; Sheng-Hao Chen
Year: 2012
Guest Editorial Emerging Circuits and Systems Techniques for Ultra-Low Power Body Sensor Networks
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Benton Calhoun; Anantha P. Chandrakasan; Brian Otis; Naveen Verma; Hoi-Jun Yoo
Year: 2012
An Ultra-Low Power ECG Acquisition and Monitoring ASIC System for WBAN Applications
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Xin Liu; Yuanjin Zheng; M. W. Phyu; F. N. Endru; V. Navaneethan; Bin Zhao
Year: 2012
Ultra Low Power CMOS-Based Sensor for On-Body Radiation Dose Measurements
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. Arsalan; A. Shamim; M. Shams; N. G. Tarr; L. Roy
Year: 2012
Robust Quantized Approach to Fuzzy Networked Control Systems
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:M. S. Mahmoud; Abdul-Wahid A. Saif
Year: 2012
Novel Modulation Techniques and Circuits for Transceivers in Body Sensor Networks
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Y. S. Poberezhskiy
Year: 2012
IEEE Journal on Emerging and Selected Topics in Circuits and Systems publication information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Journal on Emerging and Selected Topics in Circuits and Systems information for authors
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
IEEE Circuits and Systems Society Information
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Year: 2012
Design Quality Trade-Off Studies for 3-D ICs Built With Sub-Micron TSVs and Future Devices
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Dae Hyun Kim; Sung Kyu Lim
Year: 2012
Design and Testing Strategies for Modular 3-D-Multiprocessor Systems Using Die-Level Through Silicon Via Technology
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:G. Beanato; P. Giovannini; A. Cevrero; P. Athanasopoulos; M. Zervas; Y. Temiz; Y. Leblebici
Year: 2012
Wireless NoC as Interconnection Backbone for Multicore Chips: Promises and Challenges
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:S. Deb; A. Ganguly; P. P. Pande; B. Belzer; Deukhyoun Heo
Year: 2012
Energy-Effective Sub-Threshold Interconnect Design Using High-Boosting Predrivers
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Yingchieh Ho; Hung-Kai Chen; Chauchin Su
Year: 2012
A High-Frequency Compensated Crosstalk and ISI Equalizer for Multi-Channel On-Chip Interconnect in 130-nm CMOS
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Jaewon Lee; Woojae Lee; SeongHwan Cho
Year: 2012
A Practical Low-Power Nonregular Interconnect Design With Manufacturing for Design Approach
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Authors:Hongbo Zhang; M. D. F. Wong; Kai-Yuan Chao; Liang Deng
Year: 2012


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