IEEE - Institute of Electrical and Electronics Engineers, Inc. - A 350V complementary LSI process using shallow junctions

Author(s): Sakurai, T. ; Kato, K. ; Inabe, Y. ; Hayashi, T.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 793 - 795
DOI: 10.1109/IEDM.1982.190416
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