IEEE - Institute of Electrical and Electronics Engineers, Inc. - Nonuniform displacement of MOSFET channel pinchoff

Author(s): Chamberlain, S.G. ; Husain, A. ; Gaensslen, F.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 745 - 748
DOI: 10.1109/IEDM.1982.190402
Regular:

The effects of fixed, positive oxide charge under the gate on the characteristics of MOSFET devices are well known. But the combined effects of the oxide charge in the field and of the edge... View More

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