IEEE - Institute of Electrical and Electronics Engineers, Inc. - An advanced MNOS memory device for highly-integrated byte-erasable 5V-only EEPROMs

Author(s): Yatsuda, Y. ; Minami, S. ; Hagiwara, T. ; Toyabe, T. ; Asai, S. ; Uchida, K.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 733 - 736
DOI: 10.1109/IEDM.1982.190399
Regular:

An advanced MNOS memory device promising the next-stage, high-density, byte-erasable, 5V-only EEPROM is described. The advanced device features: (1) dimensions that, except for an ultrathin oxide... View More

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