IEEE - Institute of Electrical and Electronics Engineers, Inc. - Titanium disilicide self-aligned source/drain + gate technology

Author(s): Lau, C.K. ; See, Y.C. ; Scott, D.B. ; Bridges, J.M. ; Perna, S.M. ; Davies, R.D.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 714 - 717
DOI: 10.1109/IEDM.1982.190394
Regular:

Silicides have been used to lower the resistance of gate level interconnects. Recently silicidation of source/drain diffusions have also been reported. In scaled CMOS devices, silicidation of... View More

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