IEEE - Institute of Electrical and Electronics Engineers, Inc. - Advanced concepts in VLSI Schottky-barrier diode modeling

Author(s): Wagner, L.F.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 676 - 679
DOI: 10.1109/IEDM.1982.190384
Regular:

A VLSI Schottky-barrier diode is first studied in one and two dimensions using a numerical device analysis program in which thermionic-emission boundary conditions have been implemented for both... View More

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