IEEE - Institute of Electrical and Electronics Engineers, Inc. - A complete large and small signal charge model for an M.O.S. transistor

Author(s): Conilogue, R. ; Viswanathan, C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 654 - 657
DOI: 10.1109/IEDM.1982.190378
Regular:

A complete large and small-signal, quasi-static, charge model for the MOS enhancement transistor is developed. An approximate method based upon a perturbation technique is used to solve for the... View More

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