IEEE - Institute of Electrical and Electronics Engineers, Inc. - Physics and simulation of small MOS devices

Author(s): Fichtner, W.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 638 - 641
DOI: 10.1109/IEDM.1982.190374
Regular:

The most effective way to design optimum devices with submicrometer geometries is the use of sophisticated and very complex two-and three-dimensional numerical models. This paper presents an... View More

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