IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hi-C isolation of DRAM storage capacitors

Author(s): Erb, D.M. ; McCombs, A. ; Radwin, M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 612 - 615
DOI: 10.1109/IEDM.1982.190367
Regular:

A new method of isolating adjacent DRAM capacitors is presented and characterized. This method increases the capacitor area available for charge storage by 39% over conventional semi-recessed... View More

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