IEEE - Institute of Electrical and Electronics Engineers, Inc. - Mo 2 N/Mo gate MOSFETs

Author(s): Kim, M.J. ; Brown, D.M.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 560 - 563
DOI: 10.1109/IEDM.1982.190353
Regular:

Molybdenum nitride coatings on molybdenum using a direct reaction of molybdenum with ammonia is used to improve the gate electrode properties of Mo gate self-aligned MOSFETs. The Mo2N double layer... View More

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