IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characteristics of MOSFET's fabricated on laser-recrystallized Silicon islands on amorphous substrates using selective absorption and beam shaping techniques

Author(s): Possin, G.E. ; Parks, H.G. ; Chiang, S.W. ; Liu, Y.S.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 424 - 428
DOI: 10.1109/IEDM.1982.190315
Regular:

The characteristics of MOSFET's fabricated in laser-recrystallized silicon islands on amorphous substrates using a standard n-channel poly-gate process were studied. Selective absorption... View More

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