IEEE - Institute of Electrical and Electronics Engineers, Inc. - 0.2 Micron length mushroom gate fabrication using a new single-level photoresist technique

Author(s): Chao, P.C. ; Ku, W.H. ; Smith, P.M. ; Perkins, W.H.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 415 - 418
DOI: 10.1109/IEDM.1982.190312
Regular:

A new technique has been developed to generate sub-half-micron mushroom gates in GaAs MESFET's. The technique uses a single-level resist and a two-step evaporation process. By using this... View More

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