IEEE - Institute of Electrical and Electronics Engineers, Inc. - Statistical modelling of small geometry MOSFETs

Author(s): Ping Yang ; Chatterjee, P.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1982
Conference Location: San Francisco, CA, USA, USA
Conference Date: 13 December 1982
Page(s): 286 - 289
DOI: 10.1109/IEDM.1982.190275
Regular:

An accurate and simple statistical model is derived to represent the interdie process variations. This model can be used either for performance range analysis or for yield/performance... View More

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